IP Library Granted Patent US 7,733,761
Granted Patent B2
US 7,733,761 · App. 11/261,612 · Granted Jun 8, 2010

Ferroelectric recording medium comprising anisotropic conduction layer, recording apparatus comprising the same, and recording method of the same

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Quick Facts
Patent No.
US 7,733,761
App. No.
11/261,612
Granted
Jun 8, 2010
Kind
B2
Abstract

Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.

Claims (46)

1. A ferroelectric recording medium comprising:

a ferroelectric recording layer that includes sectors for storing data and is formed of a polarization reversal ferroelectric material; and

an anisotropic conduction layer that includes sectors corresponding to the sectors of the ferroelectric recording layer, respectively, covers the ferroelectric recording layer, and changes into a conductor or a non-conductor based on external energy,

wherein each of the sectors of the anisotropic conduction layer directly contacts each surrounding sector of the anisotropic conduction layer.

2. The ferroelectric recording medium of claim 1 , wherein the energy is

electric energy.

3. The ferroelectric recording medium of claim 1 , wherein the anisotropic conduction layer is changed into a conductor when the external energy is greater than a predetermined level.

4. The ferroelectric recording medium of claim 1 , wherein the anisotropic conduction layer is changed into a nonconductor when the external energy is removed.

5. The ferroelectric recording medium of claim 1 , wherein the anisotropic conduction layer is attached to the ferroelectric recording layer.

6. A recording apparatus comprising:

a head tip performing a reading/writing operation; and

a ferroelectric recording medium comprising:

a ferroelectric recording layer that includes sectors for storing data and is formed of a polarization reversal ferroelectric material, and

an anisotropic conduction layer that includes sectors corresponding to the sectors of the ferroelectric recording layer, respectively, covers the ferroelectric recording layer, and changes into a conductor or a non-conductor based on external energy,

wherein each of the sectors of the anisotropic conduction layer directly contacts each surrounding sector of the anisotropic conduction layer.

7. The recording apparatus of claim 6 , wherein the head tip is a silicon tip.

8. The recording apparatus of claim 6 , wherein the energy is electric energy.

9. The recording apparatus of claim 6 , wherein the anisotropic conduction layer is changed into a conductor when the external energy is greater than a predetermined level.

10. The recording apparatus of claim 6 , wherein the anisotropic conduction layer is changed into a nonconductor when the external energy is removed.

11. The recording apparatus of claim 6 , wherein the anisotropic conduction layer is attached to the ferroelectric recording layer.

12. A recording method of a ferroelectric recording medium having a ferroelectric recording layer that includes sectors for storing data and an anisotropic conduction layer that includes sectors corresponding to the sectors of the ferroelectric recording layer, respectively, and covers the ferroelectric recording layer, the method comprising:

applying external energy to the anisotropic conduction layer;

changing the anisotropic conduction layer into a conductor using the external energy;

transferring the external energy to the ferroelectric recording layer through the anisotropic conduction layer; and

reversing the polarization of the ferroelectric recording layer using the external energy to perform a recording operation,

wherein each of the sectors of the anisotropic conduction layer directly contacts each surrounding sector of the anisotropic conduction layer.

13. The method of claim 12 , wherein the changing of the anisotropic conduction layer into a conductor comprises controlling the external energy to be greater than a first critical voltage required to change the anisotropic conduction layer into a conductor.

14. The method of claim 13 , further comprising changing the anisotropic conduction layer into a nonconductor after the reversing of the polarization.

15. The method of claim 14 , wherein the changing of the anisotropic conduction layer into a nonconductor comprises controlling the external energy to be less than first critical voltage required to change the anisotropic conduction layer into a conductor.

16. The method of claim 14 , wherein the changing of the anisotropic conduction layer into a nonconductor comprises controlling the external energy to be greater than a second critical voltage required to change the anisotropic conduction layer into a nonconductor.

17. A ferroelectric recording medium comprising:

a ferroelectric recording layer that includes sectors for storing data and is formed of a polarization reversal ferroelectric material; and

an anisotropic conduction layer that includes sectors corresponding to the sectors of the ferroelectric recording layer, respectively, covers the ferroelectric recording layer, and changes into a conductor or a non-conductor based on external energy,

wherein when the anisotropic layer is changed into a conductor, an electrical path is formed only between the anisotropic conduction layer and the ferroelectric recording layer below the anisotropic conduction layer in a direction perpendicular to the plane of the anisotropic conduction layer, and the anisotropic conduction layer remains an insulator in the plane parallel to the anisotropic conduction layer.

18. A recording apparatus comprising:

a head tip performing a reading/writing operation; and

a ferroelectric recording medium comprising:

a ferroelectric recording layer that includes sectors for storing data and is formed of a polarization reversal ferroelectric material, and

an anisotropic conduction layer that includes sectors corresponding to the sectors of the ferroelectric recording layer, respectively, covers the ferroelectric recording layer, and changes into a conductor or a non-conductor based on external energy,

wherein when the anisotropic layer is changed into a conductor, an electrical path is formed only between the anisotropic conduction layer and the ferroelectric recording layer below the anisotropic conduction layer in a direction perpendicular to the plane of the anisotropic conduction layer, and the anisotropic conduction layer remains an insulator in the plane parallel to the anisotropic conduction layer.

19. A recording method for a ferroelectric recording medium having a ferroelectric recording layer that includes sectors for storing data and an anisotropic conduction layer that includes sectors corresponding to the sectors of the ferroelectric recording layer, respectively, and covers the ferroelectric recording layer, the method comprising:

applying external energy to the anisotropic conduction layer;

changing the anisotropic conduction layer into a conductor using the external energy;

transferring the external energy to the ferroelectric recording layer through the anisotropic conduction layer; and

reversing the polarization of the ferroelectric recording layer using the external energy to perform a recording operation,

wherein when the anisotropic layer is changed into a conductor, an electrical path is formed only between the anisotropic conduction layer and the ferroelectric recording layer below the anisotropic conduction layer in a direction perpendicular to the plane of the anisotropic conduction layer, and the anisotropic conduction layer remains an insulator in the plane parallel to the anisotropic conduction layer.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE ERRONEOUSLY FILED NO. 7255478 FROM SCHEDULE PREVIOUSLY RECORDED AT REEL: 028153 FRAME: 0689. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 5, 2016
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 040001/0920 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SEAGATE TECHNOLOGY INTERNATIONAL
Reel/Frame 028153/0689 →