Semiconductor memory device, refresh control method thereof, and test method thereof
View Patent ↗The present invention provides a semiconductor memory device which reduces current consumption in a standby state owing to a suitable refresh-thinning-out function, and a refresh control method thereof. When the refresh-thinning-out function is added while a refresh operation and an external access operation are being executed independently of each other, a refresh address counter outputs a refresh address Add(C) and inputs predetermined high-order bits thereof to a refresh-thinning-out control as a high-order refresh address Add(C) (m), where judgment as to whether the refresh operation is performed, is made. A refresh permission signal RFEN corresponding to the result of judgment is inputted to a word driver to activate and control the word driver. The process of judgment by the refresh-thinning-out control circuit can be embedded in an access time of a row system.
1. A semiconductor memory device for sequentially selecting target word lines according to refresh request signals to thereby perform refresh operations, comprising:
a refresh-thinning-out controller section for judging whether or not the refresh operation should be executed according to each of the refresh request signals to select a refresh cycle suitable for data-holding characteristics of a memory cell connected to each of the word lines; and
a switching section for switching an active state of the refresh-thinning-out controller section under predetermined conditions;
wherein when the refresh-thinning-out controller section is defunctionalized, the switching section deactivates the refresh-thinning-out controller section.
2. The semiconductor memory device according to claim 1 , wherein the switching section includes a timer section for timing a predetermined time, and the active state of the refresh-thinning-out controller section is switched for each predetermined time.
3. The semiconductor memory device according to claim 2 , wherein the timer section includes a counter section for counting the number of occurrences of the refresh request signals.