Semiconductor HBT MMIC device and semiconductor module
View Patent ↗The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
1. A semiconductor device comprising:
a semiconductor substrate;
a semiconductor component which is present on a first surface of the semiconductor substrate;
a first opening which extends between the first surface and a second surface of the semiconductor substrate and located so as to face the semiconductor component wherein the second surface is opposite to the first surface;
a first conductor layer with which the first opening is filled; and
second conductor layers which are present on the second surface of the semiconductor substrate and located where the first opening and the first conductor layer are not present;
wherein at least the first conductor layer is electrically connected to the semiconductor component which is present on the first surface,
wherein the first opening is also filled with a third conductive layer such that the third conductive layer is formed across a face of the first opening adjacent the first surface of the substrate such that a first surface of the third conductive layer faces the semiconductor component, wherein the third conductive layer also extends along sidewalls of the first opening between the first and second surfaces of the substrate, wherein the first conductor layer is formed on a second surface of the third conductor layer, which second surface is opposite to said first surface, so as to completely cover the portions of the third conductor layer formed within the first opening, including portions of the third conductor layer formed on the sidewalls of the first opening, and wherein the first conductor layer and the third conductor layer completely fill the first opening between the first and second surfaces of the substrate.
2. A semiconductor device according to claim 1 wherein each of the first and second conductor layers is made of two or more kinds of metal films.
3. A semiconductor device according to claim 1 wherein the first conductor layer protrudes from the first opening from the second surface of the semiconductor substrate to form a bump for electrical contact.