Semiconductor device and fabrication method thereof
View Patent ↗A semiconductor device includes a second insulating film formed on a second surface of a semiconductor substrate whose first surface has been formed with a first insulating film and an electrode pad, and an opening is made in a portion of the second insulating film directly below the electrode pad. By using the second insulating film as a mask, a through hole is formed in the semiconductor substrate in such a manner that the through hole recedes from an opening edge of the first insulating film. A third insulating film is formed only on the inner wall of the through hole.
1. A semiconductor device comprising:
an electrode pad formed on a first surface of a semiconductor substrate via a first insulating film made of an inorganic material;
a feedthrough electrode for connecting the electrode pad to an external connection terminal formed on a second surface of the semiconductor substrate;
a through hole formed directly below the electrode pad formed via the first insulating film on the first surface of the semiconductor substrate;
a second insulating film formed on the second surface of the semiconductor substrate; and
a third insulating film formed on an inner wall of the through hole,
the second insulating film and the third insulating film being formed so that an opening edge of the second insulating film coincides with an inner periphery surface of the third insulating film as viewed from a second surface side of the semiconductor substrate.
2. A semiconductor device which comprises a plurality of semiconductor devices of claim 1 stacked on one another.
3. The semiconductor device as set forth in claim 1 , comprising a reinforcement plate, bonded on a first surface side of the semiconductor substrate via an adhesive layer, for preventing damage to the semiconductor substrate.
4. The semiconductor device as set forth in claim 2 , which comprises a solid-state image capturing device including:
a reinforcement plate realized by a light transmissive member; and
a charge coupled device (CCD) sensor disposed between the semiconductor substrate and the reinforcement plate.
5. The semiconductor device of claim 1 , wherein the inner periphery surface of the third insulating film in the through hole is the surface closest to the center of the through hole.
6. The semiconductor device of claim 1 , where the third insulating film is formed only on the inner wall of the through hole.