IP Library Granted Patent US 7,518,647
Granted Patent B2
US 7,518,647 · App. 11/260,900 · Granted Apr 14, 2009

Image sensor for removing horizontal noise

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Quick Facts
Patent No.
US 7,518,647
App. No.
11/260,900
Granted
Apr 14, 2009
Kind
B2
Abstract

Disclosed herein is an image sensor for removing a horizontal noise. The image sensor includes a pixel array including a plurality of unit pixels located at every row or column; an analog bus located at every row or column, for transferring output signals of the pixel array; and a readout circuit for reading the output signals of the pixel array loaded on the analog bus, wherein the readout circuit includes: a plurality of first transistors having a drain connected to the column analog bus and a source connected to a supply voltage; and a second transistor having a drain connected to a gate of the second transistor and gates of the first transistors, and a source connected to the supply voltage, wherein, a size of the second transistor is larger than a size of the first transistor.

Claims (12)

1. An image sensor, comprising:

a pixel array including a plurality of unit pixels located at every row or column;

an analog bus located at every row or column for transferring output signals of the pixel array; and

a readout circuit for reading the output signals of the pixel array loaded on the analog bus,

wherein the readout circuit includes:

a plurality of first transistors having a drain connected to the column analog bus and a source connected to a supply voltage; and

a second transistor having a drain connected to a gate of the second transistor and gates of the first transistors, and a source connected to the supply voltage,

wherein a size of the second transistor is larger than a size of each of the first transistors, and a current amount flowing through the second transistor is larger than a current amount flowing through the first transistors.

2. The image sensor as recited in claim 1 , wherein the first transistors are located at every row and the second transistor forms current mirrors with the first transistors.

3. The image sensor as recited in claim 1 , wherein the first transistors are located at every column and the second transistor forms current mirrors with the first transistors.

4. The image sensor as recited in claim 1 , wherein the first transistors and the second transistor are NMOS transistor.

5. The image sensor as recited in claim 1 , wherein the supply voltage is a ground voltage.

Assignments (6)
MERGER Recorded Jul 22, 2011
From: CROSSTEK CAPITAL, LLC
To: INTELLECTUAL VENTURES II LLC
Reel/Frame 026637/0632 →
PARTIAL RELEASE OF SECURITY INTEREST Recorded Aug 10, 2009
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL TRUSTEE
To: MAGNACHIP SEMICONDUCTOR, LTD.
Reel/Frame 023075/0054 →
CONFIRMATORY ASSIGNMENT Recorded Jun 17, 2009
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: CROSSTEK CAPITAL, LLC
Reel/Frame 022824/0935 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 30, 2009
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: CROSSTEK CAPITAL, LLC
Reel/Frame 022764/0270 →
AFTER-ACQUIRED INTELLECTUAL PROPERTY KUN-PLEDGE AGREEMENT Recorded Feb 18, 2009
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL TRUSTEE
Reel/Frame 022277/0133 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 30, 2006
From: KIM, YOUNG-JIN; KIM, NAM-RYEOL
To: MAGNACHIP SEMICONDUCTOR, LTD.
Reel/Frame 017482/0249 →