IP Library Granted Patent US 7,510,742
Granted Patent B2
US 7,510,742 · App. 11/282,214 · Granted Mar 31, 2009

Multilayered boron nitride/silicon nitride fiber coatings

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,510,742
App. No.
11/282,214
Granted
Mar 31, 2009
Kind
B2
Abstract

A composite is described which has particular utility in the formation of components for gas turbine engines. The composite broadly comprises a substrate having a surface and at least one layer of a BN/Si 3 N 4 coating on the substrate surface. The coating preferably is formed by alternative layers of a BN material and a Si 3 N 4 material. The substrate may be a cloth material with fibers, such as SiC fibers, woven therein.

Claims (30)

1. A method for forming a coating comprising the steps of:

providing a reaction chamber having a first tube having a first inlet and a second tube having a second inlet;

placing a substrate in the reaction chamber;

said substrate placing step comprises placing a substrate made of at least one fabric ply having SiC fibers woven into each said ply in the reaction chamber;

heating the substrate to a deposition temperature;

forming at least one coating layer on said substrate; and

said forming step comprising introducing ammonia into said reaction chamber through said second tube and introducing nitrogen into said reaction chamber through said first tube, introducing a boron halogen precursor into said reaction chamber via said first tube to form a boron nitride layer, stopping the flow of said boron halogen precursor, and introducing a silicon halogen precursor into said reaction chamber through said first tube to form a silicon nitride layer,

said forming step further comprising pumping the reaction chamber with ammonia and nitrogen after the flow of said boron halogen precursor has stopped and before the flow of said silicon halogen precursor begins;

wherein said step of introducing said ammonia into said reaction chamber through said second tube prevents said boron halogen precursor and said silicon halogen precursor from reacting with said ammonia prematurely.

2. The method of claim 1 , wherein said forming step further comprises repeating said boron halogen precursor introducing step followed by introducing said silicon halogen precursor a plurality of times.

3. The method of claim 1 , wherein said boron halogen precursor introducing step comprises introducing BF 3 into said reaction chamber and said silicon halogen precursor introducing step comprises introducing SiF 4 into said reaction chamber.

4. The method of claim 3 , maintaining a temperature in the range of from 1100 to 1200° C. in the reaction chamber during deposition of said boron nitride layer.

5. The method of claim 1 , wherein said boron halogen precursor introducing step comprises introducing BCl 3 into said reaction chamber and said silicon halogen precursor introducing step comprises introducing SiCl 4 into said reaction chamber.

6. The method of claim 5 , wherein said heating step comprises heating said substrate to a temperature of 850 ° C.

7. The method of claim 1 , further comprising maintaining a pressure in the reaction chamber of 1-3 torr.

8. The method of claim 6 , wherein said heating step comprises heating said substrate to a temperature in the range of from 850 ° C. to 950 ° C.

9. The method of claim 1 , wherein said substrate placing step comprises providing a substrate formed from a plurality of fabric plies with each of said fabric plies having SiC fibers woven therein.

10. The method of claim 1 , further comprising infiltrating said substrate with SiC.

11. The method of claim 1 , wherein said heating step comprises heating said substrate in an atmosphere of flowing nitrogen.

12. The method of claim 1 , wherein said reaction chamber providing step further comprises providing a reaction chamber wherein said second tube surrounds said first tube.

13. The method of claim 1 , further comprising only said ammonia is introduced into said reaction chamber via said second tube.

14. A method for forming a coating comprising the steps of:

providing a reaction chamber having a first tube having a first inlet and a second tube having a second inlet;

placing a substrate in the reaction chamber;

said substrate placing step comprises placing a substrate selected from the group consisting of: a substrate made of at least one fabric ply having SiC fibers woven into each said ply in the reaction chamber; a gas turbine engine component; and a substrate made of a metallic material;

heating the substrate to a deposition temperature;

forming at least one coating layer on said substrate; and

said forming step comprising introducing ammonia into said reaction chamber through said second tube and introducing nitrogen into said reaction chamber through said first tube, introducing a boron halogen precursor into said reaction chamber via said first tube to form a boron nitride layer, stopping the flow of said boron halogen precursor, and introducing a silicon halogen precursor into said reaction chamber through said first tube to form a silicon nitride layer, and

wherein said forming step further comprises pumping the reaction chamber with ammonia and nitrogen after the flow of said boron halogen precursor has stopped and before the flow of said silicon halogen precursor begins.

15. The method of claim 14 , wherein said substrate placing step comprises providing said substrate made of at least one fabric ply having SiC fibers woven into each said ply.

Assignments (5)
CHANGE OF NAME Recorded Jul 27, 2023
From: RAYTHEON TECHNOLOGIES CORPORATION
To: RTX CORPORATION
Reel/Frame 064714/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE AND REMOVE PATENT APPLICATION NUMBER 11886281 AND ADD PATENT APPLICATION NUMBER 14846874. TO CORRECT THE RECEIVING PARTY ADDRESS PREVIOUSLY RECORDED AT REEL: 054062 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF ADDRESS. Recorded Mar 4, 2021
From: UNITED TECHNOLOGIES CORPORATION
To: RAYTHEON TECHNOLOGIES CORPORATION
Reel/Frame 055659/0001 →
CHANGE OF NAME Recorded Sep 4, 2020
From: UNITED TECHNOLOGIES CORPORATION
To: RAYTHEON TECHNOLOGIES CORPORATION
Reel/Frame 054062/0001 →
CONFIRMATORY LICENSE Recorded Jun 5, 2006
From: UNITED TECHNOLOGIES CORPORATION
To: NASA
Reel/Frame 017954/0791 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 18, 2005
From: KMETZ, MICHAEL
To: UNITED TECHNOLOGIES CORPORATION
Reel/Frame 017236/0874 →