Method for manufacturing perpendicular magnetic recording medium
View Patent ↗Embodiments of the invention provide a manufacturing method which permits a high quality perpendicular magnetic recording medium to be manufactured with a high yield by preventing abnormal discharge which sputters particles from the target. In one embodiment, while the perpendicular magnetic recording medium is formed, DC pulses are applied to the target. During the reversal period (Reversal Time) between sputtering periods, a voltage of the opposite polarity is applied. During the sputtering period, a negative voltage is applied which biases the target surface to a negative potential, causing Ar+ to collide with and sputter CoCrPt and SiO 2 for deposition on the intermediate layer. The top surface of the insulation material (SiO 2 ) on the target is charged by Ar+ to have a voltage larger than the target voltage. However, arcing can be prevented since the charge on the surface of the insulation material is neutralized due to a positive voltage applied to the target during the non-sputtering period.
1. A method for manufacturing a perpendicular magnetic recording medium, comprising:
preparing a substrate;
forming an adhesion layer, a magnetic domain pinning layer, a soft magnetic under layer and an intermediate layer on the substrate;
forming a perpendicular magnetic recording layer on the intermediate layer by performing DC pulse sputtering, wherein a negative voltage is applied to a target made of magnetic material mixed with insulation material during a sputtering period and a positive voltage is applied to the target during a non-sputtering period, the negative voltage causing Ar+ to collide with and sputter the magnetic material and the insulation material for deposition on the intermediate layer;
forming a protective layer on the perpendicular magnetic recording layer; and
forming a lubricant layer on the protective layer.
2. A method for manufacturing a perpendicular magnetic recording medium according to claim 1 , wherein the DC pulse sputtering is such that the DC pulse frequency is about 20 kHz to 150 kHz.
3. A method for manufacturing a perpendicular magnetic recording medium according to claim 1 , wherein the DC pulse sputtering is such that the positive voltage applied to the target during the non-sputtering period is about +15 V to +70 V.
4. A method for manufacturing a perpendicular magnetic recording medium according to claim 1 , wherein the target is made of CoCrPt alloy mixed with SiO 2 .
5. A method for manufacturing a perpendicular magnetic recording medium according to claim 1 , wherein the substrate is a glass substrate, a ceramic substrate or an aluminum substrate plated with NiP.
6. A method for manufacturing a perpendicular magnetic recording medium according to claim 1 , wherein the adhesion layer, the magnetic domain pinning layer, the soft magnetic under layer and the intermediate layer are formed by DC sputtering.
7. A method for manufacturing a perpendicular magnetic recording medium according to claim 1 , wherein the magnetic domain pinning layer is formed by laminating a crystallographic orientation control layer, an anti-ferromagnetic layer and a magnetic domain pinning enhance layer in order.
8. A method for manufacturing a perpendicular magnetic recording medium according to claim 1 , wherein the soft magnetic under layer is formed by laminating a high saturation magnetic flux density layer, a nonmagnetic layer and a high saturation magnetic flux density layer.
9. A method for manufacturing a perpendicular magnetic recording medium according to claim 1 , wherein the intermediate layer is formed by laminating a precoat layer and a crystallographic orientation control layer.
10. A method for manufacturing a perpendicular magnetic recording medium, comprising:
preparing a substrate;
forming an adhesion layer, a magnetic domain pinning layer, a soft magnetic under layer and an intermediate layer on the substrate;
forming a perpendicular magnetic recording layer on the intermediate layer by performing DC pulse sputtering, wherein a bias voltage is applied to the substrate, a negative voltage is applied to a target made of magnetic material mixed with insulation material during a sputtering period and a positive voltage is applied to the target during a non-sputtering period; the negative voltage causing Ar+ to collide with and sputter the magnetic material and the insulation material for deposition on the intermediate layer;
forming a protective layer on the perpendicular magnetic recording layer; and
forming a lubricant layer on the protective layer.
11. A method for manufacturing a perpendicular magnetic recording medium according to claim 10 , wherein the DC pulse sputtering is such that the DC pulse frequency is about 20 kHz to 150 kHz.
12. A method for manufacturing a perpendicular magnetic recording medium according to claim 10 , wherein the DC pulse sputtering is such that the positive voltage applied to the target during the non-sputtering period is about +15 V to +70 V.
13. A method for manufacturing a perpendicular magnetic recording medium according to claim 10 , wherein the target is made of CoCrPt alloy mixed with SiO 2 .
14. A method for manufacturing a perpendicular magnetic recording medium according to claim 10 , wherein the substrate is a glass substrate, a ceramic substrate or an aluminum substrate plated with NiP.
15. A method for manufacturing a perpendicular magnetic recording medium according to claim 10 , wherein the adhesion layer, the magnetic domain pinning layer, the soft magnetic under layer and the intermediate layer are formed by DC sputtering.
16. A method for manufacturing a perpendicular magnetic recording medium according to claim 10 , wherein the magnetic domain pinning layer is formed by laminating a crystallographic orientation control layer, an anti-ferromagnetic layer and a magnetic domain pinning enhance layer in order.
17. A method for manufacturing a perpendicular magnetic recording medium according to claim 10 , wherein the soft magnetic under layer is formed by laminating a high saturation magnetic flux density layer, a nonmagnetic layer and a high saturation magnetic flux density layer.
18. A method for manufacturing a perpendicular magnetic recording medium according to claim 10 , wherein the intermediate layer is formed by laminating a precoat layer and a crystallographic orientation control layer.
19. A method for manufacturing a perpendicular magnetic recording medium according to claim 1 ,
wherein the DC pulse sputtering is such that the positive voltage applied to the target during the non-sputtering period is about +15 V to +70 V,
wherein the target is made of CoCrPt alloy mixed with SiO 2 ,
wherein the magnetic domain pinning layer is formed by laminating a crystallographic orientation control layer, an anti-ferromagnetic layer and a magnetic domain pinning enhance layer in order,
wherein the soft magnetic under layer is formed by laminating a high saturation magnetic flux density layer, a nonmagnetic layer and a high saturation magnetic flux density layer, and
wherein the intermediate layer is formed by laminating a precoat layer and a crystallographic orientation control layer.
20. A method for manufacturing a perpendicular magnetic recording medium according to claim 10 ,
wherein the DC pulse sputtering is such that the positive voltage applied to the target during the non-sputtering period is about +15 V to +70 V,
wherein the target is made of CoCrPt alloy mixed with SiO 2 ,
wherein the magnetic domain pinning layer is formed by laminating a crystallographic orientation control layer, an anti-ferromagnetic layer and a magnetic domain pinning enhance layer in order,
wherein the soft magnetic under layer is formed by laminating a high saturation magnetic flux density layer, a nonmagnetic layer and a high saturation magnetic flux density layer, and
wherein the intermediate layer is formed by laminating a precoat layer and a crystallographic orientation control layer.