Method and system for chemical mechanical polishing pad cleaning

1. A method for cleaning a chemical mechanical polishing (CMP) pad after performing a CMP operation on a wafer, the CMP pad having a residue on a surface of the CMP pad, the method comprising:

applying chemicals onto the surface of the CMP pad;

rinsing the pad surface to substantially remove by-product produced by the chemicals; and

performing a mechanical conditioning operation on the surface of the pad,

wherein during the CMP operation the wafer surface includes copper and oxide

wherein when the wafer surface contains more copper than the oxide, the chemicals are selected from one or a combination of:

(a) ammonium chloride (NH 4 Cl)+copper chloride (CuCl 2 )+hydrochloric acid (HCl);

(b) ammonium persulfate ((NH 4 ) 2 S 2 O 8 )+sulfuric acid (H 2 SO 4 );

(c) CuCl 2 +NH 4 Cl+ammonium hydroxide (NH 4 OH);

(d) citric acid (C 6 H 8 O 7 );

(e) NH 4 OH;

(f) ammonium citrate ((NH 4 ) 2 HC 6 H 5 O 7 );

(g) HCl;

(h) hydrofluoric acid (HF);

(i) Tetramethylammonium hydroxide (TMAH);

(j) SCl;

(k) chelating agents; and

(l) surfactants.

2. A method as recited in claim 1 , wherein performing the mechanical conditioning operation includes using a conditioner disk having a nickel-plated diamond grid surface or a nylon brush surface.

3. A method for cleaning a chemical mechanical polishing (CMP) pad after performing a CMP operation on a wafer, the CMP pad having a residue on a surface of the CMP pad, the method comprising:

applying chemicals onto the surface of the CMP pad;

rinsing the pad surface to substantially remove by-product produced by the chemicals; and

performing a mechanical conditioning operation on the surface of the pad,

wherein during the CMP operation the wafer surface includes copper and oxide

wherein when the wafer surface contains more oxide than the copper, the chemicals are selected from one or a combination of:

(m) NH 4 OH+hydrogen peroxide (H 2 O 2 )+deionized water (DIW);

(n) NH 4 OH;

(o) C 6 H 8 O 7 ;

(p) (NH 4 ) 2 HC 6 H 5 O 7 ;

(q) HCl;

(r) HF;

(s) TMAH;

(t) chelating agents; and

(u) surfactants.

4. A method of cleaning a chemical mechanical polishing (CMP) pad, the CMP pad having a residue on a surface of the CMP pad as a result of performing a CMP operation on the surface of a substrate, the surface of the substrate including substantially all copper at a beginning of the CMP operation and a combination of oxide and copper near a completion of the CMP operation after a portion of the copper is removed using the CMP operation, the method comprising:

applying chemicals onto the surface of the CMP pad; and

rinsing the pad surface to substantially remove the applied chemicals and the residue,

wherein when the surface of the substrate includes more copper than oxide during the CMP operation, the chemicals are selected from one or a combination of:

(a) NH 4 Cl+CuCl 2 +HCl;

(b) (NH 4 ) 2 S 2 O 8 +H 2 SO 4 ;

(c) CuCl 2 +NF 4 Cl+NH 4 OH;

(d) C 6 H 8 O 7 ;

(e) NH 4 OH;

(f) (NH 4 ) 2 HC 6 H 5 O 7 ;

(g) HCl;

(h) HF;

(i) TMAH;

(j) SCl;

(k) chelating agents; and

(l) surfactants; and

wherein when the surface of the substrate is more oxide than copper, the chemicals are selected from one or a combination of:

(m) NH 4 OH+hydrogen peroxide (H 2 O 2 )+deionized water (DIW);

(n) NH 4 OH;

(o) C 6 H 8 O 7 ;

(p) (NH 4 ) 2 HC 6 H 5 O 7 ;

(q) HCl;

(r) HF;

(s) TMAH;

(t) chelating agents; and

(u) surfactants.

5. A method as recited in claim 4 , further comprising:

performing a mechanical conditioning operation on the surface of the pad.