IP Library Granted Patent US 7,470,604
Granted Patent B2
US 7,470,604 · App. 11/244,039 · Granted Dec 30, 2008

Method for manufacturing display device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,470,604
App. No.
11/244,039
Granted
Dec 30, 2008
Kind
B2
Abstract

The present invention, the quality of the surface of a substrate is improved and the wettability thereof is controlled by light irradiation from the reverse side with respect to the substrate having the conductive layer. A conductive material or an insulating material is adhered on the modified surface by discharging it (including jetting, etc.), or the like to form a conductive layer and an insulating layer. The processing efficiency by the light can be enhanced by function of the light absorption and energy radiation of the photocatalytic substance. Furthermore, the mask layer is formed selectively on the conductive layer and the wettability of the region on the conductive layer that is a non-irradiation region is also controlled.

Claims (43)

1. A method for manufacturing a display device, comprising the steps of:

forming a first conductive layer which has a non-light-transmitting property over a substrate which has a light-transmitting property;

forming an insulating layer over the substrate and the first conductive layer;

forming a mask layer selectively over the insulating layer overlapping with the first conductive layer;

forming a photoactive substance over the insulating layer and the mask layer;

forming at least a first region and a second region by passing light through the substrate and irradiating the photoactive substance with light; and

removing the mask layer and the photoactive substance which is formed over the mask layer and forming a third region; and

forming a second conductive layer at the second region and the third region,

wherein the second conductive layer includes a conductive material,

wherein a wettability of the second region with respect to the conductive material is higher than a wettability of the first region with respect to the conductive material, and

wherein a wettability of the third region with respect to the conductive material is higher than a wettability of the first region with respect to the conductive material.

2. A method for manufacturing a display device, comprising the steps of:

forming a first conductive layer which includes a gate electrode region and a gate wiring region and has a non-light-transmitting property over a substrate having a light-transmitting property;

forming an insulating layer over the substrate and the first conductive layer;

forming a semiconductor layer over an insulating layer overlapping with the gate electrode region;

forming a mask layer selectively over the insulating layer overlapping with the gate wiring region;

forming a photoactive substance over the semiconductor layer and the mask layer;

forming at least a first region and a second region by irradiating the photoactive substance with light passed through the substrate;

removing the mask layer and the photoactive substance which is formed over the mask layer and forming a third region, and

forming a second conductive layer at the second region and the third region,

wherein the second conductive layer includes a conductive material,

wherein a wettability of the second region with respect to the conductive material is higher than a wettability of the first region with respect to the conductive material, and

wherein a wettability of the third region with respect to the conductive material is higher than a wettability of the first region with respect to the conductive material.

3. A method for manufacturing a display device, comprising the steps of:

forming a first conductive layer which includes a gate electrode region and has a non-light transmitting property over a substrate having a light-transmitting property;

forming an insulating layer over the substrate and the first conductive layer;

forming a semiconductor layer over an insulating layer overlapping with the gate electrode region;

forming a photoactive substance over the semiconductor layer;

forming at least a first region and a second region by irradiating the photoactive substance with light passed through the substrate, and

forming a second conductive layer at the second region,

wherein the second conductive layer includes a conductive material, and

wherein a wettability of the second region with respect to the conductive material is higher than a wettability of the first region with respect to the conductive material.

4. The method for manufacturing a display device according to claim 1 , wherein a substance containing a triphenylmethane derivative, a substance containing an azobenzene derivative, or a spiropyran derivative is formed as the photoactive substance.

5. The method for manufacturing a display device according to claim 2 , wherein a substance containing a triphenylmethane derivative, a substance containing an azobenzene derivative, or a spiropyran derivative is formed as the photoactive substance.

6. The method for manufacturing a display device according to claim 3 , wherein a substance containing a triphenylmethane derivative, a substance containing an azobenzene derivative, or a spiropyran derivative is formed as the photoactive substance.

7. The method for manufacturing a display device according to claim 1 , further comprising:

forming a pixel electrode after forming the second conductive layer.

8. The method for manufacturing a display device according to claim 2 , further comprising:

forming a pixel electrode after forming the second conductive layer.

9. The method for manufacturing a display device according to claim 3 , further comprising:

forming a pixel electrode after forming the second conductive layer.

10. The method for manufacturing a display device according to claim 1 , wherein the mask layer comprises a resin material.

11. The method for manufacturing a display according to claim 2 , wherein the mask layer comprises a resin material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 6, 2005
From: FUJII, GEN
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 017120/0065 →
Priority Claims (1)
JP 2004-296525 · Oct 8, 2004 · national
Continuity (1)
Related Publication 20060121745A1 · Jun 8, 2006