Semiconductor pressure sensor
View Patent ↗A semiconductor pressure sensor can reduce the damage of bonding wires to increase their life time even under an environment in which the temperature and pressure change rapidly and radically. The semiconductor pressure sensor includes a package ( 1 ) made of a resin and having a concave portion ( 1 a ), a lead ( 2 ) formed integral with the package ( 1 ) by insert molding, with its one end exposed into the concave portion ( 1 a ) and its other end extended from the package ( 1 ) to the outside, a sensor chip ( 3 ) arranged in the concave portion ( 1 a ) for detecting pressure, and a bonding wire ( 4 ) electrically connecting the sensor chip ( 3 ) and the lead ( 2 ) with each other. An interface between the lead ( 2 ) and the package ( 1 ) on the side of the concave portion ( 1 a ) is covered with a first protective resin portion ( 6 ) of electrically insulating property, and the bonding wire ( 4 ) is covered with a second protective resin portion ( 7 ) that is softer than the first protective resin portion ( 6 ).
1. A semiconductor pressure sensor comprising:
a package made of a resin and having a concave portion;
a lead formed integral with said package by insert molding, with its one end exposed into said concave portion and its other end extended from said package to the outside;
a semiconductor chip arranged in said concave portion; and
a bonding wire electrically connecting said semiconductor chip and said lead with each other;
wherein an interface between said lead and said package on the side of said concave portion is covered with a first protective resin portion of electrically insulating property; and
said bonding wire is covered with a second protective resin portion that is softer than said first protective resin portion, such that said first protective resin does not cover any portion of said bonding wire.
2. The semiconductor pressure sensor as set forth in claim 1 , wherein said semiconductor chip is bonded to a bottom of said concave portion through said first protective resin portion.
3. The semiconductor pressure sensor as set forth in claim 1 , wherein said lead is provided at its one end with a bonding pad that is formed by being bent in its intermediate portion toward said second protective resin portion in a stepwise fashion.
4. The semiconductor pressure sensor as set forth in claim 1 , wherein said semiconductor chip is a sensor chip for detecting pressure.
5. The semiconductor pressure sensor as set forth in claim 1 , wherein said semiconductor chip is a processor chip that serves to correct and amplify an electric signal from a sensor chip for detecting pressure.
6. The semiconductor pressure sensor as set forth in claim 5 , wherein said sensor chip and said processing chip are arranged in said same concave portion.