Solid-state imaging device
View Patent ↗A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.
1. A solid-state imaging device comprising:
a plurality of pixels, each pixel including a photoelectric conversion section configured to convert light incident on a first surface of a substrate into signal charges;
a multilayer structure including a wiring structure, the multilayer structure being disposed at a second surface of the substrate, the second surface of the substrate being opposite to the first surface; and
a transmission-preventing film disposed between the wiring structure and the substrate, the transmission-preventing film including a dummy wiring layer,
wherein the dummy wiring layer is closer to the photoelectric conversion section than to the wiring structure.
2. The solid-state imaging device according to claim 1 , wherein each pixel further includes a circuit region configured to read signal charges accumulated by the photoelectric conversion section.
3. The solid-state imaging device according to claim 2 , wherein the circuit region includes
an amplifier transistor for amplifying and outputting pixel signals corresponding to the amount of accumulated charges in the photoelectric conversion section.
4. The solid-state imaging device according to claim 3 , wherein the circuit region further includes
a selection transistor for selecting a pixel from which signal charges are read.
5. The solid-state imaging device according to claim 4 , wherein the circuit region further includes
a reset transistor for resetting charges accumulated in the photoelectric conversion section.
6. The solid-state imaging device according to claim 2 , wherein the circuit region includes
a transfer transistor for selecting the timing of transfer of signal charges accumulated in the photoelectric conversion section to the amplifier transistor.
7. The solid-state imaging device according to claim 6 ,
wherein the transfer transistor is positioned adjacent to the photoelectric conversion section.
8. The solid-state imaging device according to claim 7 ,
wherein the transfer transistor includes a gate electrode disposed on the substrate with a gate insulating film between the gate electrode and the substrate.
9. The solid-state imaging device according to claim 8 ,
wherein the gate electrode is disposed between at least one of the wiring layers of the wiring structure and the substrate.
10. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion section includes
an n-type layer which accumulates electrons serving as signal charges, and
a p-type layer which is provided in a surface region of the n-type layer and which accumulates holes.
11. The solid-state imaging device according to claim 1 , wherein the dummy wiring layer film includes a silicide film.
12. The solid-state imaging device according to claim 1 , wherein the dummy wiring layer film includes a light-shielding metal film.
13. The solid-state imaging device according to claim 1 , wherein the light-shielding metal film is formed in a pattern corresponding to light-receiving regions of the photoelectric conversion sections.
14. The solid-state imaging device according to claim 1 , wherein the multilayer structure further includes an insulating film.
15. The solid-state imaging device according to claim 1 , wherein the wiring structure includes a plurality of wiring layers.
16. The solid-state imaging device according to claim 1 , wherein the dummy wiring for every pixel generating an image signal for the imaging device is at a same level.
17. The solid-state imaging device according to claim 1 , wherein an optical distance from the photoelectric conversion section to the dummy wiring for each pixel is independent of any wavelength consideration.
18. The solid-state imaging device according to claim 1 , wherein within solid-state imaging device, the dummy wiring layer is located at locations corresponding to the photoelectric conversion sections.
19. The solid-state imaging device according to claim 1 , wherein the transmission-preventing film is a reflection film.