Method of manufacturing thin film transistor, thin film transistor manufactured using the method, and flat panel display device comprising the thin film transistor
View Patent ↗Provided are a method of manufacturing an organic thin film transistor (TFT), the organic TFT manufactured using the method, and a flat panel display device comprising the organic TFT. The method includes: coating a lubricant on a predetermined region of a substrate where an organic semiconductor layer is not to be formed; coating an organic semiconductor layer on the entire substrate; heating the coated substrate to melt the lubricant; and releasing the organic semiconductor layer formed above the predetermined region from the substrate. According to the method, the organic semiconductor layer can be effectively patterned without damaging the substrate and the organic semiconductor material.
1. A method of manufacturing an organic thin film transistor (TFT), comprising:
coating a lubricant on a predetermined region of a substrate where an organic semiconductor layer is not to be formed;
coating an organic semiconductor layer on the entire substrate;
heating the coated substrate to melt the lubricant; and
releasing the organic semiconductor layer formed above the predetermined region from the substrate.
2. The method of claim 1 , wherein the coating of the lubricant comprises using a stamp having a pattern corresponding to a pattern of the predetermined region of the substrate where the organic semiconductor layer is not to be formed.
3. A method of manufacturing an organic thin film transistor (TFT), comprising:
coating a lubricant on a predetermined region of a substrate where an organic semiconductor layer is not to be formed;
coating an organic semiconductor layer on the entire substrate;
heating the coated substrate to melt the lubricant; and
releasing the organic semiconductor layer formed above the predetermined region from the substrate wherein the organic semiconductor layer comprises at least one material selected from the group consisting of pentacene, tetracene, anthracene, naphthalene, α-6-thiophene, α-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivatives, polythiophene and its derivatives, poly paraphenylene vinylene and its derivatives, poly(paraphenylene) and its derivatives, polyfluorene and its derivatives, polythiophene vinylene and its derivatives, polythiophene-heterocyclic aromatic copolymer and its derivatives, oligothiophene and its derivatives, phthalocyanine which contains a metal, phthalocyanine which does not contain a metal, α-5-thiophene, pyromellitic dianhydride and its derivatives, pyromellitic diimide and its derivatives.
4. A method of manufacturing an organic thin film transistor (TFT), comprising:
coating a lubricant on a predetermined region of a substrate where an organic semiconductor layer is not to be formed;
coating an organic semiconductor layer on the entire substrate;
heating the coated substrate to melt the lubricant; and
releasing the organic semiconductor layer formed above the predetermined region from the substrate further comprising: a vapor of an organic solvent used as a heat source during the melting of the lubricant.
5. The method of claim 4 , wherein the organic solvent includes at least one selected from the group consisting of hexane, cyclohexane, pentane, and cyclopentane.