Solid-state imaging devices

1. A solid-state imaging device, comprising:

a substrate;

a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light;

a floating diffusion that retains the light-generated charge generated from the photoelectric transducer;

a transfer and retention unit that is provided between the photoelectric transducer and the floating diffusion for a purpose of controlling a transfer of the light-generated charge and has a charge-retaining region that can retain the light-generated charge generated from the photoelectric transducer;

a reset unit that initializes a potential of the floating diffusion;

an amplifying transistor that generates an output based on a potential of the floating diffusion;

a selection transistor that selectively outputs an output of the amplifying transistor; and

an excessive charge-discharging path that lets excessive electric charge generated from the photoelectric transducer flow into the floating diffusion;

wherein the photoelectric transducer includes:

a second impurity region;

wherein the floating diffusion includes:

a fourth impurity region;

wherein the excessive charge-discharging path includes:

a fifth impurity region, which is formed on a surface of the substrate, contacting with the second impurity region and the fourth impurity region.

2. A solid-state imaging device, comprising:

a substrate; and

a sensor cell array including matrixed sensor cells, each of which has a photoelectric transducer, a floating diffusion, a transfer and retention unit, a reset unit, a amplifying transistor, a selection transistor, and an excessive charge-discharging path that are provided on the substrate,

wherein the excessive charge-discharging path lets excessive electric charge that is generated from the photoelectric transducer flow into the floating diffusion in a same sensor cell;

wherein the photoelectric transducer includes:

a second impurity region;

wherein the floating diffusion includes:

a fourth impurity region;

wherein the excessive charge-discharging path includes:

a fifth impurity region, which is formed on a surface of the substrate, contacting with the second impurity region and the fourth impurity region.