Sacrificial substrate for etching
View Patent ↗A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate to a sacrificial silicon substrate. The first silicon substrate is etched. A pressure is applied at an interface of the first silicon substrate and the sacrificial silicon substrate to cause the first silicon substrate to separate from the sacrificial silicon substrate. An apparatus having metal blades can be used to separate the substrates.
1. A method of etching a silicon substrate, comprising:
bonding a first silicon substrate to a sacrificial silicon substrate;
after bonding, etching the first silicon substrate from an exposed surface of the first silicon substrate through the first silicon substrate and into a flat surface of the sacrificial silicon substrate that is adjacent to the first silicon substrate; and
applying a pressure at an interface of the first silicon substrate and the sacrificial silicon substrate to cause the first silicon substrate to separate from the sacrificial silicon substrate, wherein applying the pressure at the interface continues until the first silicon substrate is completely separated from the sacrificial substrate.
2. The method of claim 1 , wherein bonding the first silicon substrate to the sacrificial silicon substrate creates Van der Waals bonds between the first silicon substrate and the sacrificial silicon substrate.
3. The method of claim 1 , wherein etching the first silicon substrate includes a deep reactive ion etch.
4. The method of claim 1 , wherein bonding a first silicon substrate to a sacrificial silicon substrate occurs at room temperature.
5. The method of claim 1 , wherein etching includes etching into the sacrificial substrate.
6. The method of claim 1 , further comprising etching the first silicon substrate before bonding the first silicon substrate to the sacrificial silicon substrate.
7. The method of claim 1 , wherein the first silicon substrate and the sacrificial silicon substrate each include opposed flat surfaces and a thin edge and applying a pressure at an interface includes applying pressure parallel to the flat surfaces.
8. The method of claim 7 , wherein applying a pressure at the interface includes pressing a sharp edge against the thin edge.
9. The method of claim 1 , wherein applying a pressure includes pressing a plurality of sharp edges of a plurality of separating members inwardly.
10. The method of claim 9 , wherein pressing the plurality of sharp edges includes pressing with six or eight separating members.
11. The method of claim 9 , wherein the plurality of the separating members are spaced at equal angular intervals around the first silicon substrate and the sacrificial silicon substrate.
12. The method of claim 1 , wherein applying a pressure at the interface of the first silicon substrate and the sacrificial silicon substrate includes pressing a member having a sharp edge at the interface.
13. The method of claim 12 , wherein the member comprises a metal blade having the sharp edge.
14. The method of claim 12 , wherein applying a pressure includes sliding the sharp edge between the first silicon substrate and the sacrificial silicon substrate.
15. The method of claim 12 , wherein the interface defines a plane and the pressure is applied parallel to the plane.
16. The method of claim 15 , wherein applying a pressure includes moving the member having the sharp edge toward a center of the interface.
17. The method of claim 16 , further comprising sensing pressure applied by the member.
18. The method of claim 17 , further comprising halting motion of the member toward the center of the interface if the sensed pressure exceeds a threshold.
19. The method of claim 16 , further comprising preventing the sharp edge from moving beyond a predetermined location.