Semiconductor fabrication device heater and heating device equipped with the same
A heating body and a device equipped with the same provide greater uniformity in temperature distribution between the start of heating and the end of cooling. A semiconductor fabrication device heating body includes a base having a heating surface upon which an object is mounted or positioned at a fixed distance away and is heated, and a resistance heating body. All or part of the base of the heating body has a thermal capacity per unit volume of at least 2.0 J/K·cm 3 and a thermal conductivity of at least 50 W/mK.
1 . A semiconductor fabrication device heater, comprising:
a base formed with a heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance; and a resistance heating body, wherein all or part of said base of said heater is formed from a material with a heat capacity per unit volume of at least 2.0 J/K·cm 3 and a thermal conductivity of at least 50 W/mK.
2 . A semiconductor fabrication device heater according to claim 1 wherein said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is formed from a metal or an alloy or a composite body of metal and ceramics, on the back surface thereof being attached a metal or alloy film serving as a resistance heating body.
3 . A semiconductor fabrication device heater according to claim 1 comprising:
a second base disposed on a back surface of said base.
4 . A semiconductor fabrication device heater according to claim 3 wherein:
said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is formed from a metal or an alloy or a composite body of metal and ceramics;
said second base disposed on a back surface of said base is formed from a metal or an alloy or a composite body of metal and ceramics; and
a metal or alloy foil is interposed between said bases to serve as a resistance heating body.
5 . A semiconductor fabrication device heater according to claim 3 wherein:
said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is formed from a metal or an alloy or a composite body of metal and ceramics;
said second base disposed on a back surface of said base is formed from ceramics; and
a metal or alloy foil is interposed between said bases to serve as a resistance heating body.
6 . A semiconductor fabrication device heater according to claim 3 wherein:
said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is formed from a metal or an alloy or a composite body of metal and ceramics;
said second base disposed on a back surface of said base is formed from ceramics; and
a circuit serving as a resistance heating body is formed on said ceramics.
7 . A semiconductor fabrication device heater according to claim 3 wherein:
a ratio (a/(a+b)) of a thickness a of said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance and a thickness b of said second base disposed on a back surface of said base is at least 0.05 and no more than 0.95.
8 . A semiconductor fabrication device heater according to claim 1 wherein a temperature detector of a temperature sensor for detecting a temperature of said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is disposed between said heating surface and said resistance heating body and is positioned no more than 5 mm from said resistance heating body.
9 . A semiconductor fabrication device heater according to claim 1 wherein an emissivity of said heating surface of said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is at least 0.5.
10 . A semiconductor fabrication device heater according to claim 9 wherein an emissivity of said heating surface of said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is at least 0.8.
11 . A semiconductor fabrication device heater according to claim 1 wherein a flatness of said heating surface of said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is no more than 0.1 mm.
12 . A semiconductor fabrication device heater according to claim 11 wherein a flatness of said heating surface of said base formed with the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is no more than 0.05 mm.
13 . A semiconductor fabrication device heater according to claim 1 wherein a flatness of said back surface of said heating surface of said base formed with a the heating surface for heating an object to be processed by mounting said object or by heating from a fixed distance is no more than 0.1 mm.
14 . A semiconductor fabrication device heater according to claim 3 wherein a flatness of said second base disposed on said back surface is no more than 0.1 mm.
15 . A semiconductor fabrication device heater according to claim 1 wherein a ratio (c/(c+d)) between a heat generation density c (W/cm 2 ) of a region with a radius ½ that of said heater from a center of said heater and a heat generation density d (W/cm 2 ) of a region outward therefrom is at least 0.05 and no more than 0.49.
16 . A semiconductor fabrication device heater according to claim 2 wherein said metal or alloy is at least one metal or alloy selected from a list consisting of copper (Cu), nickel (Ni), iron (Fe), cobalt (Co), palladium (Pd), and aluminum (Al).
17 . A semiconductor fabrication device heater according to claim 2 wherein said composite body of metal and ceramics is at least one composite body selected from a list consisting of a composite body of silicon and silicon carbide, a composite body of aluminum and silicon carbide, and a composite body of aluminum and aluminum nitride.
18 . A semiconductor fabrication device heater according to claim 5 wherein said ceramics is at least one type of ceramics selected from a list consisting of aluminum nitride (AlN), silicon carbide (SiC), and aluminum oxide (Al 2 O 3 ).
19 . A semiconductor fabrication device heater according to claim 1 wherein a material with a high emissivity covers said heating surface.
20 . A semiconductor fabrication device heater according to claim 19 wherein said cover material is a ceramics.
21 . A semiconductor fabrication device heater according to claim 20 wherein said ceramics is at least one type of ceramics selected from a list consisting of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), silicon carbide (SiC), and carbon (C).
22 . A semiconductor fabrication device heater according to claim 19 wherein said cover material is heat-resistant resin.
23 . A semiconductor fabrication device heater according to claim 22 wherein said heat-resistant resin is polyimide, fluoroplastic, silicon resin, or epoxy resin.
24 . A semiconductor fabrication device heater according to claim 1 wherein a component of said resistance heating body is at least one selected from a list consisting of tungsten (W), molybdenum (Mo), nickel (Ni), chrome (Cr), silver (Ag), palladium (Pd), platinum (Pt), and stainless steel (SUS).
25 . A semiconductor fabrication device equipped with a semiconductor fabrication device heater according to claim 1.