IP Library Granted Patent US 7,265,948
Granted Patent B2
US 7,265,948 · App. 11/267,186 · Granted Sep 4, 2007

Magnetoresistive element with oxide magnetic layers and metal magnetic films deposited thereon

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,265,948
App. No.
11/267,186
Granted
Sep 4, 2007
Kind
B2
Abstract

No related magnetoresistive multi-layered films made from a metal magnetic film provide sufficient reproducing output power. A high-polarized layer with a thickness of 10 nm or less is formed as a Fe-rich Fe—O layer in contact with the interface of a non-magnetic intermediate layer and the resulting layers are heat treated to form a multi-layered film of ferromagnetic Fe—O layers, achieving a magnetoresistive element having high magnetoresistance.

Claims (10)

1. A magnetoresistive element having the multi-layered composition of a first ferromagnetic metal layer/a non-magnetic intermediate layer/a second ferromagnetic layer/an antiparallel coupling layer/a third ferromagnetic metal layer/an antiferromagnetic film, and said magnetoresistive element including elements, which allow said multi-layered composition to induce magnetoresistance when a relative magnetization angle defined between said ferromagnetic layers varies depending on an external magnetic field exerted, and at least one pair of electrodes for detecting the change in said magnetoresistance, wherein:

the magnetization of said third ferromagnetic layer is fixed substantially to the magnetic field to be sensed by means of said antiferromagnetic film and exchange coupling deposited on its whole surface by means of an exchange coupling force applied by said antiferromagnetic film, by which the magnetization of said second ferromagnetic layer is fixed substantially antiparallel to the magnetization orientation of said third ferromagnetic layer by means of the exchange coupling force applied by said antiparallel coupling layer, further by which the magnetization of said second ferromagnetic metal layer is fixed substantially to the magnetic field to be sensed,

said second ferromagnetic layer is composed of the multi-layered construction of a high-polarized layer, which is a mixture of a ferromagnetic oxide and a ferromagnetic metal or a mixture of a ferromagnetic oxide with a high-polarization and the ferromagnetic metal, and a ferromagnetic metal sub-layer,

said magnetoresistive element having the composition of the first ferromagnetic layer/the non-magnetic intermediate layer/the high-polarized layer/the ferromagnetic metal sub-layer,

said first ferromagnetic layer is composed of the multi-layered construction of another high-polarized layer, which is a mixture of a ferromagnetic oxide and a ferromagnetic metal or a mixture of a ferromagnetic oxide with a high-polarization and the ferromagnetic metal, and another ferromagnetic metal sub-layer, and

said magnetoresistive element having the composition of said another ferromagnetic metal sub-layer/said another high-polarized layer/the non-magnetic intermediate layer/the high-polarized layer/the ferromagnetic metal sub-layer.

2. The magnetoresistive element claimed in claim 1 , wherein said high-polarized layer has a thickness of 0.5-5 nm.

3. The magnetoresistive element claimed in claim 1 , wherein said non-magnetic intermediate layer is composed of at least one conductive metal selected from the group of Cu, Au, Ag, Al, Pt, Pd, Os, Re, Ru, Rh, and their alloys.

4. The magnetoresistive element claimed in claim 1 , wherein said electrodes are structured so that a current is applied in the direction of a thickness of said multi-layered composition.

5. The magnetoresistive element claimed in claim 1 , wherein said high-polarized layer has a thickness of 1-3 nm.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 7, 2005
From: HOSHIYA, HIROYUKI; SOEYA, SUSUMU; MEGURO, KENICHI
To: HITACHI, LTD.
Reel/Frame 017192/0272 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 7, 2005
From: HITACHI, LTD.
To: HITACHI GLOBAL STORAGE TECHNOLOGIES JAPAN, LTD.
Reel/Frame 017193/0499 →