MOS capacitor type semiconductor device and crystal oscillation device using the same
View Patent ↗A compact semiconductor device forming a capacitive element for high frequencies that allows good capacitance change to be achieved is provided. AMOS capacitor type semiconductor device includes a gate electrode formed on a surface of a substrate through a gate insulating film, source/drain regions provided to have the gate electrode therebetween, and a back gate including a contact diffusion region for contacting the substrate. Voltage applied across the regions between the source or drain region and the gate electrode and between the gate electrode and the back gate is adjusted, so that charge accumulated at the gate insulating film can be adjusted. In the device, the distance between the source and drain regions or the distance between the back gate and the gate electrode is determined so that electrons or holes can be accumulated at the interface between the gate insulating film and the substrate within a cycle of the applied voltage.
1. A MOS capacitor type semiconductor device, comprising:
a gate electrode, formed on a surface of a substrate through a gate insulating film;
source/drain regions, provided to have the gate electrode between them; and
a back gate having a contact diffusion region for contacting the substrate;
wherein voltage is applied between the source/drain region and the gate electrode or between the gate electrode and the back gate being adjusted so that charge accumulated at the gate insulating film can be adjusted; and
the distance between the source and drain regions or the distance between the back gate and the gate electrode is determined so that electrons or holes can be accumulated at the interface between the gate insulating film and the substrate within a cycle of a frequency superposed to the applied voltage.
2. The MOS capacitor type semiconductor device, according to claim 1 , wherein the source-drain distance and the distance between the back gate and the gate electrode are determined so that electrons or holes can be accumulated at the interface between the gate insulating film and the substrate within a cycle of a frequency superposed to the applied voltage.
3. The MOS capacitor type semiconductor device according to claim 2 , wherein the source-drain distance L SD and the distance L BG between the back gate and the gate electrode are set to satisfy the following expressions (1) and (2):
L SD <Ln , when Ln =sqrt( Dn×τ n ) (1)
where Ln is the moving distance of electrons, Dn is the diffusion coefficient of electrons, τ n is a cycle of a frequency for use [s] and
L BG <Ln , when Wp sqrt( Dn×τ n ) (2)
where Wp is the moving distance of holes, Dp is the diffusion coefficient of holes, and τ p is a cycle of a frequency for use [s].
4. The MOS capacitor type semiconductor device according to claim 3 , wherein a substrate contact forming the back gate is provided so that the source-drain distance L SD and the distance L BG between the back gate and the gate electrode are so set that the source/drain regions are provided in the circle whose radius equals the distance Ln from the center of the gate electrode determined according to expression (1) defined based on a frequency for use, and the back gate is provided in the circle whose radius equals the distance Wp determined according to expression (2) defined based on a frequency for use.
5. The MOS capacitor type semiconductor device according to claim 4 , wherein the center of the gate electrode is located in the center of the gravity of the gate electrode.
6. The MOS capacitor type semiconductor device according to claim 1 , wherein the source-drain distance I SD is set to satisfy the following expression (1) determined based on a frequency for use:
L SD <Ln , when Ln =sqrt( Dn×τ n ) (1)
where Ln is the moving distance of electrons, Dn is the diffusion coefficient of electrons, and In is a cycle of a frequency for use [s].
7. The MOS capacitor type semiconductor device according to claim 1 , wherein the distance L BG between the back gate and the gate electrode is set to satisfy the following expression (2) determined based on a frequency for use:
L BG <Ln , when Wp sqrt( Dn×τ n ) (2)
where Wp is the moving distance of holes, Dp is the diffusion coefficient of holes, and τ p is a cycle of a frequency for use [s].
8. The MOS capacitor type semiconductor device according to claim 1 , wherein the gate electrode is arranged in an H shape.
9. The MOS capacitor type semiconductor device according to claim 1 , wherein the gate electrode is arranged in a cross shape.
10. The MOS capacitor type semiconductor device according to claim 1 being formed in a well formed on a surface of the substrate and isolated from the substrate.
11. A crystal oscillation device that uses a MOS capacitor type semiconductor device according to claim 1 as a load capacitor, wherein the load capacitance for the crystal oscillator is variable, so that the frequency is rendered variable, and
a control potential is provided to the gate electrode, drain, or source of the MOS capacitor type semiconductor device as a load capacitance, so that the potential difference is controlled to allow the capacitance to be variable.
12. The crystal oscillation device according to claim 11 , wherein the MOS capacitor type semiconductor device is employed as a unit device, and at least two the devices are provided to form a MOS capacitor.
13. The crystal oscillation device according to claim 12 , wherein the MOS semiconductor devices are diagonally provided so that the center of gravity is positioned between the two devices.