Heteroatomic regioregular poly(3-substitutedthiophenes) as thin film conductors in diodes which are not light emitting or photovoltaic
View Patent ↗Regio-regular polythiophenes used in diodes which are not light emitting or photovoltaic. High quality, processable thin film polymer films can be made. The thin film can have a thickness of about 50 nm to about one micron, and the conductive thin film can be applied by spin casting, drop casting, screening, ink-jetting, transfer or roll coating. The polythiophenes can be homopolymers or copolymers. The regio-regular poly(3-substitutedthiophene) can be derivatized so that the 3-substituent is an alkyl, aryl, or alkyl/aryl moiety with a heteroatom substitution in either the α- or beta-position of the 3-substituent.
1. A diode comprising a conductive thin film which comprises at least one polymer comprising a regio-regular poly(3-substitutedthiophene) in which the 3-substituent is an alkyl, aryl, or alkyl/aryl moiety with a heteroatom substitution in either the α- or beta-position of the 3-substituent, wherein the diode does not provide electroluminescent or photovoltaic properties.
2. The diode according to claim 1 , wherein the substitution is with oxygen or sulfur.
3. The diode according to claim 1 , wherein the substitution is with oxygen.
4. The diode according to claim 1 , wherein the polymer is a homopolymer.
5. The diode according to claim 1 , wherein the polymer is a copolymer.
6. The diode according to claim 1 , wherein the polymer is a block copolymer.
7. The diode according to claim 1 , wherein the polymer is an alternating copolymer.
8. The diode according to claim 1 , wherein the polymer is a random copolymer.
9. The diode according to claim 1 , wherein the conductive polymer has been doped with a doping agent which is an oxidant.
10. The diode according to claim 1 , wherein the thin film has a thickness of about 10 nm to about 50 microns.
11. The diode according to claim 1 , wherein the thin film has a thickness of about 50 nm to about one micron.
12. A diode according to claim 1 , wherein the conductive thin film is applied by spin casting, drop casting, screening, ink-jetting, transfer or roll coating.
13. A diode comprising a p-type material and an n-type material, wherein the p-type material comprises a conductive thin film which comprises at least one polymer comprising a regio-regular poly(3-substitutedthiophene), wherein the diode is not a light-emitting diode.
14. The diode according to claim 13 , wherein the diode is also not a photovoltaic diode.
15. The diode according to claim 13 , wherein the thin film has a thickness of about 50 nm to about one micron.
16. A diode according to claim 13 , wherein the conductive thin film is applied by spin casting, drop casting, screening, ink-jetting, transfer or roll coating.
17. The diode according to claim 13 , wherein the 3-substituent is an alkyl, aryl, or alkyl/aryl moiety with a heteroatom substitution in either the α- or beta-position of the 3-substituent, wherein the diode does not provide electroluminescent or photovoltaic properties.
18. A diode comprising a p-type material and an n-type material, wherein the p-type material comprises a conductive thin film which comprises at least one polymer comprising a regio-regular poly(3-substitutedthiophene), wherein the diode is not a photovoltaic diode.
19. The diode according to claim 17 , wherein the thin film has a thickness of about 50 nm to about one micron and the conductive thin film is applied by spin casting, drop casting, screening, ink-jetting, transfer or roll coating.
20. The diode according to claim 18 , wherein the 3-substituent is an alkyl, aryl, or alkyl/aryl moiety with a heteroatom substitution in either the α- or beta-position of the 3-substituent, wherein the diode does not provide electroluminescent or photovoltaic properties.