System and method for removing film from planar substrate peripheries
View Patent ↗A system for removing film from a planar substrate includes a shuttle which transports a film-coated substrate through a film removal station to a rotation station. At the rotation station, the substrate is removed from the shuttle and rotated to a new orientation. After being repositioned on the shuttle, the substrate is transported by the shuttle through a second film removal station.
1. A system for removing a film from a plurality of peripheries of a surface of a substantially planar substrate comprising:
an introduction station;
an exit station;
a shuttle positioned between the introduction station and the exit station, wherein the shuttle is configured to transport the substrate from a first terminal position adjacent to the introduction station to a second terminal position at a distance from the introduction station, the first terminal position and second terminal position defining a transport axis, and wherein the shuttle has a frame configured to hold the substrate, a first shuttle end directed toward the first terminal position, and a second shuttle end directed toward the second terminal position;
a rotation station positioned between the first terminal position and the second terminal position;
a first film removal station proximate to the first terminal position; and
a second film removal station proximate to the second terminal position.
2. The system of claim 1 , wherein the rotation station comprises a support configured to rotate the substrate around an axis perpendicular to the transport axis.
3. The system of claim 2 , wherein the support comprises a suction cup for securing the substrate to the support.
4. The system of claim 2 , wherein the support rotates the substrate 90 degrees.
5. The system of claim 1 , further comprising a housing substantially enclosing the first film removal station, the rotation station, and the second film removal station.
6. The system of claim 5 , wherein the housing has an operating pressure that is lower than the pressure external to the housing.
7. The system of claim 5 , wherein a portion of the housing is transparent.
8. The system of claim 1 , wherein the shuttle comprises a plurality of suction cups configured to maintain the position of the substrate on the frame.
9. The system of claim 1 , wherein the first shuttle end is configured to hold the substrate in a first orientation and the second shuttle end is configured to hold the substrate in a second orientation.
10. The system of claim 1 , wherein the first film removal station comprises a first film removal nozzle.
11. The system of claim 10 , wherein the first film removal nozzle is positioned such that a periphery of a surface of the substrate passes within film removal range of the first film removal nozzle as the shuttle moves along the transport axis passing the rotation station.
12. The system of claim 10 , wherein the second film removal station comprises a second film removal nozzle.
13. The system of claim 12 , wherein the second film removal nozzle is positioned such that a periphery of a surface of the substrate passes within film removal range of the second film removal nozzle as the shuttle moves along the transport axis after passing the rotation station.
14. The system of claim 1 , wherein each film removal station comprises two film removal nozzles positioned such that each of two peripheries of a surface of a planar substrate passes within film removal range of the respective film removal nozzle as the shuttle moves along the transport axis.
15. The system of claim 10 , wherein the film removal nozzle is a sandblasting nozzle.
16. The system of claim 15 , further comprising a blast box enclosing the sandblasting nozzle, wherein the blast box includes a passage through which the nozzle accesses the periphery of the substrate.
17. The system of claim 16 , the blast box further comprising an exhaust port configured to withdraw sandblasting residue from the blast box.
18. The system of claim 1 , wherein each film removal station comprises a buffer wheel configured to be positioned to contact a periphery of the substrate as the shuttle moves along the transport axis.
19. The system of claim 1 , further comprising a guide configured to position the substrate on the first end of the shuttle.
20. A method for removing a film from a plurality of peripheries of a surface of a substantially planar substrate comprising:
introducing the planar substrate to a first region of a shuttle;
transporting the shuttle from a first terminal position toward a second terminal position along a transport axis such that a first periphery of a surface of the substrate passes within film removal range of a first film removal station as the shuttle moves along the transport axis to a rotation station;
rotating the substrate at the rotation station;
transporting the shuttle from the rotation station to the second terminal position such that a second periphery of a surface of the substrate passes within film removal range of a second film removal station as the shuttle moves along the transport axis to the second terminal position; and
removing the substrate from the shuttle.
21. The method of claim 20 , wherein rotating the substrate at the rotation station comprises removing the substrate from the first region of the shuttle, altering the orientation of the substrate relative to the transport axis, moving the shuttle to position a second region of the shuttle to receive the substrate, and positioning the planar substrate in the second region of the shuttle.
22. The method of claim 20 , wherein introducing the planar substrate comprises moving the substrate with an introduction conveyor.
23. The method of claim 20 , wherein removing the substrate comprises moving the substrate with an exit conveyor.
24. The method of claim 20 , wherein the first film removal station comprises a sandblasting nozzle.
25. The method of claim 24 , wherein the second film removal station comprises a sandblasting nozzle.
26. The method of claim 24 , further comprising withdrawing sandblasting residue from the first film removal station.
27. The method of claim 20 , wherein the first film removal station and the second film removal station are enclosed in a controlled atmosphere.
28. The method of claim 27 , further comprising reducing the controlled atmosphere to a pressure lower than pressure external to the controlled atmosphere.
29. The method of claim 20 , further comprising positioning the planar substrate on the shuttle.
30. A system for removing a film from a plurality of peripheries of a surface of a substantially planar substrate comprising:
a housing;
a first film removal zone inside the housing;
a second film removal zone inside the housing adjacent to the first film removal zone;
a rotation zone between the first removal zone and the second removal zone; and
a shuttle configured to transport the substrate through the first film removal zone to the rotation zone and from the rotation zone through the second film removal zone.