III-nitride multi-channel heterojunction interdigitated rectifier

1. A power semiconductor device comprising:

a first III-nitride heterojunction;

a second III-nitride heterojunction arranged on said first III-nitride heterojunction;

a protective layer disposed over said second III-nitride heterojunction;

a plurality of schottky electrodes extending through said protective layer and electrically connected to said second III-nitride heterojunction;

a plurality of ohmic electrodes extending through said protective layer and electrically connected to said second III-nitride heterojunction;

a first field plate atop each of said plurality of schottky electrodes;

a second field plate atop each of said plurality of ohmic electrodes;

wherein said plurality of schottky electrodes and said plurality of ohmic electrodes are alternately arranged in an interdigitated layout, and wherein said first and second III-nitride heterojunctions are configured to form at least two, two-dimensional electron gas (2DEG) channels.

2. The device of claim 1 , wherein each heterojunction includes a first III-nitride semiconductor body comprised of an alloy of InAlGaN, and a second III-nitride semiconductor body comprised of another alloy of InAlGaN.

3. The device of claim 2 , wherein said first semiconductor body is comprised of AlGaN, and said second semiconductor body is comprised of GaN.

4. The device of claim 2 , wherein said second semiconductor body is undoped.

5. The device of claim 1 , further comprising a buffer layer and a substrate, said buffer layer being disposed between said first III-nitride heterojunction and said substrate.

6. The device of claim 5 , wherein said buffer layer is comprised of AlN.

7. The device of claim 5 , wherein said substrate is Si, SiC, or Sapphire.

8. The device of claim 1 , further including a substrate comprised of a III-nitride compatible material.

9. The device of claim 8 , wherein said substrate is comprised of GaN.

10. The device of claim 1 , wherein said first III-nitride heterojunction includes a first III-nitride semiconductor body comprised of one alloy of InAlGaN, and a second undoped III-nitride semiconductor body comprised of another alloy of InAlGaN and disposed over a buffer layer.

11. The device of claim 10 , wherein said buffer layer is comprised of AlN.

12. The device of claim 10 , wherein said second undoped III-nitride semiconductor body is comprised of GaN.

13. The device of claim 12 , wherein said first III-nitride semiconductor body is comprised of AlGaN.

14. The device of claim 1 , wherein each of said plurality of schottky electrodes is connected to a first electrical feed, and each of said plurality of ohmic electrodes is connected to a second electrical feed.

15. The device of claim 1 , wherein said protective layer prevents the out diffusion of nitrogen.

16. The device of claim 1 , wherein said protective layer is nitrogen rich.

17. The device of claim 1 , wherein said protective layer is comprised of at least one of AlN, HfN, AlGaN, highly doped GaN, highly doped poly GaN, and LPCVD Si3N4.

18. The device of claim 1 , further comprising a lightly doped III-nitride body interposed at least between each of said plurality of schottky electrodes and said second III-nitride heterojunction.

19. The device of claim 1 , further comprising a lightly doped III-nitride body interposed between each of said plurality of schottky electrodes and each of said plurality of ohmic electrodes.

20. The device of claim 18 , wherein said lightly doped III-nitride body is comprised of GaN.

21. The device of claim 19 , wherein said lightly doped III-nitride body is comprised of GaN.