Semiconductor device manufacturing method
A manufacturing method for semiconductor devices having MOSFET gate insulation films. The method includes forming a silicon oxide film, forming a silicon nitride film, nitriding the silicon nitride film, and heat treatment.
1 . A manufacturing method for a semiconductor device, comprising:
forming a silicon oxide film on a semiconductor substrate;
forming a silicon nitride film on the silicon oxide film;
nitriding the silicon nitride film; and
heat treatment following nitriding of the silicon nitride film.
2 . The manufacturing method for semiconductor devices according to claim 1 , wherein forming of the silicon nitride film is performed with an ALD (Atomic Layer Deposition) method.
3 . The manufacturing method for semiconductor devices according to claim 1 , wherein the nitriding is radical nitriding with nitrogen plasma.
4 . The manufacturing method for semiconductor devices according to claim 1 , wherein the heat treatment includes annealing.
5 . The manufacturing method for semiconductor devices according to claim 4 , wherein the annealing is conducted in an inert gas atmosphere.
6 . The manufacturing method for semiconductor devices according to claim 1 , wherein the silicon oxide film is formed by a thermal oxidation method or plasma oxidation method.
7 . The manufacturing method for semiconductor devices according to claim 1 , wherein the silicon nitride film is formed by a low pressure chemical vapor deposition method.
8 . The manufacturing method for semiconductor devices according to claim 1 , wherein the silicon oxide film is formed to a thickness between 0.5 nm and 1.5 nm and the silicon nitride film is formed to a thickness between 0.2 nm and 1 nm.
9 . The manufacturing method for semiconductor devices according to claim 5 , wherein the annealing is conducted at a temperature between 900 and 1100° C. for 1 to 100 seconds.
10 . A manufacturing method for a semiconductor device, comprising:
forming a silicon oxide film on a semiconductor substrate;
forming a silicon nitride film on the silicon oxide film;
first heat treatment following formation of the silicon nitride film;
nitriding the silicon nitride film following said first heat treatment; and
second heat treatment following the nitriding of the silicon nitride film.
11 . The manufacturing method for semiconductor devices according to claim 10 , wherein forming of the silicon nitride film is performed with an ALD (Atomic Layer Deposition) method.
12 . The manufacturing method for semiconductor devices according to claim 10 , wherein the nitriding is radical nitriding with nitrogen plasma.
13 . The manufacturing method for semiconductor devices according to claim 10 , wherein the first heat treatment includes annealing and the second heat treatment also includes annealing.
14 . The manufacturing method for semiconductor devices according to claim 13 , wherein the annealing is conducted in an inert gas atmosphere.
15 . The manufacturing method for semiconductor devices according to claim 10 , wherein the silicon oxide film is formed by a thermal oxidation method or plasma oxidation method.
16 . The manufacturing method for semiconductor devices according to claim 10 , wherein the silicon nitride film is formed by a low pressure chemical vapor deposition method.
17 . The manufacturing method for semiconductor devices according to claim 10 , wherein the silicon oxide film is formed to a thickness between 0.5 nm and 1.5 nm and the silicon nitride film is formed to a thickness between 0.2 nm and 1 nm.
18 . The manufacturing method for semiconductor devices according to claim 14 , wherein each of the first and second annealing is conducted at a temperature between 900 and 1100° C. for 1 to 100 seconds.