Bandgap reference voltage circuit
View Patent ↗A reference voltage circuit includes first circuitry that generates a thermal voltage that is approximately proportional to absolute temperature, a first voltage multiplier, second circuitry that generates an inverse thermal voltage that is approximately inversely proportional to absolute temperature, a second voltage multiplier and a summer. The first voltage multiplier multiplies the thermal voltage to obtain a first multiplied voltage. The multiplied voltage is not equal to the thermal voltage. The second voltage multiplier multiplies the inverse thermal voltage to obtain a second multiplied voltage. The summer sums the first multiplied voltage with the second multiplied voltage to obtain a reference voltage.
1. A reference voltage circuit, comprising:
a first means for generating a thermal voltage and multiplying the thermal voltage to obtain a first multiplied voltage, the multiplied voltage not being equal to the thermal voltage, wherein the thermal voltage is approximately proportional to absolute temperature, wherein the first means includes:
a first field effect transistor (FET) having a source, a gate and a drain, the source of the first FET being connected to a power supply for the reference voltage circuit and the gate of the first FET being connected to the drain of the first FET,
a second FET having a source, a gate and a drain, the source of the second FET being connected to the power supply, and the gate of the second FET being connected to the gate of the first FET,
a third FET having a source, a gate and a drain, the source of the third FET being connected to the power supply, and the gate of the third FET being connected to the gate of the first FET,
a fourth FET having a source, a gate and a drain, the drain of the fourth FET being connected to the drain of the first FET and the gate of the fourth FET being connected to the drain of the fourth FET,
a fifth FET having a source, a gate and a drain, the drain of the fifth FET being connected to the drain of the second FET and the gate of the fifth FET being connected to the drain of the second FET,
a first bipolar transistor having an emitter, a collector and a base, the base and the collector of the first bipolar transistor being connected to a ground for the reference voltage circuit,
a second bipolar transistor having an emitter, a collector and a base, the base and the collector of the second bipolar transistor being connected to the ground, and the emitter for the second bipolar transistor being connected to the source of the fifth FET, and
a first resistor connected between the source of the fourth FET and the emitter or the first bipolar transistor;
a second means for generating an inverse thermal voltage that is approximately inversely proportional to absolute temperature and multiplying the inverse thermal voltage to obtain a second multiplied voltage, wherein the second means includes:
a sixth FET having a source, a gate and a drain, the source of the sixth FET being connected to the power supply,
a seventh FET having a source, a gate and a drain, the source of the seventh FET being connected to the power supply, and the gate of the seventh FET being connected to the gate of the sixth FET,
an eighth FET having a source, a gate and a drain, the source of the eighth FET being connected to the power supply, and the gate of the eighth FET being connected to the gate of the sixth FET,
a ninth FET having a source, a gate and a drain, the drain of the ninth FET being connected to the drain of the sixth FET, and the gate of the ninth FET being connected to the drain of the ninth FET,
a tenth FET having a source, a gate and a drain, the drain of the tenth FET being connected to the drain of the seventh FET, and the gate of the tenth FET being connected to the drain of the ninth FET,
a third bipolar transistor having an emitter, a collector and a base, the base and the collector of the third bipolar transistor being connected to the ground, and the emitter for the third bipolar transistor being connected to the source of the ninth FET, and
a second resistor connected between the source of the tenth FET and the ground; and,
a third means for summing the first multiplied voltage with the second multiplied voltage to obtain a reference voltage, wherein the third means includes:
a third resistor connected between the drain of the eighth FET and the ground, and
a fourth resistor connected between the drain of the third FET and the drain of the eighth FET.
2. A reference voltage circuit as in claim 1 :
wherein the first means additionally includes:
an eleventh FET having a source, a gate and a drain, the source of the eleventh FET being connected to the power supply, and the gate of the eleventh FET being connected to the gate of the first FET, and
a twelfth FET having a source, a gate and a drain, the source of the twelfth FET being connected to the power supply, and the gate of the twelfth FET being connected to the gate of the first FET;
wherein the second means additionally includes:
a thirteenth FET having a source, a gate and a drain, the source of the thirteenth FET being connected to the power supply, and the gate of the thirteenth FET being connected to the gate of the sixth FET, and
a fourteenth FET having a source, a gate and a drain, the source of the fourteenth FET being connected to the power supply, and the gate of the fourteenth FET being connected to the gate of the sixth FET; and,
wherein the third means additionally includes:
a fifth resistor connected between the drain of the thirteenth FET and the ground,
a sixth resistor connected between the drain of the eleventh FET and the drain of the thirteenth FET,
a seventh resistor connected between the drain of the fourteenth FET and the ground, and
a eighth resistor connected between the drain of the twelfth FET and the drain of the fourteenth FET.
3. A reference voltage circuit, comprising:
a first means for generating a thermal voltage and multiplying the thermal voltage to obtain a first multiplied voltage, the multiplied voltage not being equal to the thermal voltage, wherein the thermal voltage is approximately proportional to absolute temperature, wherein the first means includes:
a first field effect transistor (FET) having a source, a gate and a drain, the source of the first FET being connected to a power supply for the reference voltage circuit,
a second FET having a source, a gate and a drain, the source of the second FET being connected to the power supply, and the gate of the second FET being connected to the gate of the first FET,
a third FET having a source, a gate and a drain, the source of the third FET being connected to the power supply, and the gate of the third FET being connected to the gate of the first FET,
a first bipolar transistor having an emitter, a collector and a base, the base and the collector of the first bipolar transistor being connected to a ground for the reference voltage circuit,
a second bipolar transistor having an emitter, a collector and a base, the base and the collector of the second bipolar transistor being connected to the ground, and the emitter for the second bipolar transistor being connected to the drain of the second FET,
a first resistor connected between the drain of the first FET and the emitter or the first bipolar transistor, and
a first operational amplifier (OP AMP) having a negative input, a positive input and an output, the negative input of the first OP AMP being connected to the drain of the first FET, the positive input of the first OP AMP being connected to the drain of the second FET and the output of the first OP AMP being connected to the gate of the first FET;
a second means for generating an inverse thermal voltage that is approximately inversely proportional to absolute temperature and multiplying the inverse thermal voltage to obtain a second multiplied voltage, wherein the second means includes:
a fourth FET having a source, a gate and a drain, the source of the fourth FET being connected to the power supply,
a fifth FET having a source, a gate and a drain, the source of the fifth FET being connected to the power supply, and the gate of the fifth FET being connected to the gate of the fourth FET,
a sixth FET having a source, a gate and a drain, the source of the sixth FET being connected to the power supply, and the gate of the sixth FET being connected to the gate of the fourth FET,
a third bipolar transistor having an emitter, a collector and a base, the base and the collector of the third bipolar transistor being connected to the ground, and the emitter for the third bipolar transistor being connected to the drain of the fifth FET,
a second resistor connected between the drain of the sixth FET and the ground, and
a second OP AMP having a negative input, a positive input and an output, the negative input of the second OP AMP being connected to the drain of the sixth FET, the positive input of the second OP AMP being connected to the drain of the fifth FET and the output of the second OP AMP being connected to the gate of the sixth FET; and,
a third means for summing the first multiplied voltage with the second multiplied voltage to obtain a reference voltage, wherein the third means includes:
a third resistor connected between the drain of the fourth FET and the ground, and
a fourth resistor connected between the drain of the third FET and the drain of the fourth FET.
4. A reference voltage circuit, comprising:
a first means for generating a thermal voltage and multiplying the thermal voltage to obtain a first multiplied voltage, the multiplied voltage not being equal to the thermal voltage, wherein the thermal voltage is approximately proportional to absolute temperature, wherein the first means includes:
a first field effect transistor (FET) having a source, a gate and a drain, the source of the first FET being connected to a power supply for the reference voltage circuit,
a second FET having a source, a gate and a drain, the source of the second FET being connected to the power supply, and the gate of the second FET being connected to the gate of the first FET,
a third FET having a source, a gate and a drain, the source of the third FET being connected to the power supply, and the gate of the third FET being connected to the gate of the first FET,
a first bipolar transistor having an emitter, a collector and a base, the base and the collector of the first bipolar transistor being connected to a ground for the reference voltage circuit,
a second bipolar transistor having an emitter, a collector and a base, the base and the collector of the second bipolar transistor being connected to the ground, and the emitter for the second bipolar transistor being connected to the drain of the second FET,
a first resistor connected between the drain of the first FET and the emitter of the first bipolar transistor, and
a first operational amplifier (OP AMP) having a negative input, a positive input and an output, the negative input of the first OP AMP being connected to the drain of the first FET, the positive input of the first OP AMP being connected to the drain of the second FET and the output of the first OP AMP being connected to the gate of the first FET;
a second means for generating an inverse thermal voltage that is approximately inversely proportional to absolute temperature and multiplying the inverse thermal voltage to obtain a second multiplied voltage, wherein the second means includes:
a fourth FET having a source, a gate and a drain, the source of the fourth FET being connected to the power supply,
a fifth FET having a source, a gate and a drain, the source of the fifth FET being connected to the power supply, and the gate of the fifth FET being connected to the gate of the fourth FET,
a second resistor connected between the drain of the fourth FET and the ground, and
a second OP AMP having a negative input, a positive input and an output, the negative input of the second OP AMP being connected to the drain of the second FET, the positive input of the second OP AMP being connected to the drain of the fourth FET and the output of the second OP AMP being connected to the gate of the fourth FET; and,
a third means for summing the first multiplied voltage with the second multiplied voltage to obtain a reference voltage, wherein the third means includes:
a third resistor connected between the drain of the fifth FET and the ground, and
a fourth resistor connected between the drain of the third FET and the drain of the fifth FET.
5. A reference voltage circuit, comprising:
a first means for generating a thermal voltage and multiplying the thermal voltage to obtain a first multiplied voltage, the multiplied voltage not being equal to the thermal voltage, wherein the thermal voltage is approximately proportional to absolute temperature, wherein the first means includes:
a first field effect transistor (FET) having a source, a gate and a drain, the source of the first FET being connected to a power supply for the reference voltage circuit,
a second FET having a source, a gate and a drain, the source of the second FET being connected to the power supply, and the gate of the second FET being connected to the gate of the first FET,
a third FET having a source, a gate and a drain, the source of the third FET being connected to the power supply, and the gate of the third FET being connected to the gate of the first FET,
a first bipolar transistor having an emitter, a collector and a base, the base and the collector of the first bipolar transistor being connected to a ground for the reference voltage circuit,
a second bipolar transistor having an emitter, a collector and a base, the base and the collector of the second bipolar transistor being connected to the ground, and the emitter for the second bipolar transistor being connected to the drain of the second FET,
a first resistor connected between the drain of the first FET and the emitter or the first bipolar transistor, and
a first operational amplifier (OP AMP) having a negative input, a positive input and an output, the negative input of the first OP AMP being connected to the drain of the first FET, the positive input of the first OP AMP being connected to the drain of the second FET and the output of the first OP AMP being connected to the gate of the first FET;
a second means for generating an inverse thermal voltage that is approximately inversely proportional to absolute temperature and multiplying the inverse thermal voltage to obtain a second multiplied voltage, wherein the second means includes:
a second OP AMP having a negative input, a positive input and an output, the positive input of the second OP AMP being connected to the drain of the second FET and the negative input of the second OP AMP being connected to the output of the second OP AMP,
a third OP AMP having a negative input, a positive input and an output,
a second resistor connected between the output of the second OP AMP and the positive input of the third OP AMP,
a third resistor connected between the positive input of the third OP AMP and the ground,
a fourth resistor connected between the output of the third OP AMP and the negative input of the third OP AMP, and
a fifth resistor connected between the negative input of the third OP AMP and the ground; and,
a third means for summing the first multiplied voltage with the second multiplied voltage to obtain a reference voltage, wherein the third means includes:
a sixth resistor connected between the drain of the third FET and the output of the third OP AMP.
6. A reference voltage circuit, comprising:
a proportional-to-absolute-temperature (PTAT) current source circuit configured to output a PTAT current (I PAT );
a base-emitter current source circuit configured to output an I BE current, the base-emitter current source circuit having a current mirror configuration comprising a pair of transistors operable to propagate an I BE1 current through a V BE resistor coupled to one of a source or a drain of one of the pair of transistors; and
a sum circuit comprising a first resistor (R 1 )coupled to a second resistor (R 2 ) with a summing node N located at the junction of the first and the second resistors, wherein a distal end of the first resistor (R 1 )is coupled to the PTAT current source circuit for propagating the PTAT current through the first and the second resistors, and wherein the summing node N is coupled to the base-emitter current source circuit for propagating the I BE current through the second resistor (R 2 ), thereby providing for a summing of the I BE current and the PTAT current through the second resistor (R 2 ) and generation of a reference voltage (V REF ) at the summing node N, the reference voltage (V REF ) defined by a first equation V REF =I PAT *R 1 +(I PAT +I BE )*R 2 and further defined by a constant (Q) that is directly proportional to a ratio of the second resistor (R 2 ) to the V BE resistor.
7. The reference voltage circuit as in claim 6 wherein the resistance values of the V BE resistor and the second resistor (R 2 ) are selected to generate a desired reference voltage (V REF ).
8. The reference voltage circuit as in claim 6 , wherein the base-emitter current source circuit further comprises an output transistor having a size parameter N that is selected for generating the I BE current as a multiple of the I BE1 current and defined by a second equation I BE =N*I BE1 .
9. The reference voltage circuit as in claim 6 , wherein the ratio of the second resistor (R 2 ) to the V BE resistor is selected for setting Q to a value less than one.
10. The reference voltage circuit as in claim 6 , wherein the ratio of the second resistor (R 2 ) to the V BE resistor is selected for setting Q to a value greater than one.
11. The reference voltage circuit as in claim 6 , wherein the pair of transistors is a pair of N-channel FETs.
12. The reference voltage circuit as in claim 6 , wherein the pair of transistors is a pair of P-channel FETs.