Granted Patent B2

US 7,442,326 · App. 11/285,685 · Granted Oct 28, 2008

Abstract

Claims (48)

1. A lighting apparatus for emitting light comprising:

a light source emitting radiation having a peak emission from about 200 nm to about 500 nm; and

a phosphor material radiationally coupled to the light source, the phosphor material comprising L l M m A a G g P p Q q N n Z z :Ce 3+ , where L is at least one of Li, Na, K, Rb, and/or Cs; M is at least one of Be, Mg, Ca, Sr, Ba, Mn, Sn, Pb, and/or Zn; A is at least one of Bi, Sb, In, Sc, Y, and/or any of the rare earth elements; G is Si and/or Ge; Q is at least one of O, S, and/or Se; Z is at least one of F, Cl, Br, and/or I; and wherein 0≦l≦1, 2.5≦m≦5, 1.5≦a≦2.5, 2≦g≦2.5, 0≦p≦1, 0≦n≦1, 0≦z≦1, and l+2m+3a+4g+5p=2q+3n+z.

2. The lighting apparatus according to claim 1 , wherein the light source is an LED.

3. The lighting apparatus according to claim 2 , wherein the LED comprises a nitride compound semiconductor represented by the formula In i Ga j Al k N, where 0≦i; 0≦j, 0≦k, and i+j+k=1.

4. The lighting apparatus according to claim 1 , wherein the amount of Ce 3+ doping is from 0.0001 to 10 mole percent.

5. The lighting apparatus according to claim 1 , wherein the light source is an organic emissive structure.

6. The lighting apparatus according to claim 1 , wherein the phosphor material is coated on a surface of the light source.

7. The lighting apparatus according to claim 1 , further comprising an encapsulant surrounding the light source and the phosphor material.

8. The lighting apparatus according to claim 1 , wherein the phosphor material is dispersed in the encapsulant.

9. The lighting apparatus according to claim 1 , further comprising a reflector cup.

10. The lighting apparatus according to claim 1 , wherein the lighting apparatus comprises a discharge lamp and wherein said phosphor material is coated on a surface of a glass envelope.

11. The lighting apparatus according to claim 1 , wherein said phosphor material further comprises one or more additional phosphors.

12. The lighting apparatus according to claim 11 , wherein said one or more additional phosphors are selected from the group including:

(Ba,Sr,Ca) 5 (PO 4 ) 3 (Cl,F,Br,OH):Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)BPO 5 :Eu 2+ ,Mn 2+ ;

(Sr,Ca) 10 (PO 4 ) 6 *νB 2 O 3 :Eu 2+ (wherein 0<ν≦1); Sr 2 Si 3 O 8 *2SrCl 2 :Eu 2+ ;

(Ca,Sr,Ba) 3 MgSi 2 O 8 :Eu 2+ ,Mn 2+ ; BaAl 8 O 13 :Eu 2+ ; 2SrO*0.84P 2 O 5 *0.16B 2 O 3 :Eu 2+ ;

(Ba,Sr,Ca)MgAl 10 O 17 :Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)Al 2 O 4 :Eu 2+ ;

(Y,Gd,Lu,Sc,La)BO 3 :Ce 3+ ,Tb 3+ ; (Ba,Sr,Ca) 2 Si 1−ξ O 4−2ξ :Eu 2+ (wherein 0≦ξ≦0.2);

(Ba,Sr,Ca) 2 (Mg,Zn)Si 2 O 7 :Eu 2+ ; (Sr,Ca,Ba)(Al,Ga,In) 2 S 4 :Eu 2+ ;

(Y,Gd,Tb,La,Sm,Pr,Lu) 3 (Al,Ga) 5−α O 12−3/2α :Ce 3+ (wherein 0≦α≦0.5);

(Ca,Sr) 8 (Mg,Zn)(SiO 4 ) 4 Cl 2 :Eu 2+ , Mn 2+ ; Na 2 Gd 2 B 2 O 7 :Ce 3+ ,Tb 3+ ;

(Sr,Ca,Ba,Mg,Zn) 2 P 2 O 7 :Eu 2+ ,Mn 2+ ; (Gd,Y,Lu,La) 2 O 3 :Eu 3+ ,Bi 3+ ;

(Gd,Y,Lu,La) 2 O 2 S:Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La)VO 4 :Eu 3+ ,Bi 3+ ; (Ca,Sr)S:Eu 2+ ,Ce 3+ ;

SrY 2 S 4 :Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Ba,Sr,Ca)MgP 2 O 7 :Eu 2+ ,Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3+ ,Mo 6+ ;

(Ba,Sr,Ca) β Si γ N μ :Eu 2+ (wherein 2β+4γ=3μ); Ca 3 (SiO 4 )Cl 2 :Eu 2+ ; (Y,Lu,Gd) 2−φ Ca φ Si 4 N 6+φ C 1−φ :Ce 3+ , (wherein 0≦φ≦0.5); (Lu,Ca,Li,Mg,Y)alpha-SiAlON doped with Eu 2+ and/or Ce 3+ ; 3.5MgO*0.5MgF 2 *GeO 2 :Mn 4+ ; Ca 1−c−f Ce c Eu f Al 1+c Si 1−c N 3 , (where 0≦c≦0.2, 0≦f≦0.2); Ca 1−h−r Ce h Eu r Al 1−h (Mg,Zn) h SiN 3 , (where 0<h≦0.2, 0≦r≦0.2); Ca 1−2s−t Ce s (Li,Na) s Eu t AlSiN 3 , (where 0≦s≦0.2, 0≦f≦0.2, s+t>0); and Ca 1−σ−χ−i Ce σ (Li,Na) χ Eu φ Al 1+σ−χ Si 1−σ+χ N 3 , (where 0≦σ≦0.2, 0≦χ≦0.4, 0≦φ≦0.2).

13. The lighting apparatus according to claim 11 , wherein said phosphor material is capable of absorbing the radiation emitted by a light source having a peak emission from 200-500 nm and emitting radiation that, when combined with said radiation from said light source, produces white light.

14. The lighting apparatus according to claim 13 , wherein said apparatus has a color temperature of <4500 K.

15. The lighting apparatus according to claim 13 , wherein said apparatus has a general CRI (R a ) of 90 or greater.

16. The lighting apparatus of claim 1 , wherein said phosphor material comprises (Lu,Sc,Y,Tb) 2−d−e Ce e Ca 1+d Mg 2 Si 3 O 12−d/2 where −0.5≦d≦1 and 0<e≦0.1.

17. A phosphor blend comprising a first phosphor composition comprising L l M m A a G g P p Q q N n Z z :Ce 3+ , where L is at least one of Li, Na, K, Rb, and/or Cs; M is at least one of Be, Mg, Ca, Sr, Ba, Mn, Sn, Pb, and/or Zn; A is at least one of Bi, Sb, In, Sc, Y, and/or any of the rare earth elements; G is Si and/or Ge; Q is at least one of O, S, and/or Se; Z is at least one of F, Cl, Br, and/or I; and wherein 0≦l≦1, 2.5≦m≦5, 1.5≦a≦2.5, 2≦g≦2.5, 0≦p≦1, 0≦n≦1, 0≦z≦1, and l+2m+3a+4g+5p=2q+3n+z; and at least one additional phosphor composition.

18. The phosphor blend according to claim 17 , wherein said phosphor blend comprises one or more of the group including:

(Ba,Sr,Ca) 5 (PO 4 ) 3 (Cl,F,Br,OH):Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)BPO 5 :Eu 2+ ,Mn 2+ ;

(Sr,Ca) 10 (PO 4 ) 6 *νB 2 O 3 :Eu 2+ (wherein 0<ν≦1); Sr 2 Si 3 O 8 *2SrCl 2 :Eu 2+ ;

(Ca,Sr,Ba) 3 MgSi 2 O 8 :Eu 2+ ,Mn 2+ ; BaAl 8 O 13 :Eu 2+ ; 2SrO*0.84P 2 O 5 *0.16B 2 O 3 :Eu 2+ ;

(Ba,Sr,Ca)MgAl 10 O 17 :Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)Al 2 O 4 :Eu 2+ ;

(Y,Gd,Lu,Sc,La)BO 3 :Ce 3+ ,Tb 3+ ; (Ba,Sr,Ca) 2 Si 1−ξ O 4−2ξ :Eu 2+ (wherein 0≦ξ≦0.2);

(Ba,Sr,Ca) 2 (Mg,Zn)Si 2 O 7 :Eu 2+ ; (Sr,Ca,Ba)(Al,Ga,In) 2 S 4 :Eu 2+ ;

(Y,Gd,Tb,La,Sm,Pr,Lu) 3 (Al,Ga) 5−α O 12−3/2α :Ce 3+ (wherein 0≦α≦0.5);

(Ca,Sr) 8 (Mg,Zn)(SiO 4 ) 4 Cl 2 :Eu 2+ ,Mn 2+ ; Na 2 Gd 2 B 2 O 7 :Ce 3+ ,Tb 3+ ;

(Sr,Ca,Ba,Mg,Zn) 2 P 2 O 7 :Eu 2+ ,Mn 2+ ; (Gd,Y,Lu,La) 2 O 3 :Eu 3+ ,Bi 3+ ;

(Gd,Y,Lu,La) 2 O 2 S:Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La)VO 4 :Eu 3+ ,Bi 3+ ; (Ca,Sr)S:Eu 2+ ,Ce 3+ ;

SrY 2 S 4 :Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Ba,Sr,Ca)MgP 2 O 7 :Eu 2+ ,Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3+ ,Mo 6+ ;

(Ba,Sr,Ca) β Si γ N μ :Eu 2+ (wherein 2β+4γ=3μ); Ca 3 (SiO 4 )Cl 2 :Eu 2+ ; (Y,Lu,Gd) 2−φ Ca φ Si 4 N 6+φ C 1−φ :Ce 3+ , (wherein 0≦φ≦0.5); (Lu,Ca,Li,Mg,Y)alpha-Si doped with Eu 2+ and/or Ce 3+ ; 3.5MgO*0.5MgF 2 *GeO 2 :Mn 4+ ; Ca 1−c−f Ce c Eu f Al 1+c Si 1−c N 3 , (where 0<c≦0.2, 0≦f≦0.2); Ca 1−h−r Ce h Eu r Al 1−h (Mg,Zn) h SiN 3 , (where 0<h≦0.2, 0≦r≦0.2); Ca 1−2s−t Ce s (Li,Na) s Eu t AlSiN 3 , (where 0≦s≦0.2, 0≦f≦0.2, s+t>0); and Ca 1−σ−χ−i Ce σ (Li,Na) χ Eu φ Al 1+σ−χ Si 1−σ+χ N 3 , (where 0≦σ≦0.2, 0≦χ≦0.4, 0≦φ≦0.2).

19. A phosphor material comprising L l M m A a G g P p Q q N n Z z :Ce 3+ , where L is at least one of Li, Na, K, Rb, and/or Cs; M is at least one of Be, Mg, Ca, Sr, Ba, Mn, Sn, Pb, and/or Zn; A is at least one of Bi, Sb, In, Y, and/or any of the rare earth elements; G is Si and/or Ge; Q is at least one of O, S, and/or Se; Z is at least one of F, Cl, Br, and/or I; and wherein 0≦l≦1, 2.5≦m≦5, 1.5≦a≦2.5, 2≦g≦2.5, 0≦p≦1, 0≦n≦1, 0≦z≦1, and l+2m+3a+4g+5p=2q+3n+z and the amount of Ce 3+ doping is from 0.0001 to 10 mole percent.

20. The phosphor material of claim 19 , wherein said phosphor material comprises (Lu,Sc,Y,Tb) 2−d−e Ce e Ca 1+d Mg 2 Si 3 O 12−e/2 where −0.5≦d≦1 and 0<e≦0.1.

21. A phosphor material comprising L l M m A a G g P p Q q N n Z z Ce 3+ , where L is at least one of Li, Na, K, Rb, and/or Cs; M is at least one of Be, Mg, Ca, Sr, Ba, Mn, Sn, Pb, and/or Zn; A is at least one of Bi, Sb, In, Sc, Y, and/or any of the rare earth elements; G is Si; Q is at least one of O, S, and/or Se; Z is at least one of F, Cl, Br, and/or I; and wherein 0≦l≦1, 2.5≦m≦5, 1.5≦a≦2.5, 2≦g≦2.5, 0≦p≦1, 0≦n≦1, 0≦z≦1, and l+2m+3a+4g+5p=2q+3n+z and the amount of Ce 3+ doping is from 0.0001 to 10 mole percent.

22. A phosphor material comprising L l M m A a G g P p Q q N n Z z Ce 3+ , where L is at least one of Li, Na, K, Rb, and/or Cs; M is at least one of Be, Mg, Ca, Sr, Ba, Mn, Sn, Pb, and/or Zn; A is at least one of Bi, Sb, In, Y, and/or any of the rare earth elements; G is Si; Q is at least one of O, S, and/or Se; Z is at least one of F, Cl, Br, and/or I; and wherein 0≦l≦1, 2.5≦m≦5, 1.5≦a≦2.5, 2≦g≦2.5, 0≦p≦1, 0≦n≦1, 0≦z≦1, and l+2m+3a+4g+5p=2q+3n+z and the amount of Ce 3+ doping is from 0.0001 to 10 mole percent.

Assignments (7)