IP Library Granted Patent US 8,525,154
Granted Patent B2
US 8,525,154 · App. 11/269,575 · Granted Sep 3, 2013

Light-emitting device having optical resonance layer

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Quick Facts
Patent No.
US 8,525,154
App. No.
11/269,575
Granted
Sep 3, 2013
Kind
B2
Abstract

Provided is a light-emitting device which has a simple structure and can be manufactured in a simple process, has increased light coupling efficiency and brightness, and can reduce adverse effects of optical resonance on a view angle and emission spectrum. The light-emitting device includes a substrate; a light-emitting diode formed on the substrate; and an optical resonance layer formed outside the light-emitting diode that induces resonance of light emitted from the light-emitting diode.

Claims (34)

1. A light-emitting device comprising:

a substrate;

a light-emitting diode arranged on the substrate;

an interlayer arranged between the substrate and the light-emitting diode; and

an optical resonance layer consisting of a first layer and a second layer arranged between the light-emitting diode and the substrate,

wherein an uppermost surface of the first layer directly contacts the interlayer, a lowermost surface of the second layer directly contacts the substrate, and a lowermost surface of the first layer directly contacts an uppermost surface of the second layer, the optical resonance layer to induce resonance of light emitted from the light-emitting diode, and

wherein a refractive index of the second layer is higher than that of the first layer.

2. The light-emitting device of claim 1 , wherein the second layer has a higher refractive index than the first layer by 0.2 or more.

3. The light-emitting device of claim 1 , wherein the first layer has a refractive index in the range of 1 to 1.6.

4. The light-emitting device of claim 1 , wherein the first layer comprises nano porous silica, siloxane, magnesium fluoride, calcium fluoride, Teflon, silica aero gel, or silicon oxide.

5. The light-emitting device of claim 1 , wherein the second layer has a refractive index in the range of 1.6 to 2.3.

6. The light-emitting device of claim 1 , wherein the second layer comprises silicon nitride, titanium oxide, hafnium dioxide, niobium oxide, tantalum oxide, antimony oxide, synthetic polymer, or benzocylobutene (BCB).

7. The light-emitting device of claim 1 , wherein the interlayer is composed of a denser material than the first layer.

8. The light-emitting device of claim 1 , wherein the interlayer has a refractive index in the range of 1.3 to 2.3.

9. The light-emitting device of claim 1 , wherein the interlayer comprises Ormocer, silicon oxide, benzocylobutene (BCB), or silicon nitride.

10. The light-emitting device of claim 1 , wherein:

the light-emitting diode comprises a pair of electrodes opposing each other and a light-emitting layer arranged between the electrodes,

one electrode of the pair of electrodes comprises a reflective layer that reflects light emitted from the light-emitting layer, and

the optical resonance layer opposes the reflective layer with the light-emitting layer arranged therebetween.

11. The light-emitting device of claim 10 , satisfying equation 4:

t 4=( n λ)/ 2   (4)

wherein

t 4 is a distance from a reflection interface of the reflective layer to an interface between the first layer and the second layer;

n is a positive integer; and

λ is a wavelength of light emitted from the light-emitting layer.

12. The light-emitting device of claim 11 , wherein t 4 is controlled by adjusting a thickness of at least one of the first layer and the interlayer.

13. The light-emitting device of claim 10 , satisfying equation 5:

t 5=(2 n + 1)λ/ 4   (5)

wherein

t 5 is a distance from a reflection interface of the reflective layer to an outer surface of the second layer;

n is a positive integer; and

λ, is a wavelength of light emitted from the light-emitting layer.

14. The light-emitting device of claim 13 , wherein t 5 is controlled by adjusting a thickness of the second layer.

15. The light-emitting device of claim 1 , wherein the light-emitting diode is an organic light-emitting diode.

Assignments (1)
MERGER Recorded Aug 29, 2012
From: SAMSUNG MOBILE DISPLAY CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 028868/0955 →