COG dielectric composition for use with copper electrodes
View Patent ↗Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as copper and copper alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a composite oxide formed by calcining rare earth titanates, barium titanate, together with other metal oxides such as MgO, CaO, ZnO, MnO 2 , ZrO 2 , SiO 2 , Ga 2 O 3 , Nd 2 O 3 , Nb 2 O 5 , and Y 2 O 3 .
1. A method of forming an electronic component comprising:
a. applying particles of a dielectric material to a substrate and
b. firing the substrate at a temperature sufficient to sinter the dielectric material, wherein the dielectric material comprises, prior to firing, about 12 to about 15 wt % Gd 2 O 3 , about 18 to about 22.5 wt % Nd 2 O 3 , about 26 to about 40 wt % TiO 2 , about 12 to about 16 wt % BaO, about 0.05 to about 3 wt % CaO, about 0.05 to about 1.5 wt % SrO, about 0.05 to about 1.5 wt % SiO 2 , about 0.05 to about 1 wt % Li 2 O, about 2.5 to about 4.5 wt % Sm 2 O 3 , about 0.1 to about 5 wt % ZnO, about 0.05 to about 3 wt % B 2 O 3 , and about 0.05 to about 1.5 wt % LiF.
2. The method of claim 1 wherein the firing temperature is about 900° C. to about 1050° C.
3. The method of claim 1 wherein the firing is conducted in an atmosphere having an oxygen partial pressure of about 10 −12 atm to about 10 −8 atm.
4. The method of claim 1 wherein the dielectric material comprises, prior to firing, about 12.5 to about 14.5 wt % Gd 2 O 3 , about 19 to about 22 wt % Nd 2 O 3 , about 30 to about 39 wt % TiO 2 , about 13 to about 15 wt % BaO, about 0.1 to about 2.5 wt % CaO, about 0.1 to about 1 wt % SrO, about 0.1 to about 1 wt % SiO 2 , about 0.1 to about 0.8 wt % Li 2 O, about 3 to about 4 wt % Sm 2 O 3 , about 0.2 to about 4.5 wt % ZnO, about 0.1 to about 2.5 wt % B 2 O 3 , and about 0.1 to about 1 wt % LiF.
5. The method of claim 1 wherein the dielectric material comprises, prior to firing, about 13 to about 14 wt % Gd 2 O 3 , about 20 to about 21 wt % Nd 2 O 3 , about 32 to about 38 wt % TiO 2 , about 14 to about 15 wt % BaO, about 1 to about 2.5 wt % CaO, about 0.5 to about 1 wt % SrO, about 0.5 to about 1 wt % SiO 2 , about 0.2 to about 0.5 wt % Li 2 O, about 3.2 to about 3.8 wt % Sm 2 O 3 , about 1 to about 4 wt % ZnO, about 0.5 to about 2 wt % B 2 O 3 , and about 0.3 to about 0.9 wt % LiF.
6. A method of forming an electronic component comprising:
a. alternately printing layers of an oxide-containing dielectric material and layers of a metal-containing electrode paste onto a substrate to form a laminar stack, wherein the dielectric material comprises, prior to firing, about 12 to about 15 wt % Gd 2 O 3 , about 18 to about 22.5 wt % Nd 2 O 3 , about 26 to about 40 wt % TiO 2 , about 12 to about 16 wt % BaO, about 0.05 to about 3 wt % CaO, about 0.05 to about 1.5 wt % SrO, about 0.05 to about 1.5 wt % SiO 2 , about 0.05 to about 1 wt % Li 2 O, about 2.5 to about 4.5 wt % Sm 2 O 3 , about 0.1 to about 5 wt % ZnO, about 0.05 to about 3 wt % B 2 O 3 , and about 0.05 to about 1.5 wt % LiF,
b. cutting the laminar stack to a predetermined shape,
c. separating the stack from the substrate, and
d. firing the stack to densify the metal in the electrode and sinter the oxides in the dielectric material.
7. The method of claim 6 wherein the layers of dielectric material, after firing, have a thickness of about 0.5 to about 50 microns.
8. The method of claim 6 wherein the firing is temperature is about 950° C. to about 1050° C.
9. The method of claim 6 wherein the metal-containing electrode paste comprises copper.
10. The method of claim 6 wherein the dielectric material comprises, prior to firing, about 12.5 to about 14.5 wt % Gd 2 O 3 , about 19 to about 22 wt % Nd 2 O 3 , about 30 to about 39 wt % TiO 2 , about 13 to about 15 wt % BaO, about 0.1 to about 2.5 wt % CaO, about 0.1 to about 1 wt % SrO, about 0.1 to about 1 wt % SiO 2 , about 0.1 to about 0.8 wt % Li 2 O, about 3 to about 4 wt % Sm 2 O 3 , about 0.2 to about 4.5 wt % ZnO, about 0.1 to about 2.5 wt % B 2 O 3 , and about 0.1 to about 1 wt % LiF.
11. A multilayer ceramic chip capacitor comprising
a. layers of a dielectric material alternately stacked with
b. layers of an electrode material comprising a transition metal other than Ag, Au, Pd, or Pt, wherein the dielectric material comprises, prior to firing, about 12 to about 15 wt % Gd 2 O 3 , about 18 to about 22.5 wt % Nd 2 O 3 , about 26 to about 40 wt % TiO 2 , about 12 to about 16 wt % BaO, about 0.05 to about 3 wt % CaO, about 0.05 to about 1.5 wt % SrO, about 0.05 to about 1.5 wt % SiO 2 , about 0.05 to about 1 wt % Li 2 O, about 2.5 to about 4.5 wt % Sm 2 O 3 , about 0.1 to about 5 wt % ZnO, about 0.05 to about 3 wt % B 2 O 3 , and about 0.05 to about 1.5 wt % LiF.
12. The multilayer ceramic chip capacitor of claim 11 wherein the electrode material comprises copper.
13. The multilayer ceramic chip capacitor of claim 11 wherein the dielectric material comprises, prior to firing, about 13 to about 14 wt % Gd 2 O 3 , about 20 to about 21 wt % Nd 2 O 3 , about 32 to about 38 wt % TiO 2 , about 14 to about 15 wt % BaO, about 1 to about 2.5 wt % CaO, about 0.5 to about 1 wt % SrO, about 0.5 to about 1 wt % SiO 2 , about 0.2 to about 0.5 wt % Li 2 O, about 3.2 to about 3.8 wt % Sm 2 O 3 , about 1 to about 4 wt % ZnO, about 0.5 to about 2 wt % B 2 O 3 , and about 0.3 to about 0.9 wt % LiF.
14. The multilayer ceramic chip capacitor of claim 13 where the electrode material comprises copper.
15. A dielectric composition used to make electronic components wherein the dielectric composition comprises about 12 to about 15 wt % Gd 2 O 3 , about 18 to about 22.5 wt % Nd 2 O 3 , about 26 to about 40 wt % TiO 2 , about 12 to about 16 wt % BaO, about 0.05 to about 3 wt % CaO, about 0.05 to about 1.5 wt % SrO, about 0.05 to about 1.5 wt % SiO 2 , about 0.05 to about 1 wt % Li 2 O, about 2.5 to about 4.5 wt % Sm 2 O 3 , about 0.1 to about 5 wt % ZnO, about 0.05 to about 3 wt % B 2 O 3 , and about 0.05 to about 1.5 wt % LiF.
16. The composition of claim 15 wherein the composition is lead-free and cadmium-free.
17. An electronic device comprising a multilayer chip capacitor comprising a dielectric layer comprising a composite oxide comprising gadolinium (Gd), neodymium (Nd), titanium (Ti), barium (Ba), calcium (Ca), strontium (Sr), silicon (Si), lithium (Li), tin (Sn), zinc (Zn), boron (B), and fluorine (F).
18. The electronic device of claim 17 further comprising an electrode layer comprising a conductive metal other than silver, gold, palladium or platinum.
19. The electronic device of claim 17 further comprising an electrode layer comprising copper.