Semiconductor device
View Patent ↗A semiconductor device has a structure capable of connecting a lead terminal directly to an electrode on a front surface thereof. The semiconductor device includes a first main electrode provided on the front surface, a second main electrode provided on a back surface, and a metal film provided so as to cover at least a portion of a surface of the first main electrode and for soldering the lead terminal thereto. Here, the metal film includes a plurality of opening portions through which the surface of the first main electrode is exposed.
1. A semiconductor device having a structure capable of connecting a lead terminal directly to an electrode on a front surface thereof, the semiconductor device comprising:
a first main electrode provided on the front surface;
a second main electrode provided on a back surface; and
a metal film provided so as to cover at least a portion of a main surface of the first main electrode and for soldering the lead terminal thereto, the first main electrode being sandwiched between the second main electrode and the metal film,
wherein the metal film has a plurality of opening portions through which the main surface of the first main electrode is exposed, and the opening portions are within the metal film.
2. A semiconductor device having a structure capable of connecting a lead terminal directly to an electrode on a front surface thereof, the semiconductor device comprising:
a first main electrode provided on the front surface;
a second main electrode provided on a back surface; and
a metal film provided so as to cover at least a portion of a main surface of the first main electrode and for soldering the lead terminal thereto, the first main electrode being sandwiched between the second main electrode and the metal film,
wherein the metal film includes an outermost profile line having at least one recessed portion.
3. A semiconductor device having a structure capable of connecting a lead terminal directly to an electrode on a front surface thereof, the semiconductor device comprising:
a first main electrode provided on the front surface;
a second main electrode provided on a back surface; and
a metal film provided so as to cover at least a portion of a main surface of the first main electrode and for soldering the lead terminal thereto, the first main electrode being sandwiched between the second main electrode and the metal film,
wherein at least one corner portion of the surface of the first main electrode is exposed without being covered with the metal film.
4. The semiconductor device according to claim 1 , further comprising at least one controlling electrode on the front surface.
5. The semiconductor device according to claim 1 , further comprising a surface protective film that covers at least a portion of a region of the surface of the first main electrode that is not covered with the metal film.
6. The semiconductor device according to claim 1 , wherein each of the opening portions has an area equal to or greater than 10,000 μm 2 .
7. The semiconductor device according to claim 1 , wherein the opening portions are positioned in continuity with each other.
8. The semiconductor device according to claim 1 , wherein the opening portions are positioned in a straight line.
9. An electric-power semiconductor product comprising:
a semiconductor device having a structure capable of connecting a lead terminal directly to an electrode on a front surface thereof, the semiconductor device comprising:
a first main electrode provided on the front surface;
a second main electrode provided on a back surface; and
a metal film provided so as to cover at least a portion of a main surface of the first main electrode and for soldering the lead terminal thereto, the first main electrode being sandwiched between the second main electrode and the metal film,
wherein the metal film has a plurality of opening portions through which the surface of the first main electrode is exposed, and the opening portions are within the metal film; and
a lead terminal bonded to the first main electrode in a direct-lead-bonding manner via the metal film, while an upper part of the region of the surface of the first main electrode of the semiconductor device that is not covered with the metal film being exposed.