Light-emitting diode and manufacturing method thereof
View Patent ↗A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adhering the composite substrate to the epitaxial structure. The composite substrate comprises a patterned silicon layer penetrated through by a plurality of openssilicon, and a metal layer covering the patterned silicon layer, wherein a portion of the metal layer is filled into the opens and contacts the bonding layer.
1. A method of forming an LED comprising:
providing a first substrate;
forming an epitaxial structure on the first substrate;
providing and patterning a second substrate, to form at least one opening on a first surface of the second substrate;
forming a bonding layer on the surface of the epitaxial structure away from the first substrate;
adhering the first surface of the second substrate to the bonding layer;
removing at least one portion of the second substrate beneath the opening so as to form at least one through-hole penetrating through the opening and exposing a portion of the bonding layer through the through-holes;
forming a metal layer over the remaining portion of the second substrate, wherein a portion of the metal layer is filled into the through-holes and contacts the bonding layer; and
removing the first substrate.
2. The method of claim 1 , wherein the epitaxial structure is selected from a group consisting of a homo-structure, a single hetero-structure, a double hetero-structure, a multiple quantum well and any arbitrary combination thereof.
3. The method of claim 1 , wherein the forming of the epitaxial structure further comprises forming a contact layer and an anti-reflection layer on the side of the epitaxial structure away from the first substrate.
4. The method of claim 1 , wherein the second substrate is patterned by an etch process conducted on the first surface of the second substrate.
5. The method of claim 1 , wherein the second substrate is made of silicon.
6. The method of claim 1 , wherein the adhering process comprises:
forming a bonding layer on the side of the epitaxial structure away from the first substrate; and
adhering the first surface of the second substrate to the epitaxial structure with the bonding layer.
7. The method of claim 6 , wherein the bonding layer is selected from B-staged bisbenzocyclobutene (BCB) resin, AuBe/Au alloy and the combination thereof.
8. The method of claim 1 , wherein the method for removing a portion of the second substrate is selected from a group consisting of an etch process, a chemical mechanical polishing process and the combination thereof.
9. The method of claim 1 , wherein the method for forming the metal layer is selected from a group consisting of a sputtering process, anodic oxidation process and the combination thereof.
10. The method of claim 1 , further comprising forming a first electrode and a second electrode contacting the epitaxial structure.
11. The method of claim 10 , wherein the first electrode and the second electrode are located on the same side of the second substrate.
12. The method of claim 10 , wherein the first electrode and the second electrode are respectively located on different sides of the second substrate.
13. A method of forming an LED comprising:
providing a first substrate;
forming an epitaxial structure on the first substrate;
providing a second substrate with a first surface and a second surface;
forming a bonding layer on the surface of the epitaxial structure away from the first substrate;
adhering the entire first surface of the second substrate to the bonding layer;
removing at least one portion of the second substrate to form at least one penetrating opening and exposing a portion of the bonding layer through the penetrating opening;
forming a metal layer over the remaining portion of the second substrate, wherein a portion of the metal layer is filled into the penetrating opening and contacts the bonding layer; and
removing the first substrate.
14. The method of claim 13 , wherein the epitaxial structure is selected from a group consisting of a homo-structure, a single hetero-structure, a double hetero-structure, a multiple quantum well and any arbitrary combination thereof.
15. The method of claim 13 , wherein the forming of the epitaxial structure further comprises forming a contact layer and an anti-reflection layer on the side of the epitaxial structure away from the first substrate.
16. The method of claim 13 , wherein the portion of the second substrate is removed by an etch process conducted on the first surface of the second substrate.
17. The method of claim 13 , wherein the second substrate is made of silicon.
18. The method of claim 13 , wherein the adhering process comprises:
forming a bonding layer on the side of the epitaxial structure away from the first substrate; and
adhering the first surface of the second substrate to the epitaxial structure with the bonding layer.
19. The method of claim 18 , wherein the bonding layer is selected from B-staged bisbenzocyclobutene (BCB) resin, AuBe/Au alloy and the combination thereof.
20. The method of claim 13 , wherein the method for removing a portion of the second substrate is selected from a group consisting of an etch process, a chemical mechanical polishing process and the combination thereof.
21. The method of claim 13 , wherein the method for forming the metal layer is selected from a group consisting of a sputtering process, an anodic oxidation process and the combination thereof.
22. The method of claim 13 , further comprising forming a first electrode and a second electrode contacting the epitaxial structure.
23. The method of claim 22 , wherein the first electrode and the second electrode are located on the same side of the second substrate.
24. The method of claim 22 , wherein the first electrode and the second electrode are respectively located on different sides of the second substrate.