Apparatus for treating thin film and method of treating thin film

1. An apparatus for treating a substrate, comprising:

a stage adapted to receive the substrate;

a gas shield facing said substrate, said gas shield having a retention space and having top, middle and bottom plates with first, second, and third unconnected gas paths disposed therein, said gas paths each having an introduction port through which gas is introduced and an exit port from which the gas exits, wherein said retention space is surrounded by inner surfaces of said top, middle and bottom plates, wherein said first gas path is located on a top surface of said middle plate, wherein said top surface of said middle plate is parallel to said stage, and the exit port of said first gas path directly meets a middle space of said retention space, wherein said middle space is surrounded by said inner surface of said middle plate;

an energy source facing said top plate such that light emitted therefrom irradiates a part of said Substrate through said retention space;

a reaction gas supplier connected to said first gas path to supply reaction gas to said middle space; and

first and second pumps connected to said second and third gas paths, respectively, wherein said first pump is capable of inhaling gas from and exhaling gas to said second gas path and said second pump is capable of inhaling gas from and exhaling gas to said third gas path,

wherein further comprising an inert gas supplier and an inert gas path in said gas shield, said inert gas supplier connected to said inert gas path,

wherein said reaction gas supplier and said inert gas supplier are introduced to the gas plates through different introduction ports in said top plate and connected to said retention space through different grooves in said top surface of said middle plate, and wherein said different grooves in the top surface of said middle plate directly meet the middle space of said retention space to directly supply the reaction gas from the reaction gas supplier and said inert as from said inert gas supplier to said middle space of said retention space,

wherein the gas shield further includes a heating plate surrounding said retention space and sandwiched between at least one of said top plate and said middle plate or between said middle plate and said bottom plate.

2. The apparatus according to claim 1 , wherein the introduction ports of the first, second and third gas paths are disposed on a top of the gas shield.

3. The apparatus according to claim 1 , wherein each of the top, middle and bottom plates contains at least one of: grooves or holes associated with the grooves.

4. The apparatus according to claim 3 , wherein the middle plate comprises grooves on opposing surfaces that are different.

5. The apparatus according to claim 4 , wherein at least one groove on each surface of the middle plate surrounds at least part of another groove on the same surface.

6. The apparatus according to claim 3 , wherein the bottom plate comprises a plurality of pump holes formed in substantially concentric rings surrounding the retention space.

7. The apparatus according to claim 6 , wherein first pump holes of the plurality of pump holes in one of the concentric rings are unconnected with second pump holes of the plurality of pump holes in another of the concentric rings.

8. The apparatus according to claim 3 , wherein a thickness of the top and bottom plate only have a thickness to cover the middle plate, and a thickness of the middle plate is substantially sufficient to form grooves for the gas paths in the middle plate.

9. The apparatus according to claim 1 , wherein the first pump supplies either a negative pressure or an inert gas to the gas paths, and the second pump supplies either a negative pressure or an inert gas to the gas paths.

10. The apparatus according to claim 1 , wherein a gas flow rate of the first pump and a gas flow rate of the second pump are substantially opposite one another so as to minimize waste of the reaction gas.