Active input load wide bandwidth low noise HEMT amplifier
View Patent ↗A relatively wide bandwidth low noise amplifier with an active input matching network. The active load maybe formed from a field effect transistor (FET) or high electron mobility transistor (HEMT) in a common gate configuration. The active load input matching network has a lower overall noise component to only transistor channel noise than reactive matching components, such as inductors and capacitors. By utilizing the active mode input matching network in accordance with the present invention, the circuit layout such amplifiers can be reduces significantly, for example, 23 mils×47 mils.
1. A wide band low noise amplifier comprising:
a first high electron mobility transistor (HEMT), having a first gate, first source and first drain terminals connected in a common source configuration, said first gate defining an input port and said first drain defining an output port;
a DC bias source ; and
an active impedance circuit for providing input impedance matching of said first HEMT, said active impedance circuit including a second HEMT with second gate, second drain and second source terminals, said second HEMT configured in a common gate configuration and said second drain and said second source coupled between said first gate terminal and said DC bias source.
2. The wide band low-noise amplifier as recited in claim 1 , wherein said active impedance circuit includes a second HEMT.
3. The wide band low noise amplifier as recited in claim 1 , wherein said active impedance circuit includes a second HEMT with second gate, drain and source terminal and is configured with a common gate.
4. The wide band low noise amplifier as recited in claim 1 , wherein said active impedance circuit includes a second HEMT, with second gate, drain and source terminal and is configured with a common gate; and
a first resistance serially coupled to said second drain terminal.
5. The wide band low noise amplifier as recited in claim 1 , wherein said active impedance circuit includes
a first resistance serially coupled to said second drain terminal, wherein said first resistance that is electrically coupled to said output port.
6. The wide band low noise amplifier as recited in claim 1 , wherein said active impedance circuit includes
a first resistance serially coupled to said second drain terminal and said first resistance is electrically coupled to said output port and wherein said second source terminal is coupled to said first gate terminal.
7. A wide band low noise amplifier comprising:
a first high electron mobility transistor (HEMT), having first gate source and drain terminals configured as a common source;
an active impedance circuit for providing input impedance matching of said first HEMT;
an input port coupled to said first gate terminal of said first HEMT; and
an output port coupled to said first drain terminal of said HEMT, wherein said active impedance circuit includes a second HEMT with second gate, drain and source terminals and is configured with a common gate and further including;
a first resistance that is electrically coupled to said output port and wherein said second source terminal is coupled to said first gate terminal and wherein a DC bias source is electrically coupled to said first resistance.
8. A wide band low noise amplifier comprising:
a first high electron mobility transistor (HEMT), having first gate source and drain terminals configured as a common source;
an active impedance circuit for providing input impedance matching of said first HEMT;
an input port coupled to said first gate terminal of said first HEMT; and
an output port coupled to said first drain terminal of said HEMT, wherein said active impedance circuit includes a second HEMT with second gate, drain and source terminals and is configured with a common gate and further including:
a first resistance serially coupled to said second drain terminal, wherein said first resistance is also electrically coupled to said output port, and wherein second source terminal is coupled to said first gate terminal; and
a DC bias source electrically coupled to said first resistance, further including a passive impedance matching network.
9. A wide band low noise amplifier comprising:
a first high electron mobility transistor (HEMT), having first gate source and drain terminals configured as a common source;
an active impedance circuit for providing input impedance matching of said first HEMT;
an input port coupled to said first gate terminal of said first HEMT; and
an output port coupled to said first drain terminal of said HEMT, wherein said active impedance circuit includes a second HEMT with second gate, drain and source terminals and is configured with a common gate and further including;
a first resistance serially coupled to said second drain terminal, wherein said first resistance is also electrically coupled to said output port and wherein second source terminal is coupled to said first gate terminal;
a DC bias source electrically coupled to said first resistance; and
a passive impedance matching network, wherein said passive impedance matching network includes one or more passive impedance devices electrically coupled to said first source terminal.
10. A wide band low noise amplifier comprising:
a first high electron mobility transistor (HEMT), having first gate source and drain terminals configured as a common source;
an active impedance circuit for providing input impedance matching of said first HEMT;
an input port coupled to said first gate terminal of said first HEMT; and
an output port coupled to said first drain terminal of said HEMT, wherein said active impedance circuit includes a second HEMT with second gate, drain and source terminal and is configured with a common gate and further including;
a first resistance serially coupled to said second drain terminal, wherein said first resistance is also electrically coupled to said output port and wherein second source terminal is coupled to said first gate terminal;
a DC bias source electrically coupled to said first resistance;
a passive impedance matching network, wherein said passive impedance matching network includes one or more passive impedance devices electrically coupled to said first source terminal and wherein said one or more passive impedance devices include a second resistance and a first capacitance.
11. A wide band low noise amplifier comprising:
a first high electron mobility transistor (HEMT), having first gate source and drain terminals configured as a common source;
an active impedance circuit for providing input impedance matching of said first HEMT;
an input port coupled to said first gate terminal of said first HEMT; and
an output port coupled to said first drain terminal of said HEMT, wherein said active impedance circuit includes a second HEMT with second gate, drain and source terminals and is configured with a common gate and further including;
a first resistance serially coupled to said second drain terminal, wherein said active impedance network includes a second HEMT with second gate, drain and source terminals and is configured with a common gate, wherein said first resistance is also electrically coupled to said output port and wherein second source terminal is coupled to said first gate terminal;
a DC bias source electrically coupled to said first resistance;
a passive impedance matching network, wherein said passive impedance matching network includes one or more passive impedance devices electrically coupled to said first source terminal, wherein said one or more passive impedance devices include a second resistance and a first capacitance, wherein said second resistance and said first capacitance are coupled in parallel between said first source terminal and ground.