Semiconductor devices having gallium nitride epilayers on diamond substrates
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
1. A semiconductor apparatus comprising:
a layered structure layer including a wide-gap semiconductor material;
a nucleating layer for nucleating growth of synthetic diamond disposed under said layered structure layer, wherein said nucleating layer includes silicon nitride; and
a synthetic diamond layer disposed under said nucleating layer.
2. The apparatus of claim 1 wherein said layered structure layer includes a layer including a material selected from the group consisting of gallium nitride, aluminum nitride, silicon carbide, and zinc oxide.
3. The apparatus of claim 1 , wherein said layered structure layer has been obtained by epitaxial growth.
4. The apparatus of claim 3 , wherein a semiconductor device is disposed on top of said layered structure layer.
5. The apparatus of claim 1 , wherein said synthetic diamond layer is polycrystalline diamond.
6. The apparatus of claim 1 , wherein said semiconductor apparatus includes a high-electron mobility transistor.
7. A semiconductor apparatus comprising:
a layered structure including at least one layer of a wide-gap semiconductor material, said layered structure having a first surface and a second surface;
at least one electrical contact, said electrical contact disposed on said first surface of said layered structure;
a nucleating layer for nucleating growth of synthetic diamond disposed on said second surface of said layered structure;
a synthetic diamond layer disposed on said nucleating layer,
wherein said semiconductor apparatus includes a high-electron mobility transistor.
8. A semiconductor apparatus comprising:
a layered structure including at least one layer of a wide-gap semiconductor material, said layered structure having a first surface and a second surface;
at least one electrical contact, said electrical contact disposed on said first surface of said layered structure;
a nucleating layer for nucleating growth of synthetic diamond disposed on said second surface of said layered structure, wherein said nucleating layer includes silicon nitride; and
a synthetic diamond layer disposed on said nucleating layer.
9. The apparatus of claim 8 , wherein said layered structure has been obtained by epitaxial growth.
10. The apparatus of claim 8 , wherein said layered structure has been obtained by a single epitaxial growth process.
11. The apparatus of claim 8 , wherein said layered structure has a single lattice constant.
12. The apparatus of claim 8 , wherein said semiconductor apparatus includes a high-electron mobility transistor.
13. A semiconductor apparatus comprising:
a wide-gap semiconductor device, said wide-gap semiconductor device having a contact side and a back side;
a synthetic diamond layer; and
a diamond growth nucleating layer disposed between said back side of said wide-gap semiconductor device and said synthetic diamond layer, wherein said nucleating layer includes silicon nitride.