Granted Patent B2

US 7,282,735 · App. 11/276,694 · Granted Oct 16, 2007

Abstract

Claims (25)

1. A thin film transistor comprising:

(a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages wherein the thiophene compound exhibits a regioregular structure;

(b) a gate dielectric; and

(c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a substance comprising a fluorocarbon structure.

2. The transistor of claim 1 , wherein the gate dielectric comprises silicon oxide.

3. The transistor of claim 1 , wherein the layer is a self-assembled monolayer.

4. The transistor of claim 1 , wherein the layer has a thickness ranging from about 0.5 nm to about 500 nm.

5. The transistor of claim 1 , wherein the substance further comprises a heteroatom containing moiety covalently bonded to both the fluorocarbon structure and the gate dielectric.

6. The transistor of claim 5 , wherein the heteroatom containing moiety comprises a silicon atom or a phosphorus atom.

7. The transistor of claim 1 , wherein the substance is a fluoroalkylsilane.

8. The transistor of claim 1 , wherein the thiophene compound is a polymeric compound.

9. The transistor of claim 1 , wherein the thiophene compound is a homopolymer.

10. The transistor of claim 1 , wherein the thiophene compound is a small molecule compound.

11. A thin film transistor comprising:

(a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the thiophene compound is a polymer;

(b) a gate dielectric; and

(c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a fluoroalkylsilane or a fluoroalkylphosphine, or a mixture thereof.

12. A thin film transistor comprising:

(a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages;

(b) a gate dielectric; and

(c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a substance comprising a fluorocarbon structure wherein the fluorocarbon structure is a perfluorocarbon structure.

13. A thin film transistor comprising:

(a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages;

(b) a gate dielectric; and

(c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a substance comprising a fluorocarbon structure wherein the fluorocarbon structure is an unsubstituted fluorocarbon structure.

Assignments (8)