Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography

1. A method for depositing, by ion beam sputtering, a multilayer reflective coating of a reflective mask blank for EUV lithography on a substrate having a concave defect formed thereon, comprising:

carrying out ion beam sputtering so that an absolute value of an angle α formed between a normal line of a substrate and sputtered particles landing on the substrate is maintained so as to satisfy the formula of 35°≦α≦80° while rotating the substrate about a central axis thereof.

2. The method according to claim 1 , further comprising:

depositing a capping layer on the multilayer reflective coating by ion beam sputtering; and

carrying out the ion beam sputtering so that an absolute value of an angle α formed between a normal line of the substrate and sputtered particles falling on the substrate is maintained so as to satisfy the formula of 35°≦α≦80° while rotating the substrate about a central axis thereof, when depositing the capping layer on the multilayer reflective coating.

3. A method for depositing, by ion beam sputtering, an underlayer of a reflective mask blank for EUV lithography on a substrate having a concave defect formed thereon, comprising:

carrying out ion beam sputtering so that an absolute value of an angle α formed between a normal line of a substrate and sputtered particles falling on the substrate is maintained so as to satisfy the formula of 35°≦α≦80° while rotating the substrate about a central axis thereof, when depositing an underlayer on the substrate.

4. The method according to claim 3 , further comprising depositing a multilayer reflective coating of a reflective mask blank for EUV lithography on the underlayer by sputtering.

5. A method for depositing a multilayer reflective coating of a reflective mask blank for EUV lithography on a substrate having a concave defect formed thereon, comprising:

depositing an underlayer on a substrate by ion beam sputtering, and depositing a multilayer reflective coating on the underlayer by ion beam sputtering;

carrying out the ion beam sputtering so that an absolute value of an angle α formed between a normal line of the substrate and sputtered particles landing on the substrate is maintained so as to satisfy the formula of 35°≦α≦80° while rotating the substrate about a central axis thereof, when depositing the underlayer and when depositing the multilayer reflective coating.

6. The method according to claim 5 , further comprising:

depositing a capping layer on the multilayer reflective coating by ion beam sputtering; and

carrying out the ion beam sputtering so that an absolute value of an angle α formed between a normal line of the substrate and sputtered particles falling on the substrate is maintained so as to satisfy the formula of 35°≦α≦80° while rotating the substrate about a central axis thereof, when depositing the capping layer.

7. A method for fabricating a reflective mask blank for EUV lithography, comprising:

depositing a multilayer reflective coating on a substrate by the method defined in claim 1 ; followed by depositing an absorbing layer on the multilayer reflective coating by sputtering.

8. A method for fabricating a reflective mask blank for EUV lithography, comprising:

depositing an underlayer on a substrate by the method defined in claim 3 ; followed by depositing a multilayer reflective coating of a reflective mask blank for EUV lithography on the underlayer by sputtering, and then;

depositing an absorbing layer on the multilayer reflective coating by sputtering.

9. A method for fabricating a reflective mask blank for EUV lithography, comprising:

depositing an underlayer and a multilayer reflective coating on a substrate by the method defined in claim 5 ; followed by depositing an absorbing layer on the multilayer reflective coating by sputtering.

10. A method for fabricating a reflective mask blank for EUV lithography, comprising:

depositing an underlayer and a multilayer reflective coating on a substrate by the method defined in claim 5 ; followed by depositing a capping layer on the multilayer reflective coating by ion beam sputtering, and depositing an absorbing layer on the capping layer by sputtering, and;

carrying out the ion beam sputtering so that an absolute value of an angle α formed between a normal line of the substrate and sputtered particles falling on the substrate is maintained so as to satisfy the formula of 35°≦α≦80° while rotating the substrate about a central axis thereof, when depositing the capping layer.