Process for producing boron nitride
View Patent ↗A process for producing boron nitride of high purity and high thermal conductivity, wherein a oxygen-containing boron compound is reacted with a nitrogen-containing source in the presence of a dopant at a temperature of at least 1000° C. for at least one hour, and wherein the dopant forms metal borate impurities with a vaporizing temperature that is lower than the highest processing temperature in the process.
1. A process for producing hexagonal boron nitride compound, which comprises:
reacting in a reaction zone an oxygen-containing boron compound with a nitrogen-containing source in the presence of one or more compounds used as dopants at a processing temperature of at least 1000° C. for at least one hour to form a hexagonal boron nitride compound, wherein the dopants are metal compounds that form metal borates with a vaporizing temperature that is lower than the processing temperature, wherein the oxygen-containing boron compound is introduced into the reaction zone as a solid.
2. The process of claim 1 , wherein the hexagonal boron nitride compound displays a thermal conductivity of at least 1.5 W/mK.
3. The process of claim 1 , wherein the hexagonal boron nitride compound displays a thermal conductivity of at least 3 W/mK.
4. The process of claim 1 , wherein the hexagonal boron nitride compound displays a thermal conductivity of at least 5 W/mK.
5. The process of claim 1 , wherein the oxygen-containing boron compound reacts with the nitrogen-containing source in the presence of the dopant at a processing temperature ranging from 1000 to 2300° C.
6. The process of claim 5 , wherein the processing temperature is at least 1850° C. and the hexagonal boron nitride compound has a final purity as produced of at least 95%.
7. The process of claim 6 , wherein the processing temperature is at least 2000° C. and the hexagonal boron nitride compound has a final purity as produced of at least 99%.
8. The process of claim 5 , wherein the oxygen-containing boron compound reacts with the nitrogen-containing source in the presence of the dopant at a processing temperature ranging from 1000 to 2300° C., and for a period of up to 72 hours.
9. The process of claim 8 , wherein the reaction is carried out for a period of up to 30 hours.
10. The process of claim 9 , wherein the reaction is carried out for a period of up to 12 hours.
11. The process of claim 10 , wherein the reaction is carried out for a period of up to 6 hours.
12. The process of claim 1 , wherein the dopant comprises at least one compound selected from the group consisting of barium compounds, cesium compounds, potassium compounds, strontium compounds, rubidium compounds, lithium nitrate, lithium oxide, lithium acetylacetonate, lithium cyclopentadienide, dilithium phthalocyanine, dilithium salt, lithium acetate, lithium acetylacetonate, lithium amide, lithium bis(trimethylsilyl)amide, lithium tetrahydridoborate, lithium carbonate, lithium dimethylamide, lithium hydride, lithium hydroxide, lithium metaborate, lithium molybdate, lithium niobate, lithium perchlorate, lithium peroxide, lithium tetraborate, lithium borohydride, lithium triethylhydridoborate, lithium oxalate, and mixtures thereof.
13. The process of claim 12 , wherein the dopant comprises at least one compound selected from the group consisting of barium oxide, barium nitrate, cesium oxide, cesium nitrate, potassium hydroxide, strontium oxide, strontium nitrate, rubidium oxide, rubidium nitride, lithium nitrate, lithium oxide, lithium acetylacetonate, lithium cyclopentadienide, dilithium phthalocyanine, dilithium salt, lithium acetate, lithium acetylacetonate, lithium amide, lithium bis(trimethylsilyl)amide, lithium tetrahydridoborate, lithium carbonate, lithium dimethylamide, lithium hydride, lithium hydroxide, lithium metaborate, lithium molybdate, lithium niobate, lithium perchlorate, lithium peroxide, lithium tetraborate, lithium borohydride, lithium triethylbydridoborate, lithium oxalate, and mixtures thereof.
14. The process of claim 12 , wherein the dopant is present in an amount of at least 1 wt. % of the total weight of the oxygen-containing boron compound and the nitrogen-containing source.
15. The process of claim 12 , wherein the dopant is selected from the group consisting of barium oxide, cesium oxide, potassium hydroxide, strontium oxide, rubidium oxide, lithium nitrate, and mixtures thereof.
16. The process of claim 13 , wherein the dopant is lithium nitrate, and wherein the amount of dopant present is at least 1 wt. % of the total weight of the oxygen-containing boron compound and the nitrogen-containing source.
17. The process of claim 16 , wherein the dopant is lithium nitrate, and wherein the amount of dopant present is at least 2 wt. % of the total weight of the oxygen-containing boron compound and the nitrogen-containing source.
18. The process of claim 13 , wherein the dopant comprises at least one compound selected from the group consisting of lithium nitrate, lithium oxide, lithium acetylacetonate, lithium cyclopentadienide, dilithium phthalocyanine, dilithium salt, lithium acetate, lithium acetylacetonate, lithium amide, lithium bis(trimethylsilyl)amide, lithium tetrahydridoborate, lithium carbonate, lithium dimethylamide, lithium hydride, lithium hydroxide, lithium metaborate, lithium molybdate, lithium niobate, lithium perchlorate, lithium peroxide, lithium tetraborate, lithium borohydride, lithium triethylhydridoborate, lithium oxalate, and mixtures thereof.
19. The process of claim 18 , wherein the dopant comprises at least one compound selected from the group consisting of lithium nitrate, lithium oxide, lithium carbonate, lithium hydride, lithium hydroxide, lithium metaborate, lithium peroxide, lithium tetraborate, lithium borohydride, and mixtures thereof.
20. The process of claim 19 , wherein the dopant is lithium nitrate.
21. The process of claim 1 , wherein said process is a continuous process.
22. A process for producing hexagonal boron nitride compound, which process comprising the steps of:
a) forming a mixture of an oxygen-containing boron compound, a nitrogen-containing source, and a dopant, the dopant being present at an amount of at least 1 wt. % of the total weight of the oxygen-containing boron compound and the nitrogen-containing source, wherein the mixture comprises only solids;
b) heating the mixture at a temperature of at least 200° C. for at least ½ hour to dry off any moisture in the mixture;
c) subjecting the mixture to a processing temperature of at least 1200° C. for at least one hour to form a hexagonal boron nitride compound;
wherein the dopant is a metal compound that forms a metal borate with a vaporizing temperature that is lower than the processing temperature.
23. The process of claim 22 , wherein the processing temperature is at least 2000° C. and the product as formed has a purity of at least 99% boron nitride.
24. A process of for producing hexagonal boron nitride compound, comprising:
a) forming a mixture of an oxygen-containing boron compound, a nitrogen-containing source, and a dopant, the dopant being present at an amount of at least 1 wt. % of the total weight of the oxygen-containing boron compound and the nitrogen-containing source, wherein the mixture comprises only solids:
b) subjecting the mixture to a processing temperature of at least 2000° C. for at least one hour to form a hexagonal boron nitride compound:
wherein the dopant is a metal compound that forms a metal borate with a vaporizing temperature that is lower than the processing temperature.