Charge compensated nitride phosphors for use in lighting applications
View Patent ↗Disclosed are phosphor compositions having the formulas Ca 1−a−b Ce a Eu b Al 1+a Si 1−a N 3 , where 0<a≦0.2, 0≦b≦0.2; Ca 1−c−d Ce c Eu d Al 1−c (Mg,Zn) c SiN 3 , where 0<c≦0.2, 0≦d≦0.2; Ca 1−2e−f Ce e (Li,Na) e Eu f AlSiN 3 , where 0≦e≦0.2, 0≦f≦0.2, g+h>0; and Ca 1−g−h−i Ce g (Li,Na) h Eu i Al 1+g−h Si 1−g+h N 3 where 0≦g≦0.2, 0<h≦0.4, 0≦i≦0.2,g+i>0. When combined with radiation from a blue or UV light source, these phosphors can provide light sources with good color quality having high CRI over a large color temperature range. Also disclosed are blends of the above phosphors and additional phosphors.
1. A lighting apparatus for emitting white light comprising:
a light source emitting radiation with a peak at from about 250 nm to about 550 nm; and a phosphor material radiationally coupled to the light source, the phosphor material comprising at least one of Ca 1−a−b Ce a Eu b Al 1+a Si 1−a N 3 , where 0<a≦0.2, 0≦b≦0.2; Ca 1−c−d Ce c Eu d Al 1−c (Mg,Zn) c SiN 3 , where 0<c≦0.2, 0≦d≦0.2; Ca 1−2e−f Ce e (Li,Na) e Eu f AlSiN 3 , where 0<e≦0.2, 0≦f≦0.2, e+f>0; or Ca 1−g−h−i Ce g (Li,Na) h Eu j Al 1+g−h Si 1−g+h N 3 where 0≦g≦0.2, 0<h≦0.4, 0≦i≦0.2, g+i>0.
2. The lighting apparatus of claim 1 , wherein the light source is a semiconductor light emitting diode (LED) emitting radiation having a peak wavelength in the range of from about 350 to about 500 nm.
3. The lighting apparatus of claim 2 , wherein the LED comprises a nitride compound semiconductor represented by the formula In i Ga j Al k N, where 0≦i; 0≦j, 0≦K, and i+j+k=1.
4. The lighting apparatus of claim 1 , wherein the light source is an organic emissive structure.
5. The lighting apparatus of claim 1 , wherein the phosphor composition is coated on the surface of the light source.
6. The lighting apparatus of claim 1 , further comprising an encapsulant surrounding the light source and the phosphor composition.
7. The lighting apparatus of claim 1 , wherein the phosphor composition is dispersed in the encapsulant.
8. The lighting apparatus of claim 1 , further comprising a reflector cup.
9. The lighting apparatus of claim 1 , wherein said phosphor composition further comprises one or more additional phosphor.
10. The lighting apparatus of claim 9 , wherein said one or more additional phosphors are selected from the group including: (Ba,Sr,Ca) 5 (PO 4 ) 3 (Cl,F,Br,OH):Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)BPO 5 :Eu 2+ ,Mn 2+ ; (Sr,Ca) 10 (PO 4 ) 6 *νB 2 O 3 :Eu 2+ (wherein 0<ν≦1); Sr 2 Si 3 O 8 *2SrCl 2 :Eu 2+ ; (Ca,Sr,Ba) 3 MgSi 2 O 8 :Eu 2+ ,Mn 2+ ; BaAl 8 O 13 :Eu 2+ ; 2SrO*0.84P 2 O 5 *0.16B 2 O 3 :Eu 2+ ; (Ba,Sr,Ca)MgAl 10 O 17 :Eu 2+ , Mn 2+ ; (Ba,Sr,Ca)Al 2 O 4 :Eu 2+ ; (Y,Gd,Lu,Sc,La)BO 3 :Ce 3+ ,Tb 3+ ; (Ba,Sr,Ca) 2 Si 1−ξ O 4−2ξ :Eu 2+ (wherein 0≦ξ≦0.2); (Ba,Sr,Ca) 2 (Mg,Zn)Si 2 O 7 :Eu 2+ ; (Sr,Ca,Ba)(Al,Ga,In) 2 S 4 :Eu 2+ ; (Y,Gd,Tb,La,Sm,Pr,Lu) 3 (Al,Ga) 5−λ O 12−3/2λ :Ce 3+ (wherein 0≦λ≦0.5); (Lu,Y,SC) 2−ρ (Ca,Mg) 1+ρ Li σ Mg 2−σ (Si,Ge) 3−σ P σ O 12−ρ :Ce 3+ (wherein 0≦ρ≦0.5, 0≦σ0.5); (Ca,Sr) 8 (Mg,Zn)(SiO 4 ) 4 Cl 2 :Eu 2+ , Mn 2+ ; Na 2 Gd 2 B 2 O 7 :Ce 3+ ,Tb 3+ ; (Sr,Ca,Ba,Mg,Zn) 2 P 2 O 7 :Eu 2+ ,Mn 2+ ; (Gd,Y,Lu,La) 2 O 3 :Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La) 2 O 2 S:Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La)VO 4 :Eu 3+ ,Bi 3+ ; (Ca,Sr)S:Eu 2+ ; (Ca,Sr)S:Eu 2+ ,Ce 3+ ; SrY 2 S 4 :Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Ba,Sr,Ca)MgP 2 O 7 :Eu 2+ ,Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3+ ,Mo 6+ ; (Ba,Sr,Ca) β Si γ N μ :Eu 2+ (wherein 2β+4γ=3μ); Ca 3 (SiO 4 )Cl 2 :Eu 2+ ; (Y,Lu,Gd) 2−φ Ca φ Si 4 N 6+φ C 1−φ :Ce 3+ (wherein 0≦φ≦0.5); (Lu,Ca,Li,Mg,Y)α-SiAlON doped with Eu 2+ and/or Ce 3+ ; and 3.5MgO*0.5MgF 2 *GeO 2 :Mn 4+ .
11. The lighting apparatus of claim 1 , wherein the light emitted by said apparatus has a general CRI (Ra) of at least 80.
12. The lighting apparatus of claim 11 , wherein the light emitted by said apparatus has a general CRI (Ra) of at least 90.
13. A phosphor material comprising at least one of Ca 1−a−b Ce a Eu b Al 1+a Si 1−a N 3 , where 0<a≦0.2, 0≦b≦0.2; Ca 1−c−d Ce c Eu d Al 1−c (Mg,Zn) c SiN 3 , where 0<c≦0.2, 0≦d0.2; Ca 1−2e−f Ce e (Li,Na) e Eu f AlSiN 3 , where 0<e≦0.2, 0≦f≦0.2,e+f>0; or Ca 1−g−h−i Ce g (Li,Na) h Eu i Al 1+g−h Si 1−g+h N 3 , where 0≦g≦0.2, 0<h≦0.4, 0≦i≦0.2, g+i>0.
14. A phosphor material according to claim 13 , comprising at least one of (Ca 0.97 Eu 0.01 Ce 0.02 )(Al 0.98 Mg 0.02 )SiN 3 ; (Ca 0.99 Ce 0.01 )(Al 0.99 Mg 0.01 ) SiN 3 ; (Ca 0.95 Eu 0.02 Li 0.03 )Al 0.97 Si 1.03 N 3 ; or (Ca 0.90 Eu 0.02 Li 0.08 )Al 0.92 Si 1.08 N 3 .
15. A phosphor blend including at least one of Ca 1−a−b Ce a Eu b Al 1+a Si 1−a N 3 , where 0<a≦0.2, 0≦b≦0.2; Ca 1−c−d Ce c Eu d Al 1−c (Mg,Zn) c SiN 3 , where 0<c≦0.2, 0≦d≦0.2; Ca 1−2e−f Ce e (Li,Na) e Eu f AlSiN 3 , where 0<e≦0.2, 0≦f≦0.2, e+f<0; or Ca 1−g−h−i Ce g (Li,Na) h Eu i Al 1+g−h Si 1−g+h N 3 , where 0≦g≦0.2, 0<h≦0.4, 0≦i≦0.2, g+i>0; and at least one additional phosphor, wherein the phosphor blend is capable of emitting light suitable for use in general illumination either alone or in combination with radiation emitted by a light source radiationally coupled to the phosphor.
16. The phosphor blend of claim 15 , wherein said one or more additional phosphors are selected from the group including: (Ba,Sr,Ca) 5 (PO 4 ) 3 (Cl,F,Br,OH):Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)BPO 5 :Eu 2+ ,Mn 2+ ; (Sr,Ca) 10 (PO 4 ) 6 *νB 2 O 3 :Eu 2+ (wherein 0<ν≦1); Sr 2 Si 3 O 8 *2SrCl 2 :Eu 2+ ; (Ca,Sr,Ba) 3 MgSi 2 O 8 :Eu 2+ ,Mn 2+ ; BaAl 8 O 13 :Eu 2+ ; 2SrO*0.84P 2 O 5 *0.16B 2 O 3 :Eu 2+ ; (Ba,Sr,Ca)MgAl 10 O 17 :Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)Al 2 O 4 :Eu 2+ ; (Y,Gd,Lu,Sc,La)BO 3 :Ce 3+ ,Tb 3+ ; (Ba,Sr,Ca) 2 Si 1−ξ O 4−2ξ :Eu 2+ (wherein 0≦ξ≦0.2); (Ba,Sr,Ca) 2 (Mg,Zn)Si 2 O 7 :Eu 2+ ; (Sr,Ca,Ba)(Al,Ga,In) 2 S 4 :Eu 2+ ; (Y,Gd,Tb,La,Sm,Pr,Lu) 3 (Al,Ga) 5−λ O 12−3/2λ :Ce 3+ (wherein 0≦λ≦0.5); (Lu,Y,SC) 2−ρ (Ca,Mg) 1+ρ Li σ Mg 2−σ (Si,Ge) 3−σ P σ O 12−ρ :Ce 3+ (wherein 0≦ρ≦0.5, 0≦σ≦0.5); (Ca,Sr) 8 (Mg,Zn)(SiO 4 ) 4 Cl 2 :Eu 2+ , Mn 2+ ; Na 2 Gd 2 B 2 O 7 :Ce 3+ ,Tb 3+ ; (Sr,Ca,Ba,Mg,Zn) 2 P 2 O 7 :Eu 2+ , Mn 2+ ; (Gd,Y,Lu,La) 2 O 3 :Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La) 2 O 2 S:Eu 3+ , Bi 3+ ; (Gd,Y,Lu,La)VO 4 :Eu 3+ , Bi 3+ ; (Ca,Sr)S:Eu 2+ ; (Ca,Sr)S:Eu 2+ , Ce 3+ ; SrY 2 S 4 :Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Ba,Sr,Ca)MgP 2 O 7 :Eu 2+ , Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3+ ,Mo 6+ ; (Ba,Sr,Ca) β Si γ N μ :Eu 2+ (wherein 2β+4γ=3μ); Ca 3 (SiO 4 )Cl 2 :Eu 2+ ; (Y,Lu,Gd) 2−φ Ca φ Si 4 N 6+φ C 1−φ :Ce 3+ (wherein 0≦φ≦0.5); (Lu,Ca,Li,Mg,Y)α-SiAlON doped with Eu 2+ and/or Ce 3+ ; and 3.5MgO*0.5MgF2*GeO2:Mn 4+ .
17. The phosphor blend of claim 15 , wherein the light emitted by the blend alone or in combination with radiation emitted by a light source radiationally coupled to the phosphor is white.
18. The phosphor blend of claim 17 , wherein the light emitted by the blend alone or in combination with radiation emitted by a light source radiationally coupled to the phosphor has a general CRI (Ra) of at least 80.
19. The phosphor blend of claim 18 , wherein the light emitted by the blend alone or in combination with radiation emitted by a light source radiationally coupled to the phosphor has a general CRI (Ra) of at least 90.