Surface-emitting laser diode with tunnel junction and fabrication method thereof
View Patent ↗A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.
1. A surface emitting semiconductor laser diode of a tunnel junction type comprising:
a semiconductor substrate;
a first reflector;
a second reflector;
an active region disposed in series between the first and second reflectors; and
a tunnel junction region disposed in series between the first and second reflectors,
wherein the tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.
2. The surface emitting semiconductor laser diode of a tunnel junction type according to claim 1 , wherein the supper-lattice layer having aluminum has a multi-film structure, in which at least a set of AlAs layer and InAs layer are alternately laminated.
3. The surface emitting semiconductor laser diode of a tunnel junction type according to claim 1 , wherein the first semiconductor layer further includes a high impurity concentration layer in which impurities of the first conductive type are highly doped.
4. The surface emitting semiconductor laser diode of a tunnel junction type according to claim 3 , wherein the high impurity concentration layer includes an AlInAs layer.
5. The surface emitting semiconductor laser diode of a tunnel junction type according to claim 1 , wherein the active region has a quantum well structure that includes an active layer composed of at least In, Ga, As, and P.
6. The surface emitting semiconductor laser diode of a tunnel junction type according to claim 1 , wherein:
the first reflector includes either semiconductor multiple films or dielectric multiple films; and
the second reflector includes either the semiconductor multiple films or the dielectric multiple films.
7. The surface emitting semiconductor laser diode of a tunnel junction type according to claim 6 , wherein at least one of the first and second reflectors is composed of GaAs-based semiconductor multiple films.
8. The surface emitting semiconductor laser diode of a tunnel junction type according to claim 1 , further comprising a post arranged on the substrate,
wherein the super-lattice layer having aluminum is formed in the post, and the super-lattice layer has an oxidation region that is selectively oxidized from an exposed side face thereof.
9. The surface emitting semiconductor laser diode of a tunnel junction type according to claim 8 , further comprising:
a first electrode provided on a top of the post; and
a second electrode provided on a bottom of the post,
wherein voltages applied onto the first and second electrodes generate a tunneling current in the tunnel junction region.
10. A module having a surface emitting semiconductor laser diode of a tunnel junction type comprising:
a semiconductor substrate;
a first reflector;
a second reflector;
an active region disposed in series between the first and second reflectors; and
a tunnel junction region disposed in series between the first and second reflectors,
wherein the tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.
11. An optical transmission apparatus comprising:
a module; and
a transmission device that transmits a laser beam emitted from the module,
the module having a surface emitting semiconductor laser diode of a tunnel junction type that includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors,
wherein the tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.
12. A free space optical transmission apparatus comprising:
a module; and
a transmission device that transmits spatially a laser beam emitted from the module,
the module having a surface emitting semiconductor laser diode of a tunnel junction type that includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors,
wherein the tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.
13. An optical transmission system comprising:
a module; and
a transmission device that transmits a laser beam emitted from the module,
the module having a surface emitting semiconductor laser diode of a tunnel junction type that includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors,
wherein the tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.
14. A free space optical transmission system comprising:
a module; and
a transmission device that transmits spatially a laser beam emitted from the module,
the module having a surface emitting semiconductor laser diode of a tunnel junction type that includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors,
wherein the tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.