IP Library Granted Patent US 7,561,384
Granted Patent B2
US 7,561,384 · App. 11/289,798 · Granted Jul 14, 2009

Magneto-resistive sensor having small track width and sensor height using stopper layer

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Quick Facts
Patent No.
US 7,561,384
App. No.
11/289,798
Granted
Jul 14, 2009
Kind
B2
Abstract

A high output magneto-resistive sensor is provided by suppressing leftover resist mask after lift-off and generation of a fence, and by making it easy to remove the redepositions deposited on the side wall in the track width direction or on the side wall in the sensor height direction of the magnetoresistive film. As a means to solve a fence and lift-off leftover of a resist in a process for forming a track and a process for forming a sensor height, a stopper layer is provided on the magnetoresistive film and the stopper layer on the refill film, and performing lift-off by CMP. By using a metallic material which has a small CMP polishing rate for at least the first stopper layer, the magnetoresistive film and the first stopper layer can be etched simultaneously and a pattern formed. As a result, decrease of the height of the resist mask by RIE can be suppressed and lift-off leftover can be prevented.

Claims (14)

1. A magneto-resistive sensor which has a pair of magnetic shield layers consisting of a lower shield layer and an upper shield layer and a magnetoresistive film having a laminated structure placed between said pair of magnetic shield layers, and carries a signal current through a laminated plane of said magnetoresistive film, said magneto-sensitive sensor comprising:

a first stopper layer made of a metallic layer on said magnetoresistive film;

wherein a length of said first stopper layer in a sensor height direction is longer than a length of said magnetoresistive film in the sensor height direction.

2. A magneto-resistive sensor according to claim 1 , wherein

said first stopper layer is composed of a metallic material having a Vickers hardness of about 80 Hv or more.

3. A magneto-resistive sensor according to claim 1 , wherein

said first stopper layer is composed of a metallic material selected from a group of Co, Cr, Mo, Hf, Ir, Nb, Re, Rh, Ru, and W or an alloy including any in the group.

4. A magneto-resistive sensor which has a pair of magnetic shield layers consisting of a lower shield layer and an upper shield layer, and a magnetoresistive film having a laminated structure placed between said pair of magnetic shield layers, and carries a signal current through a laminated plane of said magnetoresistive film, said magneto-resistive sensor comprising,

a first stopper layer made of a metallic layer on said magnetoresistive film;

wherein a length of said first stopper layer in a track width direction is longer than a length of said magnetoresistive film in a track width direction.

5. A magneto-resistive sensor according to claim 4 , wherein

said first stopper layer is composed of a metallic material having a Vickers hardness of about 80 Hv or more.

6. A magneto-resistive sensor according to claim 4 , wherein

said first stopper layer is composed of a metallic material selected from a group of Co, Cr, Mo, Hf, Ir, Nb, Re, Rh, Ru, and W or an alloy including any in the group.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040819/0450 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →