Process for producing boron nitride
View Patent ↗A process for producing boron nitride using a boron containing ore as a starting material, by reacting naturally occurring ulexite with ammonia at high temperature, for a boron nitride with high impurity and at a high yield.
1. A process for producing a polycrystalline hexagonal boron nitride compound, which comprises: heating a mixture containing a boron-containing compound comprising ulexite with a nitrogen-containing compound selected from the group consisting of ammonia, organic primary, secondary, and tertiary amines, and mixtures thereof, for at least 10 minutes at a temperature of at least 700° C., under a non-oxidizing atmosphere to form boron nitride.
2. The process of claim 1 , wherein the nitrogen-containing compound comprises ammonia.
3. The process of claim 1 , wherein the nitrogen-containing compound is present in a ratio of about 30 to 55 wt. % of nitrogen-containing compound to the boron-containing compound.
4. The process of claim 3 , wherein the nitrogen-containing compound is present in a ratio of about 40 to 50 wt: % of nitrogen-containing compound to the boron-containing compound.
5. The process of claim 1 , wherein the mixture is heated at a temperature ranging from 1000 to 2300° C.
6. The process of claim 1 , wherein the mixture is heated for at least ½ hour.
7. The process of claim 6 , wherein the mixture is heated for at least 1 hour at a temperature ranging from 1200 to 2300° C.
8. The process of claim 7 , wherein the mixture is heated at a temperature ranging from 1000 to 2300° C. for up to 24 hours.
9. The process of claim 1 , wherein the boron-containing compound further comprises up to 50 wt. % of boric acid.
10. The process of claim 9 , wherein the boron-containing compound further comprises up to 35 wt. % of boric acid.
11. The process of claim 1 , wherein the nitrogen-containing compound comprises melamine.
12. A process for producing a polycrystalline hexagonal boron nitride compound, which comprises:
a) forming a mixture of a boron-containing compound comprising ulexite with a nitrogen-containing compound selected from the group consisting of organic primary, secondary, and tertiary amines, and mixtures thereof;
b) heating the mixture at a temperature of at least 200° C. for at least ½ hour to dry off any moisture in the mixture;
c) subjecting the mixture to a processing temperature of at least 1000° C. for up to 24 hours to form a hexagonal boron nitride compound.
13. The process of claim 12 , wherein the nitrogen-containing compound is present in a ratio of about 30 to 55 wt. % of nitrogen-containing compound to the boron-containing compound.
14. The process of claim 12 , wherein the mixture of boron-containing compound comprising ulexite and nitrogen-containing compound is subject to a processing temperature of about 1800° C. to about 2400° C. for at least 2 hours.
15. The process of claim 12 , further comprising the step of sintering the hexagonal boron nitride compound at a temperature of about 1800° C. to about 2400° C. for 2 to 3 hours.
16. The process of claim 12 , further comprising the step of washing the hexagonal boron nitride compound in a solution of HCl solution of 26 vol. % at a temperature of at least 50° C. , wherein the resulting hexagonal boron nitride compound contains at least 90 wt. % boron nitride.
17. The process of claim 12 , wherein the nitrogen-containing compound comprises melamine.
18. A process for producing a polycrystalline hexagonal boron nitride compound, which comprises:
a) forming a mixture of a boron-containing compound comprising ulexite with a nitrogen-containing compound selected from the group consisting of organic primary, secondary, and tertiary amines, and mixtures thereof, in a ratio of 35 to 55 wt. % of the nitrogen-containing compound to the boron-containing compound;
b) heating the mixture at a temperature of at least 200° C. for at least ½ hour to dry off any moisture in the mixture;
c) subjecting the mixture to a processing temperature of at least 1100° C. for up to 5 hours to form an incompletely reacted boron nitride compound; and
d) subjecting the incompletely reacted boron nitride compound to a processing temperature of 1200 to 2300° C. for up to 24 hours to form a hexagonal boron nitride compound.
19. The process of claim 18 , wherein the boron-containing compound further comprises up to 35 wt. % of boric acid.
20. The process of claim 19 , wherein the nitrogen-containing compound comprises melamine.