Flat panel display

1. A flat panel display, comprising:

a pixel electrode disposed above a substrate;

an organic layer including an emission layer disposed on the pixel electrode;

an opposite electrode disposed on the organic layer;

a phase shift layer disposed on the opposite electrode; and

a reflecting layer to reflect external incident light, the reflecting layer being disposed on the phase shift layer.

2. The flat panel display of claim 1 ,

further comprising at least one thin film transistor disposed between the substrate and the pixel electrode.

3. The flat panel display of claim 1 ,

wherein the pixel electrode is a reflecting electrode.

4. The flat panel display of claim 1 ,

wherein the organic layer further includes at least one additional layer selected from the group of a hole injection layer, a hole transport layer, a hole blocking layer, an electron transport layer, and an electron injection layer.

5. The flat panel display of claim 1 ,

wherein the opposite electrode is formed of a material with a transmittance of about 10% to about 40%.

6. The flat panel display of claim 1 ,

wherein the opposite electrode is formed of a material selected from the group of Mg, MgAg, Ca, CaAg, Ag, AlCa, AlAg, LiMg, and Li.

7. The flat panel display of claim 1 ,

wherein the opposite electrode is about 150 Å to about 250 Å thick.

8. The flat panel display of claim 7 ,

wherein the opposite electrode is about 180 Å thick.

9. The flat panel display of claim 1 ,

wherein the phase shift layer is about 400 Å to about 1300 Å thick.

10. The flat panel display of claim 9 ,

wherein the phase shift layer is about 500 Å to about 800 Å thick.

11. The flat panel display of claim 1 ,

wherein the phase shift layer is a transparent layer.

12. The flat panel display of claim 11 ,

wherein the transparent layer is an organic layer, an inorganic layer, or a stacked structure of an organic layer and an inorganic layer.

13. The flat panel display of claim 12 ,

wherein the inorganic layer is formed of a material selected from the group of silicon nitride (SiN x ), silicon oxide (SiO 2 ), silicon oxynitride (SiON), and a transparent conductive oxide (TCO).

14. The flat panel display of claim 1 ,

wherein the reflecting layer is formed of a material that has a transmittance of about 40% to about 60%.

15. The flat panel display of claim 1 ,

wherein the reflecting layer is a semi-transparent metal layer.

16. The flat panel display of claim 15 ,

wherein the semi-transparent metal layer is formed of a material selected from the group of Mg, Ag, MgAg, Cr, Pt, and Au.

17. The flat panel display of claim 1 ,

wherein the reflecting layer is about 80 Å to about 120 Å thick.

18. The flat panel display of claim 1 ,

wherein the phase shift layer is directly on the opposite electrode.

19. The flat panel display of claim 18 ,

wherein the reflecting layer is directly on the phase shift layer.

20. The flat panel display of claim 1 ,

wherein the flat panel display does not comprise a polarizer.