Method of forming semiconductor compound film for fabrication of electronic device and film produced by same using a solid solution
View Patent ↗A process of forming a compound film includes formulating a nano-powder material with a controlled overall composition and including particles of one solid solution The nano-powder material is deposited on a substrate to form a layer on the substrate, and the layer is reacted in at least one suitable atmosphere to form the compound film. The compound film may be used in fabrication of a radiation detector or solar cell.
1. A process of forming a compound film comprising:
formulating a nano-powder material with a controlled overall composition and including particles of one metallic solid solution comprising at least one of copper, gallium, indium, and aluminum, and wherein said particles have diameters of no more than about 200 nanometers;
depositing said nano-powder material on a substrate to form a layer on the substrate, and
reacting the layer in at least one suitable atmosphere to form said compound film.
2. The process of claim 1 , wherein said one solid solution is copper-gallium.
3. The process of claim 2 , wherein said nano-powder material further includes particles of another solid solution.
4. The process of claim 3 , wherein the other solid solution is indium-gallium.
5. The process of claim 4 , wherein said nano-powder material further includes particles of at least one element.
6. The process of claim 5 , wherein said at least one element is indium.
7. The process of claim 5 , wherein said at least one element is copper.
8. The process of claim 5 , wherein said at least one element consists of indium and copper.
9. The process of claim 2 , wherein said nano-powder material further includes particles of at least one element.
10. The process of claim 9 , wherein said at least one element is indium.
11. The process of claim 9 , wherein said at least one element consists of copper and indium.
12. The process of claim 3 , wherein the other solid solution is copper-indium.
13. The process of claim 12 , wherein said nano-powder material further includes particles of a further solid solution.
14. The process of claim 13 , wherein the further solid solution is indium-gallium.
15. The process of claim 14 , wherein said nano-powder material further includes particles of at least one element.
16. The process of claim 15 , wherein said at least one element is indium.
17. The process of claim 15 , wherein said at least one element is copper.
18. The process of claim 15 , wherein said at least one element consists of copper and indium.
19. The process of claim 12 , wherein said nano-powder material further includes particles of at least one element.
20. The process of claim 19 , wherein said at least one element is indium.
21. The process of claim 19 , wherein said at least one element consists of copper and indium.
22. The process of any one of claims 4 , 6 - 8 , 10 , 11 , 14 , 16 - 18 , 20 , and 21 , wherein said nano-powder material additionally includes particles of a CuGaIn solid solution.
23. The process of any one of claims 1 - 21 , wherein said nano-powder material additionally includes particles of at least one of selenium, sulfur, and tellurium.
24. The process of claim 22 , wherein said nano-powder material additionally includes particles of at least one of selenium, sulfur, and tellurium.
25. The process of claim 22 , wherein the suitable atmosphere contains at least one of selenium, sulfur, and tellurium.
26. The process of any one of claims 1 - 21 , wherein the suitable atmosphere contains at least one of selenium, sulfur, and tellurium.
27. The process of claim 1 , wherein the particles are nearly spherical in shape.
28. The process of claim 1 , wherein the particles are formed as platelets.