Method for eliminating backside metal peeling during die separation
View Patent ↗A method of protecting metal traces and contacts on a fabricated semiconductor wafer from mechanical damage during dicing of the fabricated wafer, where the metal traces and contacts form electrical connections with an active device region of the semiconductor. The method includes the steps of providing a group of discrete metal deposits adjacent the metal traces and contacts, wherein said metal deposits are substantially not contiguously connected to each other or to any traces or contacts of the active device regions of semiconductor die, attaching the fabricated wafer to an adhesive tape used for securing the fabricated wafer during a die separation process, separating the die from the fabricated wafer while attached to the adhesive tape and removing the die from the adhesive tape.
1. A method of protecting metal traces and contacts on a fabricated semiconductor wafer from mechanical damage during dicing of the fabricated semiconductor wafer, where the metal traces and contacts form electrical connections with an active device region of the semiconductor comprising:
providing a group of discrete metal deposits adjacent the metal traces and contacts, wherein said discrete metal deposits are substantially not contiguously connected to each other or to any traces or contacts of the active device regions of semiconductor die;
attaching the fabricated semiconductor wafer to an adhesive tape used for securing the fabricated semiconductor wafer during a die separation process;
separating the die from the fabricated semiconductor wafer while attached to the adhesive tape; and
removing the die from the adhesive tape.
2. The method of protecting metal traces and contacts as in claim 1 wherein the step of providing the group of discrete metal deposits further comprises grouping the discrete metal deposits around the protected metal traces and contacts.
3. The method of protecting metal traces and contacts as in claim 1 wherein the step of providing the group of discrete metal deposits further comprises grouping the discrete metal deposits on opposing sides of a separation line of the separated die.
4. The method of protecting metal traces and contacts as in claim 1 wherein the step of providing the group of discrete metal deposits further comprises distributing the discrete metal deposits over an area of each die.
5. The method of protecting metal traces and contacts as in claim 4 wherein the step of distributing the discrete metal deposits over an area of the die further comprises providing a pattern of discrete metal deposits.
6. The method of protecting metal traces and contacts as in claim 4 wherein the step of distributing the discrete metal deposits over an area of the die further comprises providing a two-dimensional array of discrete metal deposits.
7. The method of protecting metal traces and contacts as in claim 1 wherein the step of providing the group of discrete metal deposits further comprises distributing a number of discrete metal deposits over each die such that an aggregate area of the group of discrete metal deposits is no more than 20% of a total area of each die.
8. The method of protecting metal traces and contacts as in claim 1 further comprising defining the discrete metal deposits as being circular.
9. The method of protecting metal traces and contacts as in claim 8 wherein the circular discrete metal deposits further comprise a diameter substantially equal to 8 microns.
10. The method of protecting metal traces and contacts as in claim 9 further comprising spacing the circular discrete metal deposits approximately 8 microns apart.
11. A method of protecting metal traces and contacts on a backside of a fabricated semiconductor wafer from mechanical damage during dicing of the fabricated semiconductor wafer, where the metal traces and contacts form electrical connections with an active device region of the semiconductor comprising:
providing a group of discrete metal deposits adjacent the metal traces and contacts, wherein said discrete metal deposits are substantially not connected to each other or to the active device regions of semiconductor die;
attaching the backside of the fabricated semiconductor wafer to an adhesive tape that secures the fabricated semiconductor wafer during a die separation process;
separating the die from the fabricated semiconductor wafer while attached to the adhesive tape; and
removing the die from the adhesive tape.
12. The method of protecting metal traces and contacts as in claim 11 wherein the step of providing the group of discrete metal deposits further comprises grouping the discrete metal deposits around the protected metal traces and contacts.
13. The method of protecting metal traces and contacts as in claim 11 wherein the step of providing the group of discrete metal deposits further comprises grouping the discrete metal deposits on opposing sides of a separation line of the separated die.
14. The method of protecting metal traces and contacts as in claim 11 wherein the step of providing the group of discrete metal deposits further comprises distributing the discrete metal deposits over an area of each die.
15. The method of protecting metal traces and contacts as in claim 14 wherein the step of distributing the discrete metal deposits over an area of the die further comprises providing a pattern of discrete metal deposits.
16. The method of protecting metal traces and contacts as in claim 14 wherein the step of distributing the discrete metal deposits over an area of the die further comprises providing a two-dimensional array of discrete metal deposits.
17. The method of protecting metal traces and contacts as in claim 11 wherein the step of providing the group of discrete metal deposits further comprises distributing a number of discrete metal deposits over each die such that an aggregate area of the group of discrete metal deposits is no more than 20% of a total area of each die.
18. The method of protecting metal traces and contacts as in claim 11 further comprising defining the discrete metal deposits as being circular.
19. The method of protecting metal traces and contacts as in claim 18 wherein the circular discrete metal deposits further comprise a diameter substantially equal to 8 microns.
20. The method of protecting metal traces and contacts as in claim 19 further comprising spacing the circular discrete metal deposits approximately 8 microns apart.