Integrated microelectromechanical wavelength selective switch and method of making same
View Patent ↗A fully integrated microelectromechanical (MEMS) lxK wavelength selective switch (WSS) includes an array of N solid-immersion micromirrors (SIMs) and a K+1 dispersion waveguide arrays that are integrally fabricated together. In one embodiment, the WSS is fabricated in Silicon. In another embodiment, the N actuators of the SIMs are etched in the Silicon layer of a Silicon-on Insulator (SOI) wafer. Thereafter, a Silica layer is deposited on the Silicon layer and the K+1 waveguide arrays and the mirrors for the N SIMs are etched in that Silica layer. In yet another embodiment, the K+1 dispersion waveguide arrays, except for a small portion of the common confocal coupler, are fabricated using a material selected from a group including Silica, sol-gel, polymers, that is deposited on a first wafer selected from a group including Silicon, Saphire, or other glass insulator material and the remaining portion of the common confocal coupler and the N SIMs are fabricated in a Silicon wafer, and the first wafer and Silicon wafer are then butt-coupled together.
1. An optical apparatus for switching a multi-wave input optical signal of N channels comprising:
a planar integrated lightwave circuit (PLC) including
K+1 input/output waveguides, where K is an integer greater than or equal to one;
K+1 dispersive waveguide arrays, each waveguide array including a coupler coupled to a different one of the K+1 input/output waveguides, an arrayed waveguide grating (AWG) connected at a first end to the coupler and connected at a second end to a first surface of a common confocal coupler; and
an array of N solid-immersion micromirror (SIM) devices, where N is an integer greater than one, each SIM device placed at a different location on a second opposing surface of the common confocal coupler and each SIM device having a respective actuator for providing independently controllable rotation,
such that the light of one channel received by any one SIM device, from a first dispersive waveguide array is selectively reflected back through a second dispersive waveguide array connected to the first surface of the common confocal coupler.
2. The optical switching apparatus of claim 1 wherein the PLC is fabricated using a Silicon-on-insulator wafer.
3. The optical switching apparatus of claim 1
wherein the PLC is fabricated using a Silicon wafer with a thin oxide layer and a Silicon layer deposited thereon, N actuators of the SIM devices being formed by etching the Silicon layer, and
wherein a Silica layer is deposited on the Silicon layer and both the K+1 waveguide arrays are formed and N mirrors for the SIM devices are etched in the Silica layer.
4. The optical switching apparatus of claim 1 wherein
the K+1 dispersive waveguide arrays, except for a small portion of the common confocal coupler, are fabricated using a material selected from a group including Silica, sol-gel, polymers, that is deposited on a first wafer selected from a group including Silicon, Saphire, or other glass insulator material, and
the remaining portion of the common confocal coupler and the N SIM devices are fabricated in a Silicon wafer, and wherein the first wafer and Silicon wafer are then butt-coupled together to form the PLC.
5. The optical switching apparatus of claim 1 wherein
the K+1 dispersive waveguide arrays, except for a small portion of the common confocal coupler, are fabricated using a material selected from a group including Silica, sol-gel, polymers, that is deposited on a first wafer selected from a group including Silicon, Saphire, or other glass insulator material, and
the remaining portion of the common confocal coupler and the N SIM devices are fabricated in a Silicon wafer, and wherein the first wafer and Silicon wafer are then butt-coupled together to form the PLC.
6. An optical switching apparatus for switching a multi-wave input optical signal of N channels comprising:
a planar integrated lightwave circuit (PLC) including
K+1 input/output waveguides, where K is an integer greater than or equal to one;
K+1 first waveguide arrays, each first waveguide array having at least two waveguides and having a free-spectral range equal to the channel separation of the input optical signal, the first waveguide array introducing a first dispersion into the input optical signal;
K+1 dispersive waveguide arrays, each waveguide array including a coupler coupled to a different one of the K+1 first waveguide arrays, an arrayed waveguide grating (AWG) connected at a first end to the coupler and connected at a second end to a first surface of a common confocal coupler,
wherein each of the K+1 dispersive waveguide arrays has a free-spectral range at least equal to the bandwidth of all of the channels of the input optical signal, and
wherein each first waveguide array couples an optical signal between a different one of the K+1 input/output waveguides and a respective one of the K+1 dispersive waveguide arrays,
such that each of the K+1 dispersive waveguide arrays produces a second dispersion which adds to the first dispersion introduced to the input optical signal by a corresponding one of the K+1 first waveguide arrays to generate discrete spots on a second opposing surface of the common confocal coupler, one spot for each of the N channels; and
an array of N solid-immersion micromirror (SIM) devices, where N is an integer greater than one, each SIM device placed at a different location on the second surface of the common confocal coupler and each SIM device further including a respective actuator for providing independently controllable rotation,
such that the light of one channel received by any one SIM device from a first dispersive waveguide array is selectively reflected back through a second dispersive waveguide array connected to the first surface of the common confocal coupler.
7. The optical switching apparatus of claim 6 wherein the PLC is fabricated using a Silicon-on-insulator wafer.
8. The optical switching apparatus of claim 6
wherein the PLC is fabricated using a Silicon wafer with a thin oxide layer and a Silicon layer deposited thereon, N actuators of the SIM devices being formed by etching the Silicon layer, and
wherein a Silica layer is deposited on the Silicon layer and both the K+1 waveguide arrays are formed and N mirrors for the SIM devices are etched in the Silica layer.