IP Library Granted Patent US 7,294,896
Granted Patent B2
US 7,294,896 · App. 11/237,480 · Granted Nov 13, 2007

Photodetector with charge-carrier reflector

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,294,896
App. No.
11/237,480
Granted
Nov 13, 2007
Kind
B2
Abstract

A photodetector includes a charge carrier collector and a charge carrier concentrator that redirects onto the collector charge carriers that are not initially headed towards the collector.

Claims (20)

1. A photodetector system, comprising:

an absorber layer establishing a mesa and generating charge carriers in response to photon absorption;

a passivation layer on said mesa to reflect charge carriers from side walls of said mesa to reduce lateral diffusion of said charge carriers; and

a collector layer recessed in said mesa to capture reflected charge carriers and charge carriers directly incident from said absorber layer, the lateral boundaries of said collector layer being spaced apart from said side walls;

wherein said collector layer lateral boundary spacing allows increased photodetector system manufacturing yields without adversely affecting overall QE.

2. The apparatus according to claim 1 , further comprising a microlens positioned to direct illumination towards said mesa.

3. A system for detecting photons, comprising:

a reticulated pixel comprising:

a collector layer;

an absorber layer that generates charge carrier pairs in response to

absorbed photons; and

a charge carrier reflector that reflects at least some of said charge carriers toward said collector layer, the lateral boundaries of said collector layer being spaced apart from said charge carrier reflector; and

a microlens positioned to direct photons into said absorber layer;

wherein said collector layer lateral boundary spacing allows increased photodetector system manufacturing yields without adversely affecting overall QE.

4. The system according to claim 3 , wherein said charge-carrier reflector comprises a passivation layer adjacent said absorber layer.

5. The system according to claim 4 , wherein a portion of said absorber layer has a mesa shape, and said passivation layer is disposed on said mesa.

6. The system according to claim 3 , wherein said microlens is spaced apart from said absorber layer by a transparent substrate.

7. The system according to claim 3 , wherein said reticulated pixel further comprises

a buffer layer on said absorber layer; and

a common contact in communication with said absorber layer.