Cantilever-type near-field probe for optical data storage and method of manufacturing the same
View Patent ↗Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.
1. A cantilever-type near-field probe for a head of an optical data storage; the cantilever-type near-field probe comprising:
a silicon substrate with a through-hole passing through upper and lower portions thereof;
a dielectric film formed on a bottom portion of the silicon substrate as a mask layer;
an oxide film deposited in a parabolic shape on the upper portion of the silicon substrate, and having an aperture formed in a vertex of the oxide film and communicating with the through-hole of the silicon substrate; and
a metal film deposited on an upper portion of the oxide film, and having a near-field aperture communicating with the aperture of the oxide film and having a high throughput.
2. The cantilever-type near-field probe as claimed in claim 1 , wherein the dielectric film formed on the bottom portion of the silicon substrate as the mask layer includes a silicon nitride film having a thickness of 300 nm.
3. The cantilever-type near-field probe as claimed in claim 1 , wherein the oxide film deposited in a parabolic shape on the upper portion of the silicon substrate includes a silicon oxide film having a thickness of 650 nm.
4. The cantilever-type near-field probe as claimed in claim 1 , wherein the oxide film includes an aluminum metal film.
5. A cantilever-type near-field probe for a head of an optical data storage, the cantilever-type near-field probe comprising:
a silicon substrate with a through-hole passing through upper and lower portions thereof;
a dielectric film formed on a bottom portion of the silicon substrate as a mask layer;
an oxide film deposited in a parabolic shape on the upper portion of the silicon substrate, and having an aperture formed in a vertex of the oxide film and communicating with the through-hole of the silicon substrate; and
a metal film deposited on an upper portion of the oxide film, and having a near-field aperture communicating with the aperture of the oxide film and having a high throughput;
wherein the oxide film deposited in a parabolic shape on the upper portion of the silicon substrate includes a silicon oxide film having a thickness of about 650 nm.
6. A cantilever-type near-field probe for a head of an optical data storage; the cantilever-type near-field probe comprising:
a silicon substrate with a through-hole passing through upper and lower portions thereof;
a dielectric film formed on a bottom portion of the silicon substrate as a mask layer;
an oxide film deposited in a parabolic shape on the upper portion of the silicon substrate, and having an aperture formed in a vertex of the oxide film and communicating with the through-hole of the silicon substrate; and
a metal film deposited on an upper portion of the oxide film, and having a near-field aperture communicating with the aperture of the oxide film and having a high throughput;
wherein the dielectric film formed on the bottom portion of the silicon substrate as the mask layer includes a silicon nitride film having a thickness of about 300 nm.