IP Library Granted Patent US 7,791,290
Granted Patent B2
US 7,791,290 · App. 11/238,991 · Granted Sep 7, 2010

Ultra-small resonating charged particle beam modulator

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Quick Facts
Patent No.
US 7,791,290
App. No.
11/238,991
Granted
Sep 7, 2010
Kind
B2
Abstract

A method and apparatus for modulating a beam of charged particles is described in which a beam of charged particles is produced by a particle source and a varying electric field is induced within an ultra-small resonant structure. The beam of charged particles is modulated by the interaction of the varying electric field with the beam of charged particles.

Claims (32)

1. A device comprising:

a source providing a beam of charged particles in a direction; and

a plurality of ultra-small resonant structures collectively inducing a varying electric field when exposed to incoming electromagnetic radiation having a frequency in excess of the microwave frequency and each ultra-small resonant structure embodying at least one dimension in the direction of the beam that is smaller than the wavelength of visible light, whereby said beam of charged particles passes by the ultra-small resonant structures and is modulated by interacting with said varying electric field as it passes by the ultra-small resonant structures.

2. The device of claim 1 wherein each said ultra-small resonant structure is a cavity.

3. The device of claim 1 wherein each said ultra-small resonant structure is a surface plasmon resonant structure.

4. The device of claim 1 wherein each said ultra-small resonant structure is a plasmon resonating structure.

5. The device of claim 1 wherein each said ultra-small resonant structure has a semi-circular shape.

6. The device of claim 1 wherein each said ultra-small resonant structure is symmetric.

7. The device of claim 1 wherein said varying electric field of said resonant structure modulates the angular trajectory of said electron beam.

8. The device of claim 1 wherein said varying electric field of said ultra-small resonant structure modulates the axial motion of said electron beam.

9. The device of claim 1 wherein each said ultra-small resonant structure is a cavity filled with a dielectric material.

10. The device of claim 1 wherein said charged particles are selected from the group comprising: electrons, protons, and ions.

11. The device of claim 1 wherein said source of charged particles is a source selected from the group comprising: an ion gun, a tungsten filament, a cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an ion-impact ionizer.

12. The device of claim 1 wherein each said ultra-small resonant structure is constructed of a material selected from the group comprising: silver (Ag), copper (Cu), a conductive material, a dielectric, a transparent conductor; and a high temperature superconducting material.

13. A method of modulating a beam of charged particles traveling in a direction, comprising:

providing a plurality of ultra-small resonant structures each embodying at least one dimension in the direction of the beam that is smaller than the wavelength of visible light;

inducing a varying electric field at the ultra-small resonant structure by exposing the ultra-small resonant structures to incoming electromagnetic radiation having a frequency in excess of the microwave frequency; and

modulating said beam of charged particles by the interaction of said varying electric field with said beam of charged particles as the beam of charged particles passes by the ultra-small resonant structures.

14. The method of modulating a beam of charged particles of claim 13 wherein said step of inducing includes inducing the varying electric field at a cavity.

15. The method of modulating a beam of charged particles of claim 13 wherein said step of inducing includes inducing the varying electric field at a surface plasmon resonant structure.

16. The method of modulating a beam of charged particles of claim 13 wherein said step of inducing includes inducing the varying electric field at a semi-circular shaped structure.

17. The method of modulating a beam of charged particles of claim 13 wherein said step of inducing includes inducing the varying electric field at a symmetrical structure.

18. The method of modulating a beam of charged particles of claim 13 wherein said step of inducing includes inducing the varying electric field at an asymmetrical structure.

19. The method of modulating a beam of charged particles of claim 13 wherein said varying electric field of said resonant structure modulates the angular trajectory of said electron beam.

20. The method of modulating a beam of charged particles of claim 13 wherein said varying electric field of said ultra-small resonant structures modulates the axial motion of said electron beam.

21. The method of modulating a beam of charged particles of claim 13 wherein said step of inducing includes inducing the varying electric field at a cavity filled with a dielectric material.

22. The method of modulating a beam of charged particles of claim 13 wherein said beam of charged particles comprises a beam of electrons.

23. The method of modulating a beam of charged particles of claim 13 wherein said beam of charged particles comprises a beam of protons.

24. The method of modulating a beam of charged particles of claim 13 wherein said beam of charged particles comprises a beam of ions.

25. The method of modulating a beam of charged particles of claim 13 wherein said beam of charged particles is produced by a device selected from the group comprising: an ion gun; a tungsten filament; a cathode; a planar vacuum triode having a large parasitic capacitance; an electron-impact ionizer; a laser ionizer; a chemical ionizer; a thermal ionizer; and an ion-impact ionizer.

26. The method of modulating a beam of charged particles of claim 13 wherein said step of inducing includes inducing the varying electric field at a silver resonant structure.

27. The method of modulating a beam of charged particles of claim 13 wherein said step of inducing includes inducing the varying electric field at a high temperature superconducting material.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE TO REMOVE PATENT 7,559,836 WHICH WAS ERRONEOUSLY CITED IN LINE 27 OF SCHEDULE I AND NEEDS TO BE REMOVED AS FILED ON 4/10/2012. PREVIOUSLY RECORDED ON REEL 028022 FRAME 0961. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT. Recorded Apr 25, 2018
From: ADVANCED PLASMONICS, INC.
To: V.I. FOUNDERS, LLC
Reel/Frame 046011/0827 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNMENT PREVIOUSLY RECORDED AT REEL: 028022 FRAME: 0961. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECTIVE ASSIGNMENT TO CORRECT THE #27 IN SCHEDULE I OF ASSIGNMENT SHOULD BE: TRANSMISSION OF DATA BETWEEN MICROCHIPS USING A PARTICLE BEAM, PAT. NO 7569836.. Recorded Dec 21, 2017
From: ADVANCED PLASMONICS, INC.
To: V.I. FOUNDERS, LLC
Reel/Frame 044945/0570 →
NUNC PRO TUNC ASSIGNMENT Recorded Oct 9, 2012
From: APPLIED PLASMONICS, INC.
To: ADVANCED PLASMONICS, INC.
Reel/Frame 029095/0525 →
NUNC PRO TUNC ASSIGNMENT Recorded Oct 3, 2012
From: VIRGIN ISLAND MICROSYSTEMS, INC.
To: APPLIED PLASMONICS, INC.
Reel/Frame 029067/0657 →
SECURITY AGREEMENT Recorded Apr 10, 2012
From: ADVANCED PLASMONICS, INC.
To: V.I. FOUNDERS, LLC
Reel/Frame 028022/0961 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 1, 2006
From: HART, PAUL
To: VIRGIN ISLANDS MICROSYSTEMS, INC.
Reel/Frame 017719/0920 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2005
From: GORRELL, JONATHAN; DAVIDSON, MARK; MAINES, MICHAEL E.
To: VIRGIN ISLANDS MICROSYSTEMS, INC.
Reel/Frame 017053/0789 →