Organic light emitting display and method of fabricating the same

1. An organic light emitting display, comprising:

a first electrode arranged on a substrate;

an organic layer arranged on the first electrode and comprising at least a hole injection layer, a hole acceleration layer, a hole transport layer, and an emission layer; and

a second electrode arranged on the organic layer,

wherein a hole mobility of a material comprising the hole acceleration layer is higher than a hole mobility of a material comprising the hole injection layer,

wherein the hole mobility of the material comprising the hole acceleration layer is higher than 5.1×10 −4 cm 2 /Vs,

wherein the hole acceleration layer comprises one material selected from the group consisting of CuPc, TBAHA, TF-TCNQ, a-6T, and PEDOT,

wherein the hole injection layer comprises one material selected from the group consisting of CuPc, TBAHA, TF-TCNQ, a-6T, TPD, TDATA, and PEDOT, and

wherein the hole acceleration layer is arranged between the hole injection layer and the hole transport layer.

2. The display of claim 1 , further comprising:

a thin-film transistor electrically connected to the first electrode.

3. The display of claim 1 , wherein the first electrode is a reflective electrode, and the second electrode is a transparent electrode.

4. The display of claim 1 , wherein the hole mobility of the material comprising the hole injection layer is in a range of 5.1×10 −4 to 1.7×10 3 cm 2 /Vs.

5. The display of claim 1 , wherein a sum of thicknesses of the hole injection layer, the hole acceleration layer, and the hole transport layer is in a range of 1,300 Å to 2,300 Å.

6. The display of claim 1 , wherein the organic layer further comprises at least one of a hole blocking layer, an electron transport layer, and an electron injection layer.

7. The display of claim 1 , wherein the hole acceleration layer is arranged on the hole injection layer, and the hole transport layer is arranged on the hole acceleration layer.

8. A method of fabricating an organic light emitting display, comprising:

forming a first electrode on a substrate;

forming an organic layer on an emission region of the first electrode, the organic layer comprising at least a hole injection layer, a hole acceleration layer, a hole transport layer, and an emission layer; and

forming a second electrode on the organic layer,

wherein a hole mobility of a material comprising the hole acceleration layer is higher than a hole mobility of a material comprising the hole injection layer,

wherein the hole mobility of the material comprising the hole acceleration layer is higher than 5.1×10 −4 cm 2 /Vs,

wherein the hole acceleration layer comprises one material selected from the group consisting of CuPc, TBAHA, TF-TCNQ, a-6T, and PEDOT, and

wherein the hole injection layer comprises one material selected from the group consisting of CuPc, TBAHA, TF-TCNQ, a-6T, TPD, TDATA, and PEDOT, and

wherein the hole acceleration layer is arranged between the hole injection layer and the hole transport layer.

9. The method of claim 8 , further comprising:

forming a thin-film transistor that is electrically connected to the first electrode.

10. The method of claim 8 , wherein the first electrode is a reflective electrode, and the second electrode is a transparent electrode.

11. The method of claim 8 , wherein the hole mobility of the material comprising the hole injection layer is in a range of 5.1×10 −4 to 1.7×10 3 cm 2 /Vs.

12. The method of claim 8 , wherein a sum of thicknesses of the hole injection layer, the hole acceleration layer, and the hole transport layer is in a range of 1,300 Å to 2,300 Å.

13. The method of claim 8 , wherein the organic layer further comprises at least one of a hole blocking layer, an electron transport layer, and an electron injection layer.

14. The method of claim 8 , wherein the organic layer is formed by one of a laser induced thermal imaging method, a lithography method, and an inkjet method.