Technique for improving negative potential immunity of an integrated circuit
View Patent ↗An integrated circuit (IC) with negative potential protection includes a switch, a gate drive circuit and a comparator. The switch includes a double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, which is formed in a second-type substrate. The switch also includes a second-type+ isolation ring formed in the substrate to isolate the first-type epitaxial pocket. An output of the gate drive circuit is coupled across a gate and a source of the switch. An output of the comparator is coupled to a second input of the gate drive circuit and a first input of the comparator receives a reference signal. A second input of the comparator is coupled to the epitaxial pocket. The comparator provides a turn-on signal that causes the switch to conduct current, when a signal at the second input of the comparator is below the reference signal.
1. An integrated circuit having negative potential protection, comprising:
a switch, comprising:
a double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, wherein the first-type epitaxial pocket is formed in a second-type substrate; and
a second-type+ isolation ring formed in the substrate to isolate the first-type epitaxial pocket;
a gate drive circuit including a first input, a second input and an output, wherein the output of the gate drive circuit is coupled across a gate and a source of the switch; and
a comparator including an output, a first input and a second input, wherein an output of the comparator is coupled to the second input of the gate drive circuit, the first input of the comparator receives a reference signal and the second input of the comparator is coupled to the first-type epitaxial pocket which functions as a drain of the switch, and wherein the comparator provides a turn-on signal to the gate drive circuit when a signal at the second input of the comparator is below the reference signal, where the turn-on signal causes the gate drive circuit to provide another turn-on signal to the gate of the switch causing the switch to conduct current.
2. The integrated circuit of claim 1 , wherein a channel of the DMOS cell shorts out a base-emitter junction of a parasitic PNP transistor when the switch is conducting.
3. The integrated circuit of claim 2 , wherein a resistance of the channel of the DMOS cell works in conjunction with a resistance of the first-type epitaxial pocket to reduce a magnitude of the signal on the second input of the comparator.
4. The integrated circuit of claim 1 , further comprising:
a plurality of first-type+ regions formed in the first-type epitaxial pocket on either side of a body of the DMOS cell.
5. The integrated circuit of claim 1 , further comprising:
a pass transistor including a gate, a drain and a source, wherein the drain of the pass transistor is coupled to the drain of the switch and the source of the pass transistor is coupled to the second input of the comparator, and wherein the gate of the pass transistor is controlled to couple the drain of the switch to the second input of the comparator when a voltage at the drain of the switch is below a predetermined level.
6. The integrated circuit of claim 1 , wherein the first-type epitaxial pocket is an N-type epitaxial pocket.
7. The integrated circuit of claim 1 , wherein the second-type+ isolation ring is a P-type+ isolation ring.
8. An integrated circuit having negative potential protection, comprising:
a switch, comprising:
a double-diffused metal-oxide semiconductor (DMOS) cell formed in an N-type epitaxial pocket, wherein the N-type epitaxial pocket is formed in a P-type substrate; and
a P-type+ isolation ring formed in the substrate to isolate the N-type epitaxial pocket;
a gate drive circuit including a first input, a second input and an output, wherein the output of the gate drive circuit is coupled across a gate and a source of the switch; and
a comparator including an output, a first input and a second input, wherein an output of the comparator is coupled to the second input of the gate drive circuit, the first input of the comparator receives a reference signal and the second input of the comparator is coupled to the N-type epitaxial pocket which functions as a drain of the switch, and wherein the comparator provides a turn-on signal to the gate drive circuit when a signal at the second input of the comparator is below the reference signal, where the turn-on signal causes the gate drive circuit to provide another turn-on signal to the gate of the switch causing the switch to conduct current.
9. The integrated circuit of claim 8 , wherein a channel of the DMOS cell shorts out a base-emitter junction of a parasitic PNP transistor when the switch is conducting.
10. The integrated circuit of claim 9 , wherein a resistance of the channel of the DMOS cell works in conjunction with a resistance of the first-type epitaxial pocket to reduce a magnitude of the signal on the second input of the comparator.
11. The integrated circuit of claim 10 , further comprising:
a plurality of N-type+ regions formed in the N-type epitaxial pocket on either side of a body of the DMOS cell.
12. The integrated circuit of claim 8 , further comprising:
a pass transistor including a gate, a drain and a source, wherein the drain of the pass transistor is coupled to the drain of the switch and the source of the pass transistor is coupled to the second input of the comparator, and wherein the gate of the pass transistor is controlled to couple the drain of the switch to the second input of the comparator when a voltage at the drain of the switch is below a predetermined level.
13. The integrated circuit of claim 8 , further comprising:
a plurality of N-type+ regions formed in the N-type epitaxial pocket on either side of a body of the DMOS cell.
14. The integrated circuit of claim 13 , further comprising:
a pass transistor including a gate, a drain and a source, wherein the drain of the pass transistor is coupled to the drain of the switch and the source of the pass transistor is coupled to the second input of the comparator, and wherein the gate of the pass transistor is controlled to couple the drain of the switch to the second input of the comparator when a voltage at the drain of the switch is below a predetermined level.
15. An integrated circuit having negative potential protection, comprising:
a switch, comprising:
a double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, wherein the first-type epitaxial pocket is formed in a second-type substrate, and wherein the first-type epitaxial pocket is an N-type epitaxial pocket; and
a second-type+ isolation ring formed in the substrate to isolate the first-type epitaxial pocket;
a gate drive circuit including a first input, a second input and an output, wherein the output of the gate drive circuit is coupled across a gate and a source of the DMOS cell; and
a comparator including an output, a first input and a second input, wherein an output of the comparator is coupled to the second input of the gate drive circuit, the first input of the comparator receives a reference signal and the second input of the comparator is coupled to the first-type epitaxial pocket which functions as a drain of the switch, and wherein the comparator provides a turn-on signal to the gate drive circuit when a signal at the second input of the comparator is below the reference signal, where the turn-on signal causes the gate drive circuit to provide another turn-on signal to the gate of the switch causing the switch to conduct current.
16. The integrated circuit of claim 15 , wherein a channel of the DMOS cell shorts out a base-emitter junction of a parasitic PNP transistor when the switch is conducting.
17. The integrated circuit of claim 16 , wherein a resistance of the channel of the DMOS cell works in conjunction with a resistance of the first-type epitaxial pocket to reduce a magnitude of the signal on the second input of the comparator.
18. The integrated circuit of claim 15 , further comprising:
a plurality of N-type+ regions formed in the N-type epitaxial pocket on either side of a body of the DMOS cell.
19. The integrated circuit of claim 15 , further comprising:
a pass transistor including a gate, a drain and a source, wherein the drain of the pass transistor is coupled to the drain of the switch and the source of the pass transistor is coupled to the second input of the comparator, and wherein the gate of the pass transistor is controlled to couple the drain of the switch to the second input of the comparator when a voltage at the drain of the switch is below a predetermined level.
20. The integrated circuit of claim 15 , wherein the second-type+ isolation ring is a P-type+ isolation ring.