Semiconductor device and method for fabricating the same
View Patent ↗On an insulation layer 12 formed on a silicon substrate 10 , there are formed in an NMOS transistor region 16 an NMOS transistor 14 comprising a silicon layer 34 , a lattice-relaxed silicon germanium layer 22 formed on the silicon layer 34 , a tensile-strained silicon layer 24 formed on the silicon germanium layer 22 and a gate electrode 28 formed on the silicon layer 24 with a gate insulation film 26 formed therebetween and in a PMOS transistor region 20 a PMOS transistor 18 comprising a silicon layer 34 , a compression-strained silicon germanium layer formed on the silicon layer 34 and a gate electrode 28 formed on the silicon germanium layer 36 with a gate insulation film 26 formed therebetween.
1. A method for fabricating a semiconductor device comprising the steps of:
forming a lattice-relaxed silicon germanium layer on a silicon layer in a first region, the silicon layer being formed on a substrate with an insulation layer formed therebetween;
forming a tensile-strained silicon layer on the lattice-relaxed silicon germanium layer; and
forming a compression-strained silicon germanium layer directly on the silicon layer in a second region,
an NMOS transistor having the tensile-strained silicon layer as a channel and a PMOS transistor having the compression-strained silicon germanium layer as a channel being formed.
2. A method for fabricating a semiconductor device according to claim 1 , wherein
the step of forming the lattice-relaxed silicon germanium layer comprises the steps of:
forming a compression-strained silicon germanium layer on the silicon layer in the first region; and lattice-relaxing the compression-strained silicon germanium layer by thermal processing.
3. A method for fabricating a semiconductor device according to claim 2 , wherein
in the step of lattice-relaxing the compression-strained silicon germanium layer, the thermal processing is conducted with an insulation film formed on the silicon layer in the second region.
4. A method for fabricating a semiconductor device according to claim 2 , wherein
in the step of lattice-relaxing the compression-strained silicon germanium layer, the thermal processing is conducted with an insulation film formed on the compression-strained silicon germanium layer and on the silicon layer in the second region.
5. A method for fabricating a semiconductor device according to claim 1 , further comprising before the step of forming the lattice-relaxed silicon germanium layer, the step of
isolating the first region and the second region of the silicon layer from each other.
6. A method for fabricating a semiconductor device according to claim 5 , wherein
in the step of isolating the first region and the second region of the silicon layer from each other, a trench is formed in the silicon layer down to the insulation layer to thereby isolate the first region and the second region of the silicon layer.
7. A method for fabricating a semiconductor device according to claim 5 , wherein
in the step of isolating the first region and the second region of the silicon layer from each other, a device isolation film is formed between the first region and the second region to thereby isolate the first region and the second region of the silicon layer from each other.
8. A method for fabricating a semiconductor device according to claim 1 , wherein
the step of forming the lattice-relaxed silicon germanium layer comprises the steps of:
forming a compression-strained silicon germanium layer on the silicon layer in the first region; and
applying an energy beam to the compression-strained silicon germanium layer to thereby lattice-relax the compression-strained silicon germanium layer.
9. A method for fabricating a semiconductor device according to claim 8 , wherein
in the step of lattice-relaxing the compression-strained silicon germanium layer, with an insulation film which can transmit the energy beam formed on the compression-strained silicon germanium layer and on the silicon layer in the second region, the energy beam is applied through the insulation film.
10. A method for fabricating a semiconductor device according to claim 9 , wherein
the insulation film on the compression-strained silicon germanium layer and the insulation film on the silicon layer in the second region are different from each other in thickness.
11. A method for fabricating a semiconductor device according to claim 8 , wherein
in the step of lattice-relaxing the compression-strained silicon germanium layer, the energy beam is applied selectively to the region containing the compression-strained silicon germanium layer and the energy beam is not applied to the silicon layer in the second region.
12. A method for fabricating a semiconductor device according to claim 8 , wherein the energy beam is a laser beam.
13. A method for fabricating a semiconductor device according to claim 12 , the laser beam is pulse-like.
14. A method for fabricating a semiconductor device according to claim 8 , the energy beam is an electron beam.
15. A method for fabricating a semiconductor device according to claim 1 , further comprising after the step of forming the silicon germanium layer, the steps of:
removing the silicon germanium layer in a body contact region; and
forming an electrode for the body contact on the silicon layer in the body contact region.