Multilayered electrode and organic light emitting diode having the same
View Patent ↗An organic light emitting diode, which has a pixel electrode, the pixel electrode constructed with a first layer comprising metal oxide on the substrate; a second layer comprising silver alloyed with at least one metal selected from a group consisting of lanthanide series elements and actinide series elements on the first layer; and a third layer comprising metal oxide on the second layer. As such, there are provided the second layer comprising the silver alloy, and the first and third layer comprising the metal oxide and formed above and below the second layer so that adhesion of a silver alloy (e.g., ATD alloy) may be enhanced, and an anode having enhanced reflectance may also be provided by using silver with increased reflectance.
1. An electrode for an organic light emitting diode, comprising:
a first layer comprising metal oxide, the first layer having the thickness of not more than 100 Å;
a second layer formed on the first layer, the second layer comprising silver alloy including silver and at least one first metal selected from a group consisting of the lanthanide series elements and the actinide series elements, the second layer having the thickness of not less than 1,000 Å; and
a third layer comprising a conducting material on the second layer, the third layer having the thickness of not more than 100 Å.
2. The electrode as claimed in claim 1 , wherein the silver alloy further contains at least one second metal selected from the Group 11 elements (IB).
3. The electrode as claimed in claim 1 , wherein the silver alloy contains silver, samarium and at least one of Cu and Au.
4. The electrode as claimed in claim 3 , wherein the samarium is contained at an atomic percent of 0.1 to 0.6.
5. The electrode as claimed in claim 2 , wherein the second metal selected from the Group 11 elements (IB) is contained at an atomic percent of 0.4 to 1.
6. The electrode as claimed in claim 3 , wherein the silver alloy further contains terbium.
7. The electrode as claimed in claim 6 , wherein the terbium is contained at an atomic percent of 0.4 to 1.
8. The electrode as claimed in claim 1 , wherein each thickness of the first layer and the third layer is smaller than the thickness of the second layer.
9. The electrode as claimed in claim 1 , wherein each of the first layer and the third layer is formed of one of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).
10. An organic light emitting diode comprising the electrode as claimed in claim 1 .
11. An organic light emitting diode, comprising:
a first electrode comprising:
a first layer comprising metal oxide, the first layer having the thickness of not more than 100 Å;
a second layer formed on the first layer, the second layer comprising silver alloy including silver and at least one first metal selected from a group consisting of the lanthanide series elements and the actinide series elements, the second layer having the thickness of not less than 1,000 Å; and
a third layer comprising a conducting material on the second layer, the third layer having the thickness of not more than 100 Å;
an emission layer formed on the first electrode; and
a second electrode formed on the emission layer.
12. The organic light emitting diode as claimed in claim 11 , wherein the silver alloy further contains at least one second metal selected from the Group 11 elements (IB).
13. The organic light emitting diode as claimed in claim 11 , wherein the silver alloy contains silver, samarium and at least one of Cu and Au.
14. The organic light emitting diode as claimed in claim 11 , wherein the silver alloy further contains terbium.
15. The organic light emitting diode as claimed in claim 11 , wherein the silver alloy contains Ag, Sm, Cu, Au, and Tb, and each of the first layer and the third layer is formed of one of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).
16. The organic light emitting diode as claimed in claim 15 , wherein the Sm is contained at an atomic percent of 0.1 to 0.6, each of the Th, Au and Cu is contained at an atomic percent of 0.4 to 1.
17. The organic light emitting diode as claimed in claim 11 , wherein each thickness of the first layer and the third layer is smaller than the thickness of the second layer.
18. The organic light emitting diode as claimed in claim 11 , wherein each of the first layer and the third layer is formed of one of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).
19. An organic light emitting diode, comprising:
a first electrode comprising:
a first layer comprising metal oxide, the first layer having the thickness of not more than 100 Å;
a second layer formed on the first layer, the second layer comprising silver alloy including Ag, Sm, Tb, Au and Cu, the second layer having the thickness of not less than 1,000 Å; and
a third layer comprising metal oxide on the second layer, the third layer having the thickness of not more than 100 Å;
an emission layer formed on the first electrode; and
a second electrode formed on the emission layer.