Ferroelectric element and method for manufacturing the same
View Patent ↗In a ferroelectric element, the ferroelectric film is prevented from deteriorating and the interconnect film from lowering in reliability. A ferroelectric element includes a first electrode, a ferroelectric film formed on the first electrode, a second electrode formed on the ferroelectric film, a first hydrogen blocking film formed directly on a surface of the second electrode, a first insulation film formed on the first hydrogen blocking film, a first opening formed in the first hydrogen blocking film exposing a part of the second electrode, a second opening formed in the first insulation film and having a greater diameter than the diameter of the first opening, and an interconnect film connected to the second electrode through the first and second openings.
1. A method for manufacturing a ferroelectric element comprising:
a step of forming a first electrode, a ferroelectric film, and a second electrode, in order;
a step of forming a first hydrogen blocking film directly on a surface of the second electrode;
a step of forming a first insulation film on the first hydrogen blocking film;
a step of forming a first opening exposing a part of the second electrode in the first hydrogen blocking film;
a step of forming a second opening in the first insulation film such that a diameter of the first opening is smaller than a diameter of the second opening; and
a step of forming an interconnect film connected to the second electrode through the first opening and the second opening.
2. A method of manufacturing a ferroelectric element comprising:
forming a first electrode, a ferroelectric film and a second electrode in sequence;
forming a hydrogen blocking film directly on the second electrode;
forming a first opening in the hydrogen blocking film to expose a surface of the second electrode;
forming an insulating layer on the hydrogen blocking film and in the first opening;
forming a second opening in the insulating layer using the hydrogen blocking film as an etch stop, the insulating layer being removed within the first opening to expose the surface of the second electrode during said forming a second opening, and a diameter of the second opening being greater than a diameter of the first opening; and
forming an interconnect film connected to the second electrode through the first and second openings.