IP Library Granted Patent US 7,476,341
Granted Patent B2
US 7,476,341 · App. 11/236,597 · Granted Jan 13, 2009

Process for producing photo-conductor layers for constituting radiation imaging panels

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Quick Facts
Patent No.
US 7,476,341
App. No.
11/236,597
Granted
Jan 13, 2009
Kind
B2
Abstract

A photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image, is produced. The photo-conductor layer contains a Bi 12 MO 20 sintered material, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti. Sintering processing for the formation of the Bi 12 MO 20 sintered material is performed in an inert gas, atmosphere. Alternatively, the sintering processing is performed at a sintering temperature falling within the range of 800° C. to 900° C. and in an atmosphere, in which an oxygen partial pressure P O2 (Pa) satisfies the condition 10 −3 ≦P O2 ≦10 −1 .

Claims (11)

1. A process for producing a photoconductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image, the photo-conductor layer containing a Bi 12 MO 20 sintered material, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti, the process comprising the step of:

performing sintering processing for the formation of the Bi 12 MO 20 sintered material in an inert gas atmosphere,

wherein an oxygen partial pressure in the inert gas atmosphere falls within the range of 1×10 −5 Pa to 20 Pa.

2. A process as defined in claim 1 wherein the inert gas is a rare gas.

3. A process as defined in claim 2 wherein an oxygen partial pressure in the inert gas atmosphere falls within the range of 1×10 −5 Pa to 20 Pa.

4. A process as defined in claim 3 wherein the sintering processing is performed in a sintering furnace which uses a metal muffle.

5. A process as defined in claim 1 wherein the sintering processing is performed in a sintering furnace which uses a metal muffle.

6. A process for producing a photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image, the photo-conductor layer containing a Bi 12 MO 20 sintered material, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti, the process comprising the step of:

performing sintering processing for the formation of the Bi 12 MO 20 sintered material at a sintering temperature falling within the range of 800° C. to 900° C. and in an atmosphere,

in which an oxygen partial pressure P O2 (Pa) satisfies the condition 10 −3 ≦P O2 ≦10 −1 .

7. A process as defined in claim 6 wherein the sintering processing is performed in the atmosphere, such that a ratio of a carbon monoxide partial pressure P CO to a carbon dioxide partial pressure P CO2 satisfies the condition 10 −6 ≦P CO /P CO2 ≦10 −4 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2007
From: FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.)
To: FUJIFILM CORPORATION
Reel/Frame 018904/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 17, 2005
From: TANAKA, MOTOYUKI; NAKAMURA, SHIGERU; MIYAKE, KIYOTERU
To: FUJI PHOTO FILM CO., LTD.
Reel/Frame 017252/0011 →